3LP01SS

No.6648-1/4

Ultrahigh-Speed Switching Applications

P-Channel Silicon MOSFET

Features

Low ON-resistance.

Ultrahigh-Speed Switching.

2.5V drive.

Specifications

Absolute Maximum Ratings

at Ta=25

Parameter

Symbol

Conditions

Ratings

Unit

Drain-to-Source Voltage

VDSS

--30

Gate-to-Source Voltage

VGSS

Drain Current (DC)

--0.1

Drain Current (Pulse)

IDP

s, duty cycle

--0.4

Allowable Power Dissipation

0.15

Channel Temperature

Tch

150

Storage Temperature

Tstg

--55 to +150

Electrical Characteristics

at Ta=25

Ratings

Parameter

Symbol

Conditions

min

typ

max

Unit

Drain-to-Source Breakdown Voltage

V(BR)DSS

ID=--1mA, VGS=0

--30

Zero-Gate Voltage Drain Current

IDSS

VDS=--30V, VGS=0

--10

Gate-to-Sourse Leakage Current

IGSS

VGS=

8V, VDS=0

Cutoff Voltage

VGS(off)

VDS=--10V, ID=--100

--0.4

--1.4

Forward Transfer Admittance

yfs

VDS=--10V, ID=--50mA

110

Continued on next page.

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

Ordering number : ENN6648

3LP01SS

Package Dimensions

unit : mm

2179

[3LP01SS]

92500 TS IM TA-1981

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

0.6

0.25

0.2

1.4

0.45

0.3

1.4

0.8

0.3

0.1

1 : Gate
2 : Source
3 : Drain

SANYO : SSFP

3LP01SS

No.6648-2/4

Continued from preceding page.

Ratings

Parameter

Symbol

Conditions

min

typ

max

Unit

RDS(on)1

ID=--50mA, VGS=--4V

10.4

Static Drain-to-Source On-State Resistance

RDS(on)2

ID=--30mA, VGS=--2.5V

15.4

RDS(on)3

ID=--1mA, VGS=--1.5V

Input Capacitance

Ciss

VDS=--10V, f=1MHz

7.5

Output Capacitance

Coss

VDS=--10V, f=1MHz

5.7

Reverse Transfer Capacitance

Crss

VDS=--10V, f=1MHz

1.8

Turn-ON Delay Time

td(on)

See specified Test Circuit

Rise Time

See specified Test Circuit

Turn-OFF Delay Time

td(off)

See specified Test Circuit

120

Fall Time

See specified Test Circuit

130

Total Gate Charge

VDS=--10V, VGS=--10V, ID=--100mA

1.43

Gate-to-Source Charge

Qgs

VDS=--10V, VGS=--10V, ID=--100mA

0.18

Gate-to-Drain "Miller" Charge

Qgd

VDS=--10V, VGS=--10V, ID=--100mA

0.25

Diode Forward Voltage

VSD

IS=--100mA, VGS=0

0.83

1.2

Marking : XA

Switching Time Test Circuit

PW=10

D.C.

--4V

VIN

P.G

ID= --50mA

RL=300

VDD= --15V

VOUT

3LP01SS

VIN

--0.01

--0.02

--0.03

--0.04

--0.06

--0.07

--0.08

--0.09

--0.10

--0.4

--0.05

--0.8

--1.2

--1.6

--2.0

--0.2

--0.6

--1.0

--1.4

--1.8

ID -- VDS

VGS= --1.5V

--3.5V

--6.0V

--2.0V

--4.0V

--3.0V

--2.5V

--0.5

--1.0

--1.5

--2.0

--2.5

--3.0

--4.0

--3.5

--0.02

--0.04

--0.06

--0.08

--0.10

--0.12

--0.14

--0.16

--0.18

--0.20

ID -- VGS

VDS= --10V

--1

--2

--3

--4

--5

--6

--7

--8

--9

--10

RDS(on) -- VGS

Ta=25

ID=30mA

50mA

RDS(on) -- ID

IT00077

IT00079

IT00080

IT00078

a= -

-25

Static Drain-to-Source

On-State Resistance, R

(on) -

Static Drain-to-Source

On-State Resistance, R

(on) -

Drain Current, I

-

A

Drain Current, I

-

A

Drain-to-Source Voltage, VDS -- V

Gate-to-Source Voltage, VGS -- V

Drain Current, ID -- A

--0.01

1.0

--0.1

100

VGS= --4V

Ta=75

--25

3LP01SS

No.6648-3/4

--1

--2

--3

--4

--5

--6

--7

--8

1.6

0.6

0.8

1.0

1.2

1.4

0.2

0.4

--9

--10

VDS= --10V
ID= --0.1A

1.0

--5

--10

--15

100

--20

--30

--25

f=1MHz

IT00085

IT00087

IT00088

Ciss

Coss

Crss

--0.01

--0.1

1000

100

IT00086

VDD= --15V
VGS= --4V

td(off)

td(on)

--60

--40

--20

100

120

140

160

I D

= -

-30mA,

V GS

= -

-2.5V

I D

= --50mA,

V GS

= --4.0V

IT00083

IT00084

IT00081

IT00082

Static Drain-to-Source

On-State Resistance, R

(on) -

Static Drain-to-Source

On-State Resistance, R

(on) -

Static Drain-to-Source

On-State Resistance, R

(on) -

Diode Forward Voltage, VSD -- V

orw

ard Current, I

-

A

IF -- VSD

Drain-to-Source Voltage, VDS -- V

Ciss, Coss, Crss -- VDS

Ciss, Coss, Crss -

-
pF

Drain Current, ID -- A

SW Time -- ID

Switching

ime, SW

ime -

-
ns

Total Gate Charge, Qg -- nC

VGS -- Qg

Gate-to-Sourse V

oltage, V

-

V

Ambient Temperature, Ta --

RDS(on) -- Ta

Drain Current, ID -- A

orw

ard T

ransfer

Admittance,

yfs

-
S

yfs

-- ID

Drain Current, ID -- A

RDS(on) -- ID

Drain Current, ID -- A

RDS(on) -- ID

--0.5

--0.6

--0.7

--0.8

--0.9

--1.0

--1.1

--0.01

--0.1

VGS=0

--25

a=75

--0.01

0.01

--0.1

1.0

0.1

VDS= --10V

Ta= -

-25

--0.01

1.0

--0.1

100

VGS= --2.5V

--0.0001

--0.001

1000

100

VGS= --1.5V

--25

Ta=75

3LP01SS

No.6648-4/4

Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.

SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.

In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be expor ted without obtaining the expor t license from the author ities
concerned in accordance with the above law.

No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.

Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.

Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.

This catalog provides information as of September, 2000. Specifications and information herein are subject

to change without notice.

0.20

0.10

0.05

0.15

120

160

100

140

IT02381

Ambient Temperature, Ta --

PD -- Ta

Allo

able Po

wer Dissipation, P

Note on usage : Since the 3LP01SS is designed for high-speed switching applications, please avoid using

this device in the vicinity of highly charged objects.

Ð­Ð»ÐµÐºÑ‚Ñ€Ð¾Ð½Ð½Ñ‹Ð¹ ÐºÐ¾Ð¼Ð¿Ð¾Ð½ÐµÐ½Ñ‚: 3LP01SS

ÐÐ»ÐµÐºÑ‚Ñ€Ð¾Ð½Ð½Ñ‹Ð¹ ÐºÐ¾Ð¼Ð¿Ð¾Ð½ÐµÐ½Ñ‚: 3LP01SS