2SK1445LS
No.3448-1/4
Specifications
Absolute Maximum Ratings
at Ta=25
C
Parameter
Symbol
Conditions
Ratings
Unit
Drain-to-Source Voltage
VDSS
450
V
Gate-to-Source Voltage
VGSS
30
V
Drain Current (DC)
ID
5
A
Drain Current (Pulse)
IDP
PW
10
s, duty cycle
1%
20
A
Allowable Power Dissipation
PD
2.0
W
Tc=25
C
30
W
Channel Temperature
Tch
150
C
Storage Temperature
Tstg
--55 to +150
C
Electrical Characteristics
at Ta=25
C
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Drain-to-Source Breakdown Voltage
V(BR)DSS
ID=1mA, VGS=0
450
V
Zero-Gate Voltage Drain Current
IDSS
VDS=450V, VGS=0
1.0
mA
Gate-to-Source Leakage Current
IGSS
VGS=
30V, VDS=0
100
nA
(Note) Be careful in handling the 2SK1445LS because it has no protection diode between gate and source.
Continued on next page.
Marking : K1445
Features
Low ON-resistance.
Ultrahigh-speed switching.
Micaless package facilitating mounting.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : ENN3448B
2SK1445LS
Package Dimensions
unit : mm
2078C
[2SK1445LS]
N1501 TS IM TA-3431 / 61099 TH (KT) / 72597 TS (KOTO) / 7151 JN (KOTO)
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
N-Channel Silicon MOSFET
Ultrahigh-Speed Switching Applications
1 : Gate
2 : Drain
3 : Source
SANYO : TO-220FI(LS)
16.0
14.0
3.6
3.5
7.2
16.1
0.7
2.55
2.55
2.4
1.2
0.9
0.75
0.6
1.2
4.5
2.8
1 2 3
10.0
3.2
2SK1445LS
No.3448-2/4
Continued from preceding page.
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Cutoff Voltage
VGS(off)
VDS=10V, ID=1mA
2.0
3.0
V
Forward Transfer Admittance
yfs
VDS=10V, ID=3A
2.0
4.0
S
Static Drain-to-Source On-State Resistance
RDS(on)
ID=3A, VGS=10V
1.0
1.4
Input Capacitance
Ciss
VDS=20V, f=1MHz
700
pF
Output Capacitance
Coss
VDS=20V, f=1MHz
100
pF
Reverse Transfer Capacitance
Crss
VDS=20V, f=1MHz
40
pF
Turn-ON Delay Time
td(on)
ID=3A, VGS=10V, VDD=200V, RGS=50
15
ns
Rise Time
tr
ID=3A, VGS=10V, VDD=200V, RGS=50
30
ns
Turn-OFF Delay Time
td(off)
ID=3A, VGS=10V, VDD=200V, RGS=50
130
ns
Fall Time
tf
ID=3A, VGS=10V, VDD=200V, RGS=50
45
ns
Diode Forward Voltage
VSD
IS=5A, VGS=0
1.8
V
Switching Time Test Circuit
ITR01406
ITR01407
0
0
12
24
0
2
14
V GS
=10.0V
4.5V
5.0V
5.5V
4.0V
3.5V
3.0V
25
C
Tc= -
-25
C
75
C
0
--60
12
10
8
6
4
2
ITR01408
--40
--20
0
20
40
60
80
100
120
140
160
VDS=10V
VGS=10V
0
--60
5
4
3
2
1
ITR01409
--40
--20
0
20
40
60
80
100
120
140
160
VDS=10V
ID=1mA
8
10
6
4
2
4
8
12
16
20
4
6
8
10
12
0
10
4
5
6
7
8
9
3
2
1
VDS=10V
6.0V
ID -- VDS
Drain Current, I
D
--
A
Drain-to-Source Voltage, VDS -- V
ID -- VGS
Drain Current, I
D
--
A
Cutof
f V
oltage, V
GS
(of
f)
--
V
Gate-to-Source Voltage, VGS -- V
Case Temperature, Tc --
C
ID -- Tc
Drain Current, I
D
--
A
Case Temperature, Tc --
C
VGS(off) -- Tc
PW=1
s
D.C.
0.5%
P.G
RGS
50
ID=3A
RL=66.7
VOUT
2SK1445LS
G
D
S
VGS
10V
VDD
200V
2SK1445LS
No.3448-3/4
3
ITR01414
0
8
12
20
24
28
32
10
4
16
5
1000
100
3
3
5
7
7
5
3
2
2
2
VGS=0
f=1MHz
Ciss
Coss
Crss
ITR01413
3
2
10
1.0
10
100
5
2
3
7
5
7
5
3
2
5
7
2
3
tf
td(off)
tr
VDD=200V
VGS=10V
P.W.=1
s
D.C.
0.5%
td(on)
ITR01412
5
2
7
3
5
7
2
1.0
10
0.1
1.0
2
3
5
7
7
5
2
3
5
7
10
3
Tc= -
-25
C
75
C
ITR01415
5
2
5
10
100
5
7
2
3
5
7
2
3
7
5
1.0
0.1
10
7
7
5
5
7
3
3
2
2
3
2
1000
ITR01416
2.4
2.0
1.6
0.4
0
20
40
60
80
100
120
140
160
0
No heat sink
ITR01417
0
20
40
60
80
100
120
140
160
0
40
30
20
10
25
C
1.2
0.8
ITR01411
--60
--40
--20
0
20
40
60
80
100
120
140
160
0
2.0
1.6
1.2
0.4
0.8
I D
=3A, V
GS
=10V
I D
=3A, V
GS
=20V
ITR01410
0
2
4
6
8
10
12
14
1.8
0.8
1.0
1.2
1.4
1.6
0.6
0.4
Tc=25
C
ID=5A
1A
VDS=10V
3A
ID=5A
100
s
10
s
1ms
10ms
100ms
DC operation
<1
s
IDP=20A
Operation in this
area is limited by RDS(on).
Drain-to-Source Voltage, VDS -- V
Ciss, Coss, Crss -- VDS
Ciss, Coss, Crss -
-
pF
Drain Current, ID -- A
SW Time -- ID
Switching
T
ime, SW
T
ime -
-
ns
Drain Current, ID -- A
y
fs
-- ID
F
orw
ard T
ransfer
Admittance,
y
fs
-
-
S
Drain-to-Source Voltage, VDS -- V
A S O
Drain Current, I
D
--
A
Ambient Temperature, Ta --
C
PD -- Ta
Allo
w
able Po
wer Dissipation, P
D
--
W
Allo
w
able Po
wer Dissipation, P
D
--
W
Case Temperature, Tc --
C
PD -- Tc
Case Temperature, Tc --
C
RDS(on) -- Tc
Gate-to-Source Voltage, VGS -- V
RDS(on) -- VGS
Tc=25
C
Single pulse
Static Drain-to-Source
On-State Resistance, R
DS
(on)
--
Static Drain-to-Source
On-State Resistance, R
DS
(on)
--
2SK1445LS
No.3448-4/4
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be expor ted without obtaining the expor t license from the author ities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of November, 2001. Specifications and information herein are subject
to change without notice.
PS
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