2SK2348
Ordering number : EN5415A
High-Voltage, High-Speed
Switching Applications
N-Channel Silicon MOSFET
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN
72597TS (KOTO) TA-1033 No.5415-1/4
Package Dimensions
unit: mm
2131-TO-3JML
[2SK2348]
SANYO: TO-3JML
1 : Gate
2 : Drain
3 : Source
Specifications
Absolute Maximum Ratings
at Ta=25C
Parameter
Symbol
Conditions
Ratings
Unit
Drain-to-Source Voltage
VDSS
1200
V
Gate-to-Source Voltage
VGSS
30
V
Drain Current (DC)
ID
14
A
Drain Current (pulse)
IDP
PW
10s, duty cycle
1%
28
A
Allowable Power Dissipation
PD
4.6
W
Tc=25C
160
W
Channel Temperature
Tch
150
C
Storage temperature
Tstg
55 to +150
C
Electrical Characteristics
at Ta=25C
Parameter
Symbol
Conditions
Ratings
min
typ
max
Unit
D-S Breakdown Voltage
V(BR)DSS
ID=1mA, VGS=0
1200
V
Zero-Gate Voltage Drain Current IDSS
VDS=1200V, VGS=0
1.0
mA
Gate-to Source Leak Current
IGSS
VGS=30V, VDS=0
100
nA
Cutoff Voltage
VGS(off)
VDS=10V, ID=1mA
1.5
3.5
V
Forward Transfer Admittance
|yfs|
VDS=20V, ID=7A
3.0
6.0
S
Static Drain-to-Source
RDS(on)
ID=7A, VGS=10V
1.0
1.5
ON-State Resistance
Input Capacitance
Ciss
VDS=20V, f=1MHz
3000
pF
Output Capacitance
Coss
VDS=20V, f=1MHz
500
pF
Reverse Transfer Capacitance
Crss
VDS=20V, f=1MHz
250
pF
Continued on next page.
Features
Low ON resistance, ultrahigh-speed switching.
High reliability (Adoption of HVP process).
Continued from preceding page.
Parameter
Symbol
Conditions
Ratings
min
typ
max
Unit
Turn-ON Delay Time
td(on)
45
ns
Rise Time
tr
ID=7A, VGS=10V,
180
ns
Turn-OFF Delay Time
td(off)
VDD=200V, RGS=50
850
ns
Fall Time
tf
230
ns
Diode Forward Voltage
VSD
IS=14A, VGS=0
1.5
V
Reverse Recovery Time
trr
IS=14A, di/dt=100A/s
0.75
1.5
s
Switching Time Test Circuit
2SK2348
No.5415-2/4
D
r
a
i
n
C
u
r
r
e
n
t
,
I
D
A
D
r
a
i
n
C
u
r
r
e
n
t
,
I
D
A
D
r
a
i
n
C
u
r
r
e
n
t
,
I
D
A
D
r
a
i
n
C
u
r
r
e
n
t
,
I
D
A
Drain-to-Source Voltage, V
DS
V
Drain-to-Source Voltage, V
DS
V
Gate-to-Source Voltage, V
GS
V
I
D
- V
DS
I
D
- V
GS
I
D
- Tc
6
8
14
-80
-40
0
40
80
120
160
10
12
4
2
0
0
5
15
10
20
25
0
5
10
15
20
25
I
D
- V
DS
0
4
8
12
16
20
0
2
8
10
6
4
0
8
12
16
20
4
0
10
20
30
50
40
V
G
S
=1
0V
V
G
S
=
10
V
6V
5V
3.5V
4V
4.5V
3V
3V
4V
5V
6V
V
G S
= 10V
V
D S
=20
V
10V
25
C
75
C
V
DS
= 20V
Tc=-25
C
Case Temperature, Tc
C
2SK2348
No.5415-3/4
Drain Current, I
D
A
Gate-to-Source Voltage, V
GS
V
V
GS(off)
- Tc
-80
-40
0
40
80
120
160
-80
-40
0
40
80
120
160
1000
0.1
2
2
3
3
5
5
7
2
3
2
3
5
7
7
2
3
2
3
5
7
1.0
10
100
0.8
1.2
1.6
0.4
0
2.8
2.0
2.4
7
6
0
4
2
12
10
8
14
C
u
t
o
f
f
V
o
l
t
a
g
e
,
V
G
S
(
o
f
f
)
V
0
0.4
0.8
1.2
2.0
1.6
3.2
2.8
2.4
4.0
3.6
0.8
0.6
1.0
1.4
1.2
1.8
1.6
2.0
Case Temperature, Tc
C
Case Temperature, Tc
C
V
D S
=1
0V
20
V
V
DD
= 200V
V
GS
= 10V
P.W. = 1
s
D.C.
0.5%
V
DS
= 10V
I
D
= 1mA
I
D
=7A
Tc = 25
C
I
D
=7A
S
w
i
t
c
h
i
n
g
T
i
m
e
,
S
W
T
i
m
e
n
s
t r
t f
t d(off)
t d(on)
SW Time - I
D
R
DS(on)
- V
GS
R
DS(on)
- Tc
S
t
a
t
i
c
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
O
N
-
S
t
a
t
e
R
e
s
i
s
t
a
n
c
e
,
R
D
S
(
o
n
)
S
t
a
t
i
c
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
O
N
-
S
t
a
t
e
R
e
s
i
s
t
a
n
c
e
,
R
D
S
(
o
n
)
,,,,,,,,
,,,,,,,,
,,,,,,,,
,,,,,,,,
,,,,,,,,
,,,,,,,,
Drain Current, I
D
A
Drain-to-Source Voltage, V
DS
V
Drain-to-Source Voltage, V
DS
V
12
16
20
32
24
28
8
4
0
7
5
3
2
7
5
3
2
2
0.1
10
100
1000
1.0
10
2
3
5
7
5
7
2
3
5
7
2
3
5
1.0
10
2
3
5
7
2
3
2
3
5
7
1000
100
10000
2
3
5
7
2
3
2
5
7
1.0
10
2
3
5
7
2
3
2
3
5
7
V
D
S
=
1
0
V
2
0
V
25
C
Tc = 25
C
Tc=
25
C
Ciss,Coss,Crss - V
DS
C
i
s
s
,
C
o
s
s
,
C
r
s
s
p
F
Ciss
Crss
Coss
F
o
r
w
a
r
d
T
r
a
n
s
f
e
r
A
d
m
i
t
t
a
n
c
e
,
|
y
f
s
|
S
Drain Current, I
D
A
F
o
r
w
a
r
d
T
r
a
n
s
f
e
r
A
d
m
i
t
t
a
n
c
e
,
|
y
f
s
|
S
| y
f s
| - I
D
| y
f s
| - I
D
7
7
5
3
2
7
5
3
2
3
2
0.1
1.0
1.0
10
7
7
5
3
2
7
5
3
2
3
2
0.1
10
D
r
a
i
n
C
u
r
r
e
n
t
,
I
D
A
A S O
100
s
10
s
I
DP
Operation in this area
is limited by R
DS
(on).
DC
op
era
tio
n
V
D S
= 20V
V
G S
= 10V
V
G S
= 0
f = 1MHz
100
ms
10m
s
1m
I
D
75
C
Tc = 25
C
Single pulse
2SK2348
No.5415-4/4
No products described or contained herein are intended for use in surgical implants, life-support systems,
aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and
the like, the failure of which may directly or indirectly cause injury, death or property lose.
Anyone purchasing any products described or contained herein for an above-mentioned use shall:
Accept full responsibility and indemnify and defend SANYO ELECTRIC CO., LTD., its affiliates,
subsidiaries and distributors and all their officers and employees, jointly and severally, against any
and all claims and litigation and all damages, cost and expenses associated with such use:
Not impose any responsibilty for any fault or negligence which may be cited in any such claim or
litigation on SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors or any of
their officers and employees jointly or severally.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guarant-
eed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees
are made or implied regarding its use or any infringements of intellectual property rights or other rights of
third parties.
This catalog provides information as of July, 1997. Specifications and information herein are subject to
change without notice.
80
60
100
120
160
140
40
20
0
80
60
100
120
160
140
40
20
0
0
1
2
3
4.6
4
5
0
40
80
120
160
200
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P
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W
P
D
-
Ta
Ambient Temperature, Ta
C
N
o h
ea
t si
nk
P
D
-
Tc
Case Temperature, Ta
C
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