CPH3413
No.6924-1/4
Features
Low ON-resistance.
Ultrahigh-speed switching.
2.5V drive.
Specifications
Absolute Maximum Ratings
at Ta=25
C
Parameter
Symbol
Conditions
Ratings
Unit
Drain-to-Source Voltage
VDSS
20
V
Gate-to-Source Voltage
VGSS
10
V
Drain Current (DC)
ID
2.2
A
Drain Current (Pulse)
IDP
PW
10
s, duty cycle
1%
8.8
A
Allowable Power Dissipation
PD
Mounted on a ceramic board (900mm
2
!
0.8mm)
1.0
W
Channel Temperature
Tch
150
C
Storage Temperature
Tstg
--55 to +150
C
Electrical Characteristics
at Ta=25
C
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Drain-to-Source Breakdown Voltage
V(BR)DSS
ID=1mA, VGS=0
20
V
Zero-Gate Voltage Drain Current
IDSS
VDS=20V, VGS=0
1
A
Gate-to-Source Leakage Current
IGSS
VGS=
8V, VDS=0
10
A
Cutoff Voltage
VGS(off)
VDS=10V, ID=1mA
0.4
1.3
V
Forward Transfer Admittance
yfs
VDS=10V, ID=1A
2.4
3.5
S
Static Drain-to-Source On-State Resistance
RDS(on)1
ID=1A, VGS=4V
100
130
m
RDS(on)2
ID=0.5A, VGS=2.5V
130
180
m
Marking : KN Continued on next page.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : ENN6924
CPH3413
Package Dimensions
unit : mm
2152A
[CPH3413]
30101 TS IM TA-3063
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
N-Channel Silicon MOSFET
Ultrahigh-Speed Switching Applications
1 : Gate
2 : Source
3 : Drain
SANYO : CPH3
0.05
0.9
0.7
0.2
1.6
0.6
0.6
1.9
1
2
3
2.8
0.2
2.9
0.15
0.4
CPH3413
No.6924-2/4
PW=10
s
D.C.
1%
P.G
50
G
S
D
ID=1A
RL=10
VDD=10V
VOUT
CPH3413
VIN
4V
0V
VIN
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0
Drain-to-Source Voltage, VDS -- V
ID -- VDS
Drain Current, I
D
-
-
A
IT02687
300
250
200
150
100
50
0
0
1
2
3
4
5
6
7
8
9
10
Gate-to-Source Voltage, VGS -- V
RDS(on) -- VGS
Ta=25
C
IT02689
Ambient Temperature, Ta --
C
RDS(on) -- Ta
IT02690
ID=0.5A, V
GS
=2.5V
ID=1.0A, V
GS
=4.0V
--60
0
250
200
150
100
50
--40
--20
0
20
40
60
80
100
120
160
140
0
0.4
0.8
1.2
1.6
2.0
0
2.5
2.0
1.5
1.0
0.5
3.0
Gate-to-Source Voltage, VGS -- V
ID -- VGS
Drain Current, I
D
-
-
A
VDS=10V
T
a=75
C
IT02688
25
C
1.0A
I
D
=0.5A
VGS=1.5V
2.0V
6.0V
4.0V
3.0V
2.5V
--25
C
Static Drain-to-Source
On-State Resistance, R
DS
(on) -
-
m
Static Drain-to-Source
On-State Resistance, R
DS
(on) -
-
m
Continued from preceding page.
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Input Capacitance
Ciss
VDS=10V, f=1MHz
190
pF
Output Capacitance
Coss
VDS=10V, f=1MHz
40
pF
Reverse Transfer Capacitance
Crss
VDS=10V, f=1MHz
25
pF
Turn-ON Delay Time
td(on)
See specified Test Circuit
9
ns
Rise Time
tr
See specified Test Circuit
25
ns
Turn-OFF Delay Time
td(off)
See specified Test Circuit
25
ns
Fall Time
tf
See specified Test Circuit
18
ns
Total Gate Charge
Qg
VDS=10V, VGS=4V, ID=2.2A
2.7
nC
Gate-to-Source Charge
Qgs
VDS=10V, VGS=4V, ID=2.2A
0.6
nC
Gate-to-Drain "Miller" Charge
Qgd
VDS=10V, VGS=4V, ID=2.2A
0.6
nC
Diode Forward Voltage
VSD
IS=2.2A, VGS=0
0.89
1.2
V
Switching Time Test Circuit
CPH3413
No.6924-3/4
0.1
1.0
2
3
5
7
0.01
2
3
5
7
10
2
3
5
7
0
5
10
15
20
0.01
7
5
3
2
0.1
7
5
3
2
1.0
7
5
3
2
10
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0
0
1
2
3
4
1
2
3
Total Gate Charge, Qg -- nC
VGS -- Qg
Gate-to-Source V
oltage, V
GS
-
-
V
VDS=10V
ID=2.2A
IT02695
0
0
20
40
60
80
100
120
1.0
0.8
0.6
0.4
0.2
1.2
140
160
Amibient Temperature, Ta --
C
PD -- Ta
Allo
w
able Po
wer Dissipation, P
D
-
-
W
IT02697
A S O
Drain-to-Source Voltage, VDS -- V
Drain Current, I
D
--
A
IT02696
10
1000
100
7
5
3
2
7
5
3
2
Drain-to-Source Voltage, VDS -- V
Ciss, Coss, Crss -- VDS
Ciss, Coss, Crss -
-
pF
f=1MHz
Ciss
Coss
Crss
IT02694
Drain Current, ID -- A
Switching
T
ime, SW
T
ime -
-
ns
IT02693
Mounted on a ceramic board(900mm
2
!
0.8mm)
Drain Current, ID -- A
IT02691
0.01
0.1
2
3
5
7
1.0
2
3
5
7
2
3
5
10
1.0
7
5
3
2
7
5
3
2
F
orw
ard T
ransfer
Admittance,
y
fs
-
-
S
y
fs
-- ID
VDS=10V
75
C
Ta= -
-25
C
IT02692
Diode Forward Voltage, VSD -- V
F
orw
ard Current, I
F
-
-
A
IF -- VSD
VGS=0
--25
C
25
C
T
a=75
C
0.1
2
3
5
7 1.0
2
3
5
7 10
2
3
5
<10
s
100
s
Operation in
this area is
limited by RDS(on).
ID=2.2A
DC operation
IDP=8.8A
25
C
1ms
10ms
100ms
Ta=25
C
Single pulse
Mounted on a ceramic board (900mm
2
!0.8mm)
1.0
0.1
2
3
5
7
1.0
2
3
5
100
7
5
3
2
7
5
3
2
10
VDD=10V
VGS=4V
td(on)
td(off)
t r
tf
SW Time -- ID
CPH3413
No.6924-4/4
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be expor ted without obtaining the expor t license from the author ities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of March, 2001. Specifications and information herein are subject
to change without notice.
PS
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