Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
N-Channel Silicon MOSFET
Ultrahigh-Speed Switching Applications
Ordering number:ENN6312
2SK2909
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
60100TS (KOTO) TA-2643 No.63121/4
0.4
0.95 0.95
1.9
2.9
0.5
1.5
2.5
0.5
0.16
0 to 0.1
0.8
1.1
2
3
1
Specifications
Absolute Maximum Ratings
at Ta = 25C
Package Dimensions
unit:mm
2091A
[2SK2909]
Features
Low ON resistance.
Ultrahigh-speed switching.
2.5V drive.
C
C
Electrical Characteristics
at Ta = 25C
1 : Gate
2 : Source
3 : Drain
SANYO : CP
Marking : DK
Continued on next page.
PW
10
s, duty cycle
1%
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2SK2909
No.35122/4
Switching Time Test Circuit
50
P.G
2SK2909
S
G
D
VOUT
VDD=10V
VIN
ID=400mA
RL=25
PW=10
s
D.C.
1%
VIN
4V
0V
Continued from preceding page.
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1
V
ID - VDS
ID - VGS
y
fs
-- ID
RDS(on) - VGS
Ta=25
C
VDS=10V
VDS=10V
2
3
5
7
2
3
2
3
5
7
VGS=1.5V
10.0V
8.0V 6.0V
4.0V 3.0V
2.5V
2.0V
Ta=
-25
C
25
C
75
C
0.1A
ID=0.4A
2
3
5
7
2
3
5
7
1.0
0.9
0.8
0.7
0.6
0.5
0.1
0
0.3
0.2
0.4
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
Ta=
-25
C
25
C
75
C
0.1
1.0
10
0
0
0.6
0.4
1.4
2.0
0.2
0.8
1.0
1.2
1.6
1.8
0.2
0.4
0.8
1.0
0.6
1.2
1.4
1.8
1.6
2.0
100
1
0
2
3
4
5
6
7
8
9
10
0
200
300
500
50
150
250
350
400
450
0.01
0.1
1.0
Drain Current, I
D
A
Drain Current, I
D
A
Drain-to-Source Voltage, VDS V
Gate-to-Source Voltage, VGS V
Gate-to-Source Voltage, VGS V
Static Drain-to-Source
On-State Resistance, R
DS
(on)
m
Drain Current, ID A
Forward Transfer Admitance, | y
fs
|S
2SK2909
No.35123/4
tr
SW Time - I D
A S O
P D - Ta
VDD=10V
VGS=4V
IDP=3.2A
Operation in this area
is limited by RDS(on).
2
3
5
7
2
3
5
2
3
5
7
2
3
5 7
2
3
5 7
2
3
2
3
5 7
2
3
5
7
2
3
5
7
7
2
3
2
3
5
7
Ciss,Coss,Crss - VDS
VGS - Qg
f = 1MHz
Ciss
Coss
Crss
2
3
5
7
2
3
5
7
2
3
5
7
VDS=10V
ID=800mA
10ms
1ms
100
s
ID=0.8A
10
1.0
100
1000
0
1
2
3
4
5
6
7
8
9
10
10
1.0
100
td(on)
td(off)
tf
DC operation
1.0
0.1
4
2
0
6
8
10
12
14
16
18
20
1
2
3
4
6
5
0
20
60
40
80
120
100
140
160
0
0
0.04
0.08
0.12
0.16
0.20
0.24
0.25
0.28
0.01
0.1
1.0
0.1
1.0
10
0.01
R DS(on) - Ta
VGS=0
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5
7
I F - VSD
ID=0.4A,V
GS
=4V
ID=0.1A,V
GS
=2.5V
0
20
-20
-40
-60
40
60
80
100
120
160
140
Ta=
-
25
C
25
C
75
C
100
0
200
500
300
350
400
450
50
150
250
0
0.1
0.2
0.3
0.5
0.4
0.6
0.7
0.8
0.9
1.0
0.001
0.01
0.1
10
1.0
Ciss, Coss, Crss
p
F
Drain-to-Source Voltage,VDS V
Drain-to-Source Voltage,VDS V
Total Gate Charge, Qg
nC
Gate-to-Source Voltage,
V
GS
V
Drain Current, ID A
Switching Time, SW Time
n
s
Drain Current, I
D
A
Ta= 25C
Single pulse
Ambient Temperature, Ta
C
Ambient Temperature, Ta
C
Allowable Power Dissipation, P
D
W
Diode Forward Voltage, VSD V
Forward Current,
I F
A
Static Drain-to-Source
On-State Resistance, R
DS(on)
m
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be expor ted without obtaining the expor t license from the author ities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of June, 2000. Specifications and information herein are subject to
change without notice.
2SK2909
PS No.63124/4
PDF 
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