CPH3004
No7606-1/7
High-Frequency Medium-Power Amplifier
Applications
Features
High gain-bandwidth product
: fT=8.5GHz typ (VCE=3V).
High current : (IC=100mA).
Ultrasmall-sized package permitting applied sets to be
made small and slim.
Large collector dissipation (600mW max).
Specifications
Absolute Maximum Ratings
at Ta=25
C
Parameter
Symbol
Conditions
Ratings
Unit
Collector-to-Base Voltage
VCBO
9
V
Collector-to-Emitter Voltage
VCEO
6
V
Emitter-to-Base Voltage
VEBO
2
V
Collector Current
IC
100
mA
Collector Dissipation
PC
Mounted on a ceramic board (250mm
2
!
0.8mm)
600
mW
Junction Temperature
Tj
150
C
Storage Temperature
Tstg
--55 to +150
C
Electrical Characteristics
at Ta=25
C
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Collector Cutoff Current
ICBO
VCB=5V, IE=0
1.0
A
Emitter Cutoff Current
IEBO
VEB=1V, IC=0
10
A
DC Current Gain
hFE
VCE=1V, IC=10mA
100
180
Gain-Bandwidth Product
fT1
VCE=1V, IC=10mA
4.0
6.0
GHz
fT2
VCE=3V, IC=30mA
6.5
8.5
GHz
Output Capacitance
Cob
VCB=1V, f=1MHz
1.2
1.6
pF
Reverse Transfer Capacitance
Cre
VCB=1V, f=1MHz
0.9
pF
Forward Transfer Gain
S21e
2
1
VCE=1V, IC=10mA, f=1GHz
6.5
8.5
dB
S21e
2
2
VCE=3V, IC=30mA, f=1GHz
8.5
10.5
dB
Noise Figure
NF
VCE=1V, IC=10mA, f=2GHz
1.7
2.5
dB
Marking : GD
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : ENN7606
CPH3004
Package Dimensions
unit : mm
2152A
[CPH3004]
22004 TS IM TA-100471
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
NPN Epitaxial Planar Silicon Transistor
1 : Gate
2 : Source
3 : Drain
SANYO : CPH3
0.05
0.9
0.7
0.2
1.6
0.6
0.6
1.9
1
2
3
2.8
0.2
2.9
0.15
0.4
CPH3004
No.7606-2/7
0
0
10
Collector-to-Emitter Voltage, VCE -- V
IC -- VCE
Collector Current, I
C
-
-
mA
IT02230
IT02232
IT02231
0.10mA
20
30
40
50
1
3
2
4
5
0
0
Base-to-Emitter Voltage, VBE -- V
IC -- VBE
Collector Current, I
C
-
-
mA
0.2
0.4
0.6
0.8
1.0
1.2
0.1
0.3
0.5
0.7
0.9
1.1
20
40
60
80
100
10
30
50
70
90
3
Collector Current, IC -- mA
hFE -- IC
DC Current Gain, h
FE
1.0
3
5
7
2
3
5
7
2
3
5
7
2
3
10
100
100
2
3
5
7
Collector Current, IC -- mA
f T -- IC
Gain-Bandwidth Product, f
T
-
-
GHz
Collector-to-Base Voltage, VCB -- V
Cob -- VCB
Output Capacitance, Cob -
-
pF
Collector-to-Base Voltage, VCB -- V
Cre -- VCB
Re
v
erse
T
ransfer Capacitance, Cre -
-
pF
IB=0
0.35mA
0.30mA
0.25mA
0.20mA
0.15mA
0.05mA
V
CE
=3V
1V
IT06430
IT06429
IT06431
1.0
f T -- IC
10
2
3
5
7
2
3
5
7
100
1.0
2
3
5
7
10
0.1
0.1
Cob -- VCB
1.0
2
3
5
7
2
3
5
7
10
2
3
5
7
1.0
2
3
5
7
10
0.1
Cre -- VCB
2
3
5
7
2
3
5
7
1.0
10
0.1
2
3
5
7
1.0
2
3
5
7
10
V CE
=3V
1V
f=1MHz
f=1MHz
IT06432
1.0
S21e
2
-- IC
2
3
5
7
2
3
5
7
10
100
0
2
4
6
8
12
10
VCE=3V
1V
Collector Current, IC -- mA
F
orw
ard T
ransfer
Gain,
S21e
2
-
-
dB
1.0
0
1.0
0.5
1.5
Collector Current, IC -- mA
NF -- IC
Noise Figure, NF
--
dB
IT02238
2.0
2.5
3.0
4.0
3.5
5.0
4.5
5
3
2
7
5
3
2
7
10
100
VCE=1V
f=2GHz
VCE
=3V
1V
f=1GHz
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