2SK2631
No.6600-1/5
Features
Low ON resistance.
Smaller amount of total gate charge.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : ENN6600
2SK2631
Package Dimensions
unit : mm
2083B
unit : mm
2092B
[2SK2631]
63000 TS IM TA-3024
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
N-Channel Silicon MOSFET
1 : Gate
2 : Drain
3 : Source
4 : Drain
SANYO : TP
5.0
6.5
0.85
0.7
0.6
1.5
5.5
7.0
0.8
1.6
7.5
0.5
1.2
2.3
0.5
1
2
3
4
2.3
2.3
Ultrahigh-Speed Switching Applications
[2SK2631]
1 : Gate
2 : Drain
3 : Source
4 : Drain
SANYO : TP-FA
6.5
2.3
0.5
1.5
5.5
0.8
7.0
1.2
2.5
5.0
0.85
0.5
1.2
0 to 0.2
2.3
2.3
0.6
1
2
4
3
2SK2631
No.6600-2/5
Specifications
Absolute Maximum Ratings
at Ta=25
C
Parameter
Symbol
Conditions
Ratings
Unit
Drain-to-Source Voltage
VDSS
800
V
Gate-to-Source Voltage
VGSS
30
V
Drain Current (DC)
ID
1
A
Drain Current (Pulse)
IDP
PW
10
s, duty cycle
1%
3
A
Allowable Power Dissipation
PD
Tc=25
C
30
W
1.0
W
Channel Temperature
Tch
150
C
Storage Temperature
Tstg
--55 to +150
C
Electrical Characteristics
at Ta=25
C
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Drain-to-Source Breakdown Voltage
V(BR)DSS
ID=1mA, VGS=0
800
V
Zero-Gate Voltage Drain Current
IDSS
VDS=800V, VGS=0
1.0
mA
Gate-to-Source Leakage Current
IGSS
VGS=
30V, VDS=0
100
nA
Cutoff Voltage
VGS(off)
VDS=10V, ID=1mA
3.5
5.5
V
Forward Transfer Admittance
|yfs|
VDS=10V, ID=0.5A
370
740
ms
Static Drain-to-Source On-State Resistance
RDS(on)
ID=0.5A, VGS=15V
7.5
10
Input Capacitance
Ciss
VDS=20V, f=1MHz
300
pF
Output Capacitance
Coss
VDS=20V, f=1MHz
85
pF
Reverse Transfer Capacitance
Crss
VDS=20V, f=1MHz
40
pF
Total Gate Charge
Qg
VDS=200V, ID=1A, VGS=10V
8
nC
Turn-ON Delay Time
td(on)
See specified Test Circuit
12
ns
Rise Time
tr
See specified Test Circuit
8
ns
Turn-OFF Delay Time
td(off)
See specified Test Circuit
27
ns
Fall Time
tf
See specified Test Circuit
16
ns
Diode Forward Voltage
VSD
IS=1A, VGS=0
0.82
1.2
V
Marking : K2631
Switching Time Test Circuit
PW=1
s
D.C.
0.5%
P.G
50
G
RGS
S
D
ID=0.5A
RL=400
VDD=200V
VOUT
2SK2631
VIN
15V
0V
VIN
2SK2631
No.6600-3/5
Static Drain-to-Source
ON State Resistance, R
DS
(on) -
-
2
4
6
8
10
12
14
16
18
0
--75
--50
--25
0
25
50
75
100
125
150
6
0
2
4
6
8
10
12
14
16
18
20
ID -- VGS
Drain Current, I
D
-
-
A
Gate-to-Source Voltage, VGS -- V
0
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
8
10
12
14
16
VDS=10V
ID -- VDS
Drain Current, I
D
-
-
A
Drain-to-Source Voltage, VDS -- V
0.5
1.0
1.5
2.0
2.5
3.0
0
5
10
15
20
25
30
35
40
45
50
0
5
10
15
20
VGS=6V
10V
8V
7V
15V
IT02479
IT02480
Tc=25
C
ID=1.0A
0.5A
0.1A
RDS(on) -- VGS
Static Drain-to-Source
ON State Resistance, R
DS
(on) -
-
Gate-to-Source Voltage, VGS -- V
IT02481
RDS(on) -- Tc
Case Temperature, Tc --
C
IT02482
25
C
Tc= --25
C
75
C
0
1
2
3
4
5
6
7
--50
--25
0
25
50
75
100
125
150
Ciss
Coss
Crss
f=1MHz
0
Ciss, Coss, Crss -- VDS
Ciss, Coss, Crss -
-
pF
Drain-to-Source Voltage, VDS -- V
3
7
2
5
3
7
2
5
1000
100
10
10
15
20
25
30
5
IT02486
IF -- VSD
F
orw
ard Current, I
F
--
A
Drain-to-Source Voltage, VSD -- V
0.001
10
1.0
0.1
0.01
2
5
3
7
2
5
3
7
2
5
3
7
2
5
3
7
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
IT02485
25
C
Tc=75
C
--25
C
VGS=0
VGS(off) -- Tc
Cutof
f V
oltage,
V
GS
(of
f) -
-
V
Case Temperature, Tc --
C
IT02484
VDS=10V
ID=1mA
|yfs| -- ID
F
orw
ard
T
ransfer
Admittance, |yfs| -
-
S
Drain Current, ID -- A
0.01
1.0
0.1
5
2
3
7
5
2
3
7
10
5
2
3
7
0.1
3
1.0
2
7
3
2
5
IT02483
VDS=10V
Tc= -
-25
C
25
C
75
C
I D
=0.5A, V
GS
=10V
I D
=0.5A, V
GS
=15V
2SK2631
No.6600-4/5
0.01
1.0
0.1
5
2
3
7
5
2
3
7
10
5
2
3
7
3
7
2
5
3
7
5
100
10
10
s
1ms
10ms
DC operation
IDP=3A
ID=1A
Tc=25
C
Single pulse
A S O
Drain Current, I
D
--
A
Drain-to-Source Voltage, VDS -- V
1.0
2
3
5 7 10
2
3
5
7 100
2
3
5 71000
0.1
2
3
5
7
1.0
2
IT02489
0
5
10
15
20
25
30
35
40
0
20
40
60
80
100
120
140
160
PD -- Tc
Case Temperature, Tc --
C
Allo
w
able Po
wer Dissipation, P
D
-
-
W
IT02490
VGS -- Qg
Gate-to-Sourse V
oltage,
V
GS
--
V
Total Gate Charge, Qg -- nC
IT02487
SW Time -- ID
Switching
T
ime, SW
T
ime -
-
ns
Drain Current, ID -- A
IT02488
VDD=200V
VGS=15V
tr
td(off)
td(on)
tf
Operation in
this area is
limited by RDS(on).
0
0
1
2
3
4
5
6
7
8
1
2
3
4
5
6
7
8
9
10
VDS=200V
ID=1A
100
s
1.2
1.0
0.8
0.6
0.4
0.2
0
0
20
40
60
80
100
120
140
160
PD -- Ta
Ambient Temperature, Ta --
C
Allo
w
able Po
wer Dissipation, P
D
-
-
W
IT02491
2SK2631
No.6600-5/5
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be expor ted without obtaining the expor t license from the author ities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of June, 2000. Specifications and information herein are subject to
change without notice.
PS
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