2SK3815
No.8053-1/4
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : ENN8053
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
93004QA TS IM TB-00000601
2SK3815
N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
Features
Low ON-resistance.
Ultrahigh-speed switching.
4V drive.
Motor drive, DC / DC converter.
Avalanche resistance guarantee.
Specifications
Absolute Maximum Ratings
at Ta=25
C
Parameter
Symbol
Conditions
Ratings
Unit
Drain-to-Source Voltage
VDSS
60
V
Gate-to-Source Voltage
VGSS
20
V
Drain Current (DC)
ID
23
A
Drain Current (Pulse)
IDP
PW
10
s, duty cycle
1%
92
A
Allowable Power Dissipation
PD
1.65
W
Tc=25
C
40
W
Channel Temperature
Tch
150
C
Storage Temperature
Tstg
--55 to +150
C
Avalanche Enargy (Single Pulse) *1
EAS
19.8
mJ
Avalanche Current *2
IAV
23
A
Note : *1 VDD=20V, L=50
H, IAV=23A
*2 L
50
H, single pulse
Electrical Characteristics
at Ta=25
C
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Drain-to-Source Breakdown Voltage
V(BR)DSS
ID=1mA, VGS=0
60
V
Zero-Gate Voltage Drain Current
IDSS
VDS=60V, VGS=0
1
A
Gate-to-Source Leakage Current
IGSS
VGS=
16V, VDS=0
10
A
Cutoff Voltage
VGS(off)
VDS=10V, ID=1mA
1.2
2.6
V
Forward Transfer Admittance
yfs
VDS=10V, ID=12A
9
15
S
Static Drain-to-Source On-State Resistance
RDS(on)1
ID=12A, VGS=10V
42
55
m
RDS(on)2
ID=12A, VGS=4V
60
85
m
Marking : K3815
Continued on next page.
2SK3815
No.8053-2/4
Continued from preceding page.
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Input Capacitance
Ciss
VDS=20V, f=1MHz
775
pF
Output Capacitance
Coss
VDS=20V, f=1MHz
125
pF
Reverse Transfer Capacitance
Crss
VDS=20V, f=1MHz
105
pF
Turn-ON Delay Time
td(on)
See specified Test Circuit.
11
ns
Rise Time
tr
See specified Test Circuit.
85
ns
Turn-OFF Delay Time
td(off)
See specified Test Circuit.
72
ns
Fall Time
tf
See specified Test Circuit.
78
ns
Total Gate Charge
Qg
VDS=30V, VGS=10V, ID=23A
19
nC
Gate-to-Source Charge
Qgs
VDS=30V, VGS=10V, ID=23A
2.5
nC
Gate-to-Drain "Miller" Charge
Qgd
VDS=30V, VGS=10V, ID=23A
4.1
nC
Diode Forward Voltage
VSD
IS=23A, VGS=0
1.04
1.5
V
Package Dimensions
Package Dimensions
unit : mm
unit : mm
2093A
2090A
Switching Time Test Circuit
Unclamped Inductive Test Circuit
1 : Gate
2 : Drain
3 : Source
SANYO : SMP
10.2
20.9
11.5
9.4
0.8
1.6
1.2
0.9
11.0
8.8
4.5
1.3
0.4
2.55
2.55
2.7
1
2
3
PW=10
s
D.C.
1%
P.G
50
G
S
D
ID=12A
RL=2.5
VDD=30V
VOUT
2SK3815
VIN
10V
0V
VIN
50
50
RG
DUT
VDD
L
15V
0V
1 : Gate
2 : Drain
3 : Source
SANYO : SMP-FD
10.2
1.2
2.55
2.55
2.55
2.55
4.5
0 to 0.3
0.4
1.3
9.9
3.0
2.7
1.35
8.8
1.4
1.5max
0.8
0.8
1
2
3
2SK3815
No.8053-3/4
ID -- VDS
ID -- VGS
RDS(on) -- VGS
RDS(on) -- Tc
y
fs
-- ID
IF -- VSD
Ciss, Coss, Crss -- VDS
SW Time -- ID
Static Drain-to-Source
On-State Resistance, R
DS
(on) -
-
m
Static Drain-to-Source
On-State Resistance, R
DS
(on) -
-
m
Gate-to-Source Voltage, VGS -- V
Drain-to-Source Voltage, VDS -- V
Drain Current, I
D
-
-
A
Gate-to-Source Voltage, VGS -- V
Drain Current, I
D
-
-
A
Drain Current, ID -- A
Forward T
ransfer
Admittance,
y
fs
-
-
S
Diode Forward Voltage, VSD -- V
Forward Current, I
F
-
-
A
Drain-to-Source Voltage, VDS -- V
Ciss, Coss, Crss -
-
pF
Drain Current, ID -- A
Switching
T
ime, SW
T
ime -
-
ns
IT07802
IT07803
IT07800
IT07801
0.5
1.0
1.5
2.0
2.5
4.0
3.5
3.0
0
0
5
10
15
30
25
20
0
5
10
15
30
25
20
--50
--25
150
0
30
10
15
20
25
5
100
1000
IT07807
IT07805
IT07804
0.1
1.0
2
3
5
7
3
10
1.0
1.5
1.2
0.3
0.6
0.9
0
0.01
0.1
5
7
3
2
1.0
5
7
3
2
10
5
7
3
2
100
5
7
3
2
7
7
5
5
3
2
3
5
2
3
2
3
2
10
2
3
5
7
2
3
3
4
5
6
7
8
9
2
10
0
100
140
120
40
60
80
20
0
100
140
120
40
60
80
20
1
2
3
4
0
6
5
0
25
50
75
100
125
7
5
3
7
5
4V
VGS=3V
6V
8V
10V
Tc=
25
C
25
C
--25
C
25
C
T
c= -
-25
C
75
C
Tc
=
75
C
VDS=10V
ID=12
A
Tc=75
C
25
C
--25
C
I D
=12A, V
GS
=4V
ID=12A, V
GS
=10V
Tc= -
-25
C
75
C
25
C
VDS=10V
Tc
=
75
C
25
C
--
25
C
VGS=0
f=1MHz
Coss
Ciss
Crss
IT07806
0.1
2
3
1.0
5
7
2
3
5
7
2
3
5
7
10
10
100
1000
3
5
7
2
3
5
7
2
3
5
7
td(off)
tf
td(on)
tr
VDD=30V
VGS=10V
Case Temperature, Tc --
C
2SK3815
No.8053-4/4
PS
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of September, 2004. Specifications and information herein are subject
to change without notice.
IT07809
0.1
1.0
10
100
3
2
5
7
3
2
5
7
2
3
2
5
7
2
3
5
7
2
3
5
5
7
7
1.0
0.1
10
100
2
3
IDP=92A
ID=23A
100
s
1ms
10ms
100ms
DC operation
Operation in
this area is
limited by RDS(on).
IT07808
0
5
10
20
15
0
2
4
6
8
9
1
3
5
7
10
VDS=30V
ID=23A
A S O
VGS -- Qg
Gate-to-Source V
oltage, V
GS
-
-
V
IT07810
0
0
20
40
60
80
100
120
45
35
40
140
160
30
20
25
15
5
10
PD -- Tc
Allo
w
able Po
wer Dissipation, P
D
-
-
W
Case Tamperature, Tc --
C
IT07811
0
0
20
40
60
80
100
120
1.65
140
160
2.0
1.5
1.0
0.5
PD -- Ta
Amibient Tamperature, Ta --
C
Allo
w
able Po
wer Dissipation, P
D
-
-
W
Drain Current, I
D
--
A
10
s
Tc=25
C
Single pulse
Total Gate Charge, Qg -- nC
Drain-to-Source Voltage, VDS -- V
Note on usage : Since the 2SK3815 is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
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