2SK3707
No.7706-1/4
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : ENN7706
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
D1003QA TS IM TA-100958
2SK3707
N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
Features
Low ON-resistance.
4V drive.
Motor driver, DC / DC converter.
Avalanche resistance guarantee.
Specifications
Absolute Maximum Ratings
at Ta=25
C
Parameter
Symbol
Conditions
Ratings
Unit
Drain-to-Source Voltage
VDSS
100
V
Gate-to-Source Voltage
VGSS
20
V
Drain Current (DC)
ID
20
A
Drain Current (Pulse)
IDP
PW
10
s, duty cycle
1%
80
A
Allowable Power Dissipation
PD
2.0
W
Tc=25
C
25
W
Channel Temperature
Tch
150
C
Storage Temperature
Tstg
--55 to +150
C
Avalanche Enargy (Single Pulse) *1
EAS
125
mJ
Avalanche Current *2
IAV
20
A
Note : *1 VDD=20V, L=500
H, IAV=20A
*2 L
500
H, single pulse
Electrical Characteristics
at Ta=25
C
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Drain-to-Source Breakdown Voltage
V(BR)DSS
ID=1mA, VGS=0
100
V
Zero-Gate Voltage Drain Current
IDSS
VDS=100V, VGS=0
1
A
Gate-to-Source Leakage Current
IGSS
VGS=
16V, VDS=0
10
A
Cutoff Voltage
VGS(off)
VDS=10V, ID=1mA
1.2
2.6
V
Forward Transfer Admittance
yfs
VDS=10V, ID=10A
11
17
S
Static Drain-to-Source On-State Resistance
RDS(on)1
ID=10A, VGS=10V
45
60
m
RDS(on)2
ID=10A, VGS=4V
56
80
m
Continued on next page.
2SK3707
No.7706-2/4
Continued from preceding page.
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Input Capacitance
Ciss
VDS=20V, f=1MHz
2150
pF
Output Capacitance
Coss
VDS=20V, f=1MHz
160
pF
Reverse Transfer Capacitance
Crss
VDS=20V, f=1MHz
110
pF
Turn-ON Delay Time
td(on)
See specified Test Circuit.
19.5
ns
Rise Time
tr
See specified Test Circuit.
30
ns
Turn-OFF Delay Time
td(off)
See specified Test Circuit.
185
ns
Fall Time
tf
See specified Test Circuit.
60
ns
Total Gate Charge
Qg
VDS=50V, VGS=10V, ID=20A
44
nC
Gate-to-Source Charge
Qgs
VDS=50V, VGS=10V, ID=20A
7.8
nC
Gate-to-Drain "Miller" Charge
Qgd
VDS=50V, VGS=10V, ID=20A
9.8
nC
Diode Forward Voltage
VSD
IS=20A, VGS=0
0.95
1.2
V
Marking : K3707
Package Dimensions
unit : mm
2063A
Switching Time Test Circuit
Unclamped Inductive Test Circuit
1 : Gate
2 : Drain
3 : Source
SANYO : TO-220ML
1.6
1.2
0.75
14.0
16.0
10.0
18.1
5.6
3.2
7.2
3.5
2.55
2.55
2.4
4.5
2.8
0.7
2.55
2.55
2.4
1
2
3
PW=10
s
D.C.
1%
P.G
50
G
S
D
ID=10A
RL=5
VDD=50V
VOUT
2SK3707
VIN
10V
0V
VIN
50
50
RG
DUT
VDD
L
15V
0V
2SK3707
No.7706-3/4
Drain-to-Source Voltage, VDS -- V
Drain Current, I
D
--
A
Gate-to-Source Voltage, VGS -- V
Drain Current, I
D
--
A
ID -- VDS
IT06745
ID -- VGS
IT06746
0
4.5
0.5
RDS(on) -- VGS
IT06747
RDS(on) -- Tc
IT06748
2
0
120
10
3
4
5
6
7
8
--50
--25
0
25
50
75
100
125
150
9
0
0
40
35
30
25
3.0
0.5
1.0
1.5
2.0
2.5
20
15
10
5
0
40
35
1.0
1.5
2.0
2.5
3.0
3.5
4.0
30
25
20
15
10
5
10V
6V
8V
4V
100
80
60
40
20
110
90
70
50
30
10
0
120
100
80
60
40
20
110
90
70
50
30
10
ID=10A
Tc=
75
C
--25
C
25
C
I D
=
10
A, V
GS
=4V
I D
=
10
A, V
GS
=10V
Tc=25
C
VGS=3V
VDS=10V
Tc= -
-25
C
--25
C
25
C
25
C
75
C
Tc=75
C
0
5
100
1000
5
7
7
5
3
2
30
5
15
20
25
10
Ciss, Coss, Crss -- VDS
IT06752
SW Time -- ID
IT06751
IT06750
0
0.3
0.6
0.9
1.2
1.5
0.001
0.01
100
0.1
1.0
10
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
IF -- VSD
IT06749
y
fs
-- ID
25
C
--25
C
3
2
f=1MHz
Ciss
Coss
Crss
Tc=75
C
0.1
1.0
2
3
5
7
2
3
5
7
2
3
5 7
10
100
100
10
7
2
3
5
7
2
3
5
7
5
1.0
VDS=10V
25
C
Tc= -
-25
C
75
C
VGS=0
100
7
10
3
2
5
7
3
2
5
0.1
1.0
2
3
5
7
2
3
5
7
2
3
5
10
VDD=50V
VGS=10V
td(off)
tf
tr
td(on)
Static Drain-to-Source
On-State Resistance, R
DS
(on) -
-
m
Static Drain-to-Source
On-State Resistance, R
DS
(on) -
-
m
Case Temperature, Tc --
C
Drain Current, ID -- A
F
orw
ard T
ransfer
Admittance,
y
fs
-
-
S
Diode Forward Voltage, VSD -- V
F
orw
ard Drain Current, I
F
--
A
Drain Current, ID -- A
Switching
T
ime, SW
T
ime -
-
ns
Drain-to-Source Voltage, VDS -- V
Ciss, Coss, Crss -
-
pF
Gate-to-Source Voltage, VGS -- V
2SK3707
No.7706-4/4
PS
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be expor ted without obtaining the expor t license from the author ities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of December, 2003. Specifications and information herein are subject
to change without notice.
Total Gate Charge, Qg -- nC
Gate-to-Source V
oltage, V
GS
-
-
V
Drain-to-Source Voltage, VDS -- V
Drain Current, I
D
-
-
A
A S O
2
10
2
3
5
7
2
3
5
7
2
3
5
7
100
1.0
0.1
2
3
5 7
2
3
5 7
2
3
5 7
0.1
1.0
10
100
2
IT06754
VGS -- Qg
IT06753
0
0
20
40
0.5
60
1.5
1.0
80
100
120
2.0
2.5
140
160
PD -- Ta
IT06755
PD -- Tc
IT06756
0
5
0
1
2
3
4
5
6
7
8
50
40
45
35
10
9
10
15
20
25
30
VDS=50V
ID=20A
0
0
20
40
5
60
10
15
80
100
120
20
25
30
140
160
<10
s
Operation in this area
is limited by RDS(on).
10
s
100
s
1ms
10ms
100ms
ID=20A
IDP=80A
DC operation
Tc=25
C
Single pulse
Ambient Temperature, Ta --
C
Allo
w
able Po
wer Dissipation, P
D
-
-
W
Case Temperature, Tc --
C
Allo
w
able Po
wer Dissipation, P
D
-
-
W
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