2SK3414LS
No.7152-1/4
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : ENN7152
2SK3414LS
Package Dimensions
unit : mm
2078C
[2SK3414LS]
11502 TS IM TA-3298
N-Channel Silicon MOSFET
DC / DC Converter Applications
Specifications
Absolute Maximum Ratings
at Ta=25
C
Parameter
Symbol
Conditions
Ratings
Unit
Drain-to-Source Voltage
VDSS
60
V
Gate-to-Source Voltage
VGSS
20
V
Drain Current (DC)
ID
30
A
Drain Current (Pulse)
IDP
PW
10
s, duty cycle
1%
120
A
Allowable Power Dissipation
PD
2.0
W
Tc=25
C
25
W
Channel Temperature
Tch
150
C
Storage Temperature
Tstg
--55 to +150
C
Electrical Characteristics
at Ta=25
C
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Drain-to-Source Breakdown Voltage
V(BR)DSS
ID=1mA, VGS=0
60
V
Zero-Gate Voltage Drain Current
IDSS
VDS=60V, VGS=0
10
A
Gate-to-Source Leakage Current
IGSS
VGS=
16V, VDS=0
10
A
Cutoff Voltage
VGS(off)
VDS=10V, ID=1mA
1.0
2.4
V
Forward Transfer Admittance
yfs
VDS=10V, ID=15A
21
29
S
RDS(on)1
ID=15A, VGS=10V
20
26
m
Static Drain-to-Source On-State Resistance
RDS(on)2
ID=15A, VGS=4V
26
36
m
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
1 : Gate
2 : Drain
3 : Source
SANYO : TO-220FI(LS)
16.0
14.0
3.6
3.5
7.2
16.1
0.7
2.55
2.55
2.4
1.2
0.9
0.75
0.6
1.2
4.5
2.8
1 2 3
10.0
3.2
Features
Low ON-resistance.
4V drive.
2SK3414LS
No.7152-2/4
Continued from preceding page.
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Input Capacitance
Ciss
VDS=20V, f=1MHz
1700
pF
Output Capacitance
Coss
VDS=20V, f=1MHz
380
pF
Reverse Transfer Capacitance
Crss
VDS=20V, f=1MHz
110
pF
Turn-ON Delay Time
td(on)
See specified Test Circuit.
16
ns
Rise Time
tr
See specified Test Circuit.
100
ns
Turn-OFF Delay Time
td(off)
See specified Test Circuit.
190
ns
Fall Time
tf
See specified Test Circuit.
90
ns
Total Gate Charge
Qg
VDS=10V, VGS=10V, ID=30A
52
nC
Gate-to-Source Charge
Qgs
VDS=10V, VGS=10V, ID=30A
6
nC
Gate-to-Drain "Miller" Charge
Qgd
VDS=10V, VGS=10V, ID=30A
12
nC
Diode Forward Voltage
VSD
IS=30A, VGS=0
0.96
1.2
V
Switching Time Test Circuit
PW=10
s
D.C.
1%
10V
0V
VIN
P.G
50
G
S
ID=15A
RL=2
VDD=30V
VOUT
VIN
D
2SK3414LS
5
10
15
20
25
30
--60
--40
--20
0
20
40
60
80
100
120
140
0
2
4
8
6
10
12
14
16
18
20
10
20
30
40
50
60
70
0
ID -- VDS
IT04123
IT04125
IT04124
IT04126
0
0.2
0.4
0.8
0.6
1.0
1.2
1.4
1.6
1.8
2.0
RDS(on) -- VGS
ID -- VGS
RDS(on) -- Tc
0
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
VGS=2.0V
Tc=75
C
Tc= -
-25
C
Tc=25
C
ID=10A
I D
=10A, V
GS
=4V
I D=10A, V
GS
=10V
--25
C
25
C
25
C
75
C
VDS=10V
2.5V
3.0V
4.0V
3.5V
10.0V
6.0V
8.0V
10
20
30
40
50
0
10
20
30
40
50
60
0
Static Drain-to-Source
On-State Resistance, R
DS
(on) -
-
m
Static Drain-to-Source
On-State Resistance, R
DS
(on) -
-
m
Gate-to-Source Voltage, VGS -- V
Drain-to-Source Voltage, VDS -- V
Drain Current, I
D
--
A
Gate-to-Source Voltage, VGS -- V
Drain Current, I
D
--
A
Case Temperature, Tc --
C
2SK3414LS
No.7152-3/4
2
3
100
2
7
5
3
10
2
7
5
3
1.0
2
7
5
3
0.1
0
2
4
6
8
10
0
5
10
15
20
25
30
35
40
45
50
55
0
10
20
30
40
50
60
70
3
1000
2
7
5
3
100
7
5
10000
2
7
5
3
0.1
2
3
5 7
1.0
2
3
5 7
10
2
3
5 7
100
1000
2
7
5
3
100
2
7
5
3
10
2
100
7
5
3
10
2
7
5
3
1.0
2
7
5
3
0.1
2
7
5
3
0.01
IT04127
IT04128
IT04130
y
fs
-- ID
IF -- VSD
Ciss, Coss, Crss -- VDS
0.001
2 3 5 7
0.01
2 3 5 7
0.1
2 3 5 7
1.0
2 3 5 7
10
2 3 5 7
100
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
IT04129
SW Time -- ID
IT04132
A S O
0.1
2
3
5 7
2
3
5 7
2
3
5 7
1.0
10
100
2
100
7
5
3
10
2
7
5
3
1.0
2
7
5
3
0.1
2
7
5
3
0.01
Tc= -
-25
C
25
C
75
C
VDS=10V
Tc=75
C
25
C
--25
C
VGS=0
VDD=30V
VGS=10V
td(on)
tf
t r
IT04131
VGS -- Qg
VDS=10V
ID=30A
td(off)
IT04134
0
PD -- Tc
0
20
40
60
80
100
120
140
160
5
30
25
20
15
10
IT04133
0
PD -- Ta
0
2.5
2.0
1.5
1.0
0.5
20
40
60
80
100
120
140
160
Ciss
Crss
Coss
f=1MHz
Operation in this
area is limited by RDS(on).
DC Operation
100
s
1ms
10ms
100ms
IDP=120A
ID=30A
10
s
Drain Current, ID -- A
Switching
T
ime, SW
T
ime -
-
ns
Drain Current, ID -- A
F
orw
ard T
ransfer
Admittance,
y
fs
-
-
S
Diode Forward Voltage, VSD -- V
F
orw
ard Current, I
F
--
A
Drain-to-Source Voltage, VDS -- V
Ciss, Coss, Crss -
-
pF
Total Gate Charge, Qg -- nC
Gate-to-Source V
oltage, V
GS
--
V
Allo
w
able Po
wer Dissipation, P
D
--
W
Allo
w
able Po
wer Dissipation, P
D
--
W
Drain-to-Source Voltage, VDS -- V
Drain Current, I
D
-
-
A
No heat sink
Tc=25
C
Single pulse
Ambient Temperature, Ta --
C
Case Temperature, Tc --
C
2SK3414LS
No.7152-4/4
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be expor ted without obtaining the expor t license from the author ities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of January, 2002. Specifications and information herein are subject
to change without notice.
PS
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