2SK3850
No.8193-1/4
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
31005PB TS IM TA-101202
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
2SK3850
N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
Features
Best suited for motor drive.
Low ON-resistance.
Low Qg.
Specifications
Absolute Maximum Ratings
at Ta=25
C
Parameter
Symbol
Conditions
Ratings
Unit
Drain-to-Source Voltage
VDSS
600
V
Gate-to-Source Voltage
VGSS
30
V
Drain Current (DC)
ID
0.7
A
Drain Current (Pulse)
IDP
PW
10
s, duty cycle
1%
2.8
A
Allowable Power Dissipation
PD
1.0
W
Tc=25
C
15
W
Channel Temperature
Tch
150
C
Storage Temperature
Tstg
--55 to +150
C
Electrical Characteristics
at Ta=25
C
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Drain-to-Source Breakdown Voltage
V(BR)DSS
ID=1mA, VGS=0
600
V
Zero-Gate Voltage Drain Current
IDSS
VDS=600V, VGS=0
100
A
Gate-to-Source Leakage Current
IGSS
VGS=
30V, VDS=0
100
nA
Cutoff Voltage
VGS(off)
VDS=10V, ID=1mA
2.5
3.5
V
Forward Transfer Admittance
yfs
VDS=10V, ID=0.35A
280
560
mS
Static Drain-to-Source On-State Resistance
RDS(on)
VGS=10V, ID=0.35A
14
18.5
Input Capacitance
Ciss
VDS=20V, f=1MHz
96
pF
Output Capacitance
Coss
VDS=20V, f=1MHz
29
pF
Reverse Transfer Capacitance
Crss
VDS=20V, f=1MHz
16
pF
Marking :K3850
Continued on next page.
Ordering number : ENN8193
2SK3850
No.8193-2/4
Continued from preceding page.
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Turn-ON Delay Time
td(on)
See specified Test Circuit.
9
ns
Rise Time
tr
See specified Test Circuit.
11
ns
Turn-OFF Delay Time
td(off)
See specified Test Circuit.
16
ns
Fall Time
tf
See specified Test Circuit.
50
ns
Total Gate Charge
Qg
VDS=200V, VGS=10V, ID=0.7A
4
nC
Diode Forward Voltage
VSD
IS=0.7A, VGS=0
0.89
1.2
V
Package Dimensions
Package Dimensions
unit : mm
unit : mm
2083B
2092B
Switching Time Test Circuit
PW=1
s
D.C.
0.5%
P.G
RGS
50
G
S
D
ID=0.35A
RL=571
VDD=200V
VOUT
2SK3850
VIN
10V
0V
VIN
1 : Gate
2 : Drain
3 : Source
4 : Drain
SANYO : TP
5.0
6.5
0.85
0.7
0.6
1.5
5.5
7.0
0.8
1.6
7.5
0.5
1.2
2.3
0.5
1
2
3
4
2.3
2.3
1 : Gate
2 : Drain
3 : Source
4 : Drain
SANYO : TP-FA
6.5
2.3
0.5
1.5
5.5
0.8
7.0
1.2
2.5
5.0
0.85
0.5
1.2
0 to 0.2
2.3
2.3
0.6
1
2
4
3
2SK3850
No.8193-3/4
tf
5
7
10
100
7
5
2
2
3
3
0.01
2
7
5
3
2
7
5
3
0.1
1.0
SW Time -- ID
td(on)
td(of
f)
tr
IT09154
Ciss, Coss, Crss -- VDS
IT08306
0.01
2
3
5
7
2
3
5
7
0.1
1.0
0
5
10
15
20
25
30
3
7
5
2
7
5
3
0.1
1.0
y
fs
-- ID
VDS=10V
Tc= -
-25
C
IT09153
0.4
0.5
0.6
0.7
0.9
0.8
1.0
IF -- VSD
VGS=0
--25
C
25
C
T
c=75
C
f=1MHz
Ciss
Coss
Crss
IT08309
VDD=200V
VGS=10V
75
C
25
C
3
7
5
7
5
3
2
7
5
3
2
1000
10
100
0.01
2
3
5
7
0.1
2
3
5
7
1.0
5
15
20
10
25
30
--60
--40
--20
0
20
40
60
80
100
120
160
140
2
4
6
8
10
12
14
16
RDS(on) -- VGS
IT09151
5
10
20
15
25
30
RDS(on) -- Tc
IT09152
0
Tc=25
C
ID=0.35A
I D
=0.35A, V
GS
=10V
Static Drain-to-Source
On-State Resistance, R
DS
(on) -
-
Static Drain-to-Source
On-State Resistance, R
DS
(on) -
-
Gate-to-Source Voltage, VGS -- V
Case Temperature, Tc --
C
Drain Current, ID -- A
Forward T
ransfer
Admittance,
y
fs
-
-
S
Drain Current, ID -- A
Switching
T
ime, SW
T
ime -
-
ns
Drain-to-Source Voltage, VDS -- V
Ciss, Coss, Crss -
-
pF
Diode Forward Voltage, VSD -- V
Forward Current, I
F
--
A
0.05
0.10
0.15
0.20
0.25
0.30
0.35
0.40
0.45
0.50
0
0.05
0.10
0.20
0.15
0.30
0.25
0.35
0.40
0.45
0.50
0
0
4
5
7
9
8
10
2
1
3
6
ID -- VDS
VGS=4V
IT08302
0
1
2
3
4
5
6
7
ID -- VGS
IT08303
10V
8V
6V
5V
VDS=10V
T
c=75
C
T
c= -
-25
C
25
C
75
C
--25
C
25
C
Gate-to-Source Voltage, VGS -- V
Drain Current, I
D
--
A
Drain-to-Source Voltage, VDS -- V
Drain Current, I
D
--
A
2SK3850
No.8193-4/4
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of March, 2005. Specifications and information herein are subject
to change without notice.
PS
IT09139
0
0
20
40
60
80
100
120
140
160
0.4
1.2
0.2
0.8
0.6
1.0
PD -- Ta
IT09140
0
0
20
40
60
80
100
120
140
160
10
20
5
15
PD -- Tc
Ambient Temperature, Ta --
C
Allowable Power Dissipation, P
D
--
W
Case Temperature, Tc --
C
Allowable Power Dissipation, P
D
--
W
VGS -- Qg
IT08310
0
2
3
1
4
5
6
7
8
9
10
0
1.0
0.5
1.5
2.0
3.0
2.5
3.5
4.0
1.0
10
100
1000
2
3
5 7
2
3
5 7
2
3
5 7
0.01
1.0
0.1
3
2
7
5
3
2
7
5
3
2
5
Forward Bias A S O
IT09138
VDS=200V
ID=0.25A
100
s
1ms
10ms
100ms
DC operation
IDP=2.8A
<10
s
ID=0.7A
Operation in this
area is limited by RDS(on).
Tc=25
C
Single pulse
Total Gate Charge, Qg -- nC
Gate-to-Source V
oltage, V
GS
--
V
Drain-to-Source Voltage, VDS -- V
Drain Current, I
D
-
-
A
Note on usage : Since the 2SK3850 is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
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