2SK1412LS
No.4228-1/4
Specifications
Absolute Maximum Ratings
at Ta=25
C
Parameter
Symbol
Conditions
Ratings
Unit
Drain-to-Source Voltage
VDSS
1500
V
Gate-to-Source Voltage
VGSS
20
V
Drain Current (DC)
ID
0.1
A
Drain Current (Pulse)
IDP
PW
10
s, duty cycle
1%
0.2
A
Allowable Power Dissipation
PD
2.0
W
Tc=25
C
20
W
Channel Temperature
Tch
150
C
Storage Temperature
Tstg
--55 to +150
C
Electrical Characteristics
at Ta=25
C
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Drain-to-Source Breakdown Voltage
V(BR)DSS
ID=1mA, VGS=0
1500
V
Zero-Gate Voltage Drain Current
IDSS
VDS=1200V, VGS=0
100
A
Gate-to-Source Leakage Current
IGSS
VGS=
20V, VDS=0
100
nA
(Note) Be careful in handling the 2SK1412LS because it has no protection diode between gate and source.
Continued on next page.
Marking : K1412
Features
Low ON-resistance, low input capacitance.
Ultrahigh-speed switching.
High reliability (Adoption of HVP process).
Micaless package facilitating mounting.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : ENN4228B
2SK1412LS
Package Dimensions
unit : mm
2078C
[2SK1412LS]
N1501 TS IM TA-3431 / 51099 TH (KT) / 41293 TH (KOTO) AX-9637
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
N-Channel Silicon MOSFET
Ultrahigh-Speed Switching Applications
1 : Gate
2 : Drain
3 : Source
SANYO : TO-220FI(LS)
16.0
14.0
3.6
3.5
7.2
16.1
0.7
2.55
2.55
2.4
1.2
0.9
0.75
0.6
1.2
4.5
2.8
1 2 3
10.0
3.2
2SK1412LS
No.4228-2/4
Continued from preceding page.
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Cutoff Voltage
VGS(off)
VDS=10V, ID=1mA
1.5
3.5
V
Forward Transfer Admittance
yfs
VDS=20V, ID=50mA
50
100
mS
Static Drain-to-Source On-State Resistance
RDS(on)
ID=50mA, VGS=10V
140
200
Input Capacitance
Ciss
VDS=20V, f=1MHz
40
pF
Output Capacitance
Coss
VDS=20V, f=1MHz
12
pF
Reverse Transfer Capacitance
Crss
VDS=20V, f=1MHz
3.0
pF
Turn-ON Delay Time
td(on)
See specified Test Circuit.
15
ns
Rise Time
tr
See specified Test Circuit.
25
ns
Turn-OFF Delay Time
td(off)
See specified Test Circuit.
50
ns
Fall Time
tf
See specified Test Circuit.
350
ns
Diode Forward Voltage
VSD
IS=0.1A, VGS=0
1.0
1.5
V
Switching Time Test Circuit
0
10
20
30
40
50
0
40
80
160
120
200
Drain-to-Source Voltage, VDS -- V
ID -- VDS
Drain Current, I
D
-
-
mA
ITR01044
0
2
4
6
14
12
8
10
0
120
140
80
100
40
20
60
200
160
180
Gate-to-Source Voltage, VGS -- V
ID -- VGS
Drain Current, I
D
-
-
mA
ITR01046
ITR01047
VDS=20V
25
C
75
C
Tc= --25
C
--40
--20
0
20
40
60
80
100
120
140
Case Temperature, Tc --
C
ID -- Tc
Drain Current, I
D
-
-
mA
4.0V
4.5V
5.0V
3.5V
3.0V
V GS
=5.5V
0
4
8
12
16
20
0
20
40
80
60
100
Drain-to-Source Voltage, VDS -- V
ID -- VDS
Drain Current, I
D
-
-
mA
ITR01045
4.0V
4.5V
3.5V
3.0V
V GS
=5.0V
VGS=10V
0
120
140
80
100
40
20
60
200
160
180
V
DS
=20V
10V
PW=10
s
D.C.
1%
P.G
RGS
50
ID=50mA
RL=400
VDD=200V
VOUT
2SK1412LS
VIN
D
G
S
10V
0V
VIN
2SK1412LS
No.4228-3/4
VGS=10V
VDD=200V
P.W.=2
s
D.C.
0.5%
td(off)
tf
tr
td(on)
10
3
2
5
7 100
2
3
5
7 1000
2
3
1.0
10
100
5
7
3
2
5
7
3
2
5
3
2
Drain-to-Source Voltage, VDS -- V
A S O
Drain Current, I
D
-
-
mA
ITR01053
Tc=25
C
Single pulse
100
s
1ms
10ms
100ms
DC operation
Operation in this area
is limited by RDS(on).
0
4
8
20
16
12
24
28
32
Drain-to-Source Voltage, VDS -- V
ITR01052
Ciss, Coss, Crss -- VDS
5
1.0
100
2
10
5
7
3
2
5
7
7
3
2
Ciss, Coss, Crss -
-
pF
0
20
40
60
80
100
120
140
160
Ambient Temperature, Ta --
C
ITR01054
PD -- Ta
0
1.2
0.8
0.4
1.6
2.0
2.4
Allo
w
able Po
wer Dissipation, P
D
--
W
0
20
40
60
80
100
120
140
160
Case Temperature, Tc --
C
ITR01055
PD -- Tc
0
12
8
4
16
20
24
Allo
w
able Po
wer Dissipation, P
D
--
W
ITR01049
16
8
10
6
2
12
14
0
4
200
40
160
80
120
240
280
320
Gate-to-Source Voltage, VGS -- V
RDS(on) -- VGS
ID=50mA
Tc=25
C
Ciss
Coss
Crss
No heat sink
f=1MHz
5
7
10
2
5
3
7
100
2
5
3
Drain Current, ID -- mA
ITR01051
SW Time -- ID
5
7
7
5
3
2
10
1000
7
5
3
2
100
2
Switching
T
ime, SW
T
ime -
-
ns
--40
--20
80
100
120
0
40
20
60
140
0
40
200
160
120
80
280
320
240
Case Temperature, Tc --
C
RDS(on) -- Tc
ITR01050
--2
5
C
25
C
Tc=75
C
10
7
2
3
3
5
100
7
2
5
5
7
5
100
3
7
2
10
3
2
5
Drain Current, ID -- mA
y
fs
-- ID
F
orw
ard T
ransfer
Admittance,
y
fs
-
-
mS
ITR01048
VDS=20V
VGS=10V
ID=50mA
IDP=200mA
10
s
ID=100mA
Static Drain-to-Source
On-State Resistance, R
DS
(on)
--
Static Drain-to-Source
On-State Resistance, R
DS
(on)
--
2SK1412LS
No.4228-4/4
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be expor ted without obtaining the expor t license from the author ities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of November, 2001. Specifications and information herein are subject
to change without notice.
PS
PDF 
ZIP