2SK3283
No.7763-1/4
Features
Low ON-resistance.
4V drive.
Specifications
Absolute Maximum Ratings
at Ta=25
C
Parameter
Symbol
Conditions
Ratings
Unit
Drain-to-Source Voltage
VDSS
30
V
Gate-to-Source Voltage
VGSS
20
V
Drain Current (DC)
ID
15
A
Drain Current (Pulse)
IDP
PW
10
s, duty cycle
1%
45
A
Allowable Power Dissipation
PD
1
W
Tc=25
C
20
W
Channel Temperature
Tch
150
C
Storage Temperature
Tstg
--55 to +150
C
Electrical Characteristics
at Ta=25
C
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Drain-to-Source Breakdown Voltage
V(BR)DSS
ID=1mA, VGS=0
30
V
Zero-Gate Voltage Drain Current
IDSS
VDS=30V, VGS=0
1
A
Gate-to-Source Leakage Current
IGSS
VGS=
16V, VDS=0
10
A
Cutoff Voltage
VGS(off)
VDS=10V, ID=1mA
1.0
2.4
V
Forward Transfer Admittance
yfs
VDS=10V, ID=10A
11.2
16
S
Static Drain-to-Source On-State Resistance
RDS(on) 1
ID=10A, VGS=10V
17
23
m
RDS(on) 2
ID=4A, VGS=4V
25
35
m
Input Capacitance
Ciss
VDS=10V, f=1MHz
1550
pF
Output Capacitance
Coss
VDS=10V, f=1MHz
350
pF
Reverse Transfer Capacitance
Crss
VDS=10V, f=1MHz
220
pF
Marking : K3283
Continued on next page.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : ENN7763
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
63004 TS IM TA-2616
2SK3283
N-Channel Silicon MOSFET
Load Switching Applications
2SK3283
No.7763-2/4
Continued from preceding page.
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Turn-ON Delay Time
td(on)
See specified Test Circuit.
12
ns
Rise Time
tr
See specified Test Circuit.
300
ns
Turn-OFF Delay Time
td(off)
See specified Test Circuit.
105
ns
Fall Time
tf
See specified Test Circuit.
100
ns
Total Gate Charge
Qg
VDS=10V, VGS=10V, ID=15A
40
nC
Gate-to-Source Charge
Qgs
VDS=10V, VGS=10V, ID=15A
5
nC
Gate-to-Drain "Miller" Charge
Qgd
VDS=10V, VGS=10V, ID=15A
7
nC
Diode Forward Voltage
VSD
IS=15A, VGS=0
0.92
1.2
V
Package Dimensions
Package Dimensions
unit : mm
unit : mm
2083B
2092B
Switching Time Test Circuit
1 : Gate
2 : Drain
3 : Source
4 : Drain
SANYO : TP
5.0
6.5
0.85
0.7
0.6
1.5
5.5
7.0
0.8
1.6
7.5
0.5
1.2
2.3
0.5
1
2
3
4
2.3
2.3
PW=1
s
D.C.
0.5%
10V
0V
VIN
VIN
P.G
50
G
S
ID=10A
RL=1.5
VDD=15V
VOUT
D
2SK3283
6.5
2.3
0.5
1.5
5.5
0.8
7.0
1.2
2.5
5.0
0.85
0.5
1.2
0 to 0.2
2.3
2.3
0.6
1
2
4
3
1 : Gate
2 : Drain
3 : Source
4 : Drain
SANYO : TP-FA
2SK3283
No.7763-3/4
RDS(on) -- Ta
40
30
20
10
35
25
15
5
160
120
140
100
80
40
60
20
0
--40
--20
--60
0
RDS(on) -- VGS
40
50
0
30
2
4
0
6
12
14
16
18
20
10
8
0
0
ID -- VGS
12
14
16
10
8
6
4
2
2.0
ID -- VDS
15
12
9
6
3
IT00721
IT00722
IT07211
IT07212
0
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
20
10
60
1.5
1.0
0.5
2.5
3.0
10A
10.0V
Ta=25
C
2.5V
VGS=2.0V
ID=4A, V
GS
=4V
ID=10A, V
GS
=10V
VDS=10V
--25
C
T
a=75
C
25
C
3.5V
4.0V
3.0V
6.0V
ID=4A
Ciss, Coss, Crss -- VDS
5
5
7
1000
2
3
0
25
5
10
15
20
30
IT07219
100
2
3
Ciss
Coss
Crss
f=1MHz
0.001
5
3
100
2
10
7
0.3
0.6
1.2
0.4
IT00726
0.01
1.0
0.1
5
3
2
7
0.5
0.7
0.8
0.9
1.0
1.1
0.2
IF -- VSD
VGS=0
25
C
--25
C
T
a=75
C
y
fs
-- ID
100
0.001
0.01
2 3 5 7
0.1
2 3 5 7
1.0
2 3 5 7
10
2 3 5 7
100
2 3 5 7
IT00725
10
1.0
0.1
0.01
5
2
7
3
VDS=10V
Ta
=--2
5
C
25
C
75
C
5
3
2
7
5
3
2
7
5
3
2
7
5
2
7
3
5
2
7
3
5
2
7
3
2
3
5
7
2
3
5
7
5
7
2
3
5
7
2
3
5
7
2
3
td(on)
td(off)
tr
tf
1000
100
10
3
0.1
1.0
10
SW Time -- ID
VDD=15V
VGS=10V
IT07220
Static Drain-to-Source
On-State Resistance, R
DS
(on) -
-
m
Static Drain-to-Source
On-State Resistance, R
DS
(on) -
-
m
Drain-to-Source Voltage, VDS -- V
Drain Current, I
D
-
-
A
Gate-to-Source Voltage, VGS -- V
Drain Current, I
D
-
-
A
Ambient Temperature, Ta --
C
Drain Current, ID -- A
Forward T
ransfer
Admittance,
y
fs
-
-
S
Diode Forward Voltage, VSD -- V
Forward Current, I
F
-
-
A
Drain-to-Source Voltage, VDS -- V
Drain Current, ID -- A
Switching
T
ime, SW
T
ime -
-
ns
Gate-to-Source Voltage, VGS -- V
Ciss, Coss, Crss -
-
pF
2SK3283
No.7763-4/4
PS
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of June, 2004. Specifications and information herein are subject
to change without notice.
0
0
20
40
0.4
0.2
60
0.6
80
100
120
0.8
1.2
1.0
140
160
PD -- Ta
IT07215
0
0
20
40
15
60
20
5
10
80
100
120
25
140
160
PD -- Tc
IT07216
A S O
Operation in this
area is limited by RDS(on).
IDP=45A
ID=15A
100
s
1ms
10ms
IT07214
2
3
5
7
0.01
0.1
2
3
5
7
1.0
2
3
5
7
10
2
3
5
7
100
2 3
5 7
0.01
2 3
5 7
0.1
2
3
5 7
1.0
2
3
5
10
DC operation
VGS -- Qg
3
2
1
0
4
5
5
25
30
35
40
20
15
10
0
IT07213
8
7
6
9
10
VDS=10V
ID=15A
Gate-to-Source V
oltage, V
GS
-
-
V
Amibient Tamperature, Ta --
C
Allowable Power Dissipation, P
D
-
-
W
Case Tamperature, Tc --
C
Allowable Power Dissipation, P
D
-
-
W
Drain Current, I
D
--
A
<
10
s
Tc=25
C
Single pulse
Total Gate Charge, Qg -- nC
Drain-to-Source Voltage, VDS -- V
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