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Электронный компонент: CPH5809

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CPH5809
No.7267-1/5
No.
CPH5809
370-0596 11
, , N MOS
1 2
CPH5809 MCH3411 SBS005
Absolute Maximum Ratings / Ta=25
[MOSFET ]
unit
VDSS
30
V
VGSS
10
V
DC
ID
3
A
IDP
PW 10
s, duty cycle 1%
12
A
PD
(600mm
2
0.8mm) 1unit
0.9
W
Tch
150
Tstg
- 55 125
[SBD ]
unit
VRRM
30
V
VRSM
30
V
IO
1
A
IFSM 50Hz 1
10
A
Tj
- 55 125
Tstg
- 55 125
QK
N 7 2 6 7
No. N 7 2 6 7
MOSFET : N MOS
SBD :
DC / DC
83002






(
)

1.6
0.6
0.6
2.8
0.2
2.9
0.05
0.4
0.95
0.2
0.9
0.7
0.15
0.4
1
2
3
4
5
1 : Cathode
2 : Drain
3 : Gate
4 : Source
5 : Anode
SANYO : CPH5
2171
(unit : mm)
83002 TS IM TA-3482
5
4
3
1
2
1 : Cathode
2 : Drain
3 : Gate
4 : Source
5 : Anode
(Top view)
CPH5809
No.7267-2/5
Electrical Characteristics / Ta=25
[MOSFET ]
min
typ
max
unit
V(BR)DSS ID=1mA, VGS=0
30
V
IDSS
VDS=30V, VGS=0
1
A
IGSS
VGS= 8V, VDS=0
10
A
VGS(off)
VDS=10V, ID=1mA
0.4
1.3
V
y
fs
VDS=10V, ID=1.5A
3.5
5.0
S
RDS(on)1
ID=1.5A, VGS=4V
69
90
m
RDS(on)2
ID=1A, VGS=2.5V
84
118
m
Ciss
VDS=10V, f=1MHz
270
pF
Coss
VDS=10V, f=1MHz
38
pF
Crss
VDS=10V, f=1MHz
23
pF
td(on)
10
ns
tr
30
ns
td(off)
42
ns
tf
52
ns
Qg
3.7
nC
Qgs
VDS=10V, VGS=4V, ID=3.0A
0.7
nC
Qgd
0.5
nC
VSD
IS=3.0A, VGS=0
0.85
1.2
V
[SBD ]
min
typ
max
unit
VR
IR=1mA
30
V
VF1
IF=0.5A
0.35
0.4
V
VF2
IF=1A
0.42
0.47
V
IR
VR=15V
500
A
C
VR=10V, f=1MHz
35
pF
trr
IF=IR=100mA,
15
ns
Rthj-a
(600mm
2
0.8mm)
110
/ W
trr
[MOSFET ]
[SBD ]
PW=10
s
D.C.
1%
P.G
50
G
S
D
ID=1.5A
RL=10
VDD=15V
VOUT
CPH5809
VIN
4V
0V
VIN
Duty
10%
50
100
10
--5V
trr
100mA
100mA
10mA
10
s
CPH5809
No.7267-3/5
25
50
75
100
125
150
0
0
0.25
0.50
0.75
1.00
1.25
1.50
1.75
2.00
2.25
2.50
1
2
3
4
5
0
--60
--40
--20
0
20
40
60
80
100
120
140
, VGS -- V
RDS(on) -- VGS
, R
DS
(on) -
- m
IT04634
0
0.1
0.5
1.0
1.5
2.0
2.5
3.0
0
0
0.2
0.3
0.4
1.0
0.5
0.6
0.7
0.8
0.9
, VDS -- V
ID -- VDS
, I
D
-
- A
1.5V
2.5V
2.0V
10.0V
IT04632
, VGS -- V
ID -- VGS
, I
D
-
- A
VDS=10V
IT04633
, Ta --
C
RDS(on) -- Ta
, R
DS
(on) -
- m
IT04635
0
2
4
6
8
10
12
50
100
150
200
300
250
Ta=25
C
1.5A
ID=1.0A
ID=1.0A, V
GS
=2.5V
ID=1.5A, V
GS
=4.0V
4.0V
4.5V
VGS=1.0V
25
C
--25
C
75
C
Ta=75
C
Ta=
--2
5
C
25
C
[MOSFET]
[MOSFET]
[MOSFET]
[MOSFET]
0
5
10
15
20
25
30
100
1000
7
5
3
2
7
5
3
2
10
0.1
2
3
5
2
3
5
7
7
1.0
, ID -- A
SW Time -- ID
, SW Time -
- ns
VDD=15V
VGS=4V
td(on)
td(off)
t r
tf
IT04638
Ciss, Coss, Crss -- VDS
, ID -- A
IT04636
0.01
2 3
5
7
7
0.1
2 3
5 7
1.0
2 3
5
2 3
5
7
0.001
7
5
0.01
3
2
7
5
0.1
3
2
7
5
1.0
3
2
10
10
2
7
5
3
7
5
3
2
100
,
y
fs
-
- S
y
fs
-- ID
VDS=10V
75
C
Ta= -
-25
C
IT04637
0
0.2
0.4
0.6
0.8
1.0
1.2
0.001
0.01
10
7
5
3
2
0.1
7
5
3
2
1.0
7
5
3
2
7
5
3
2
, VSD -- V
, I
F
-
- A
IF -- VSD
VGS=0
, VDS -- V
Ciss, Coss, Crss -
- pF
f=1MHz
Ciss
Coss
Crss
IT04639
25
C
--25
C
25
C
Ta=75
C
[MOSFET]
[MOSFET]
[MOSFET]
[MOSFET]
CPH5809
No.7267-4/5
1.0
0.01
0.1
10
2 3
5
2 3
5
7
2 3
5 7
2 3
5 7
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0
1
2
3
4
5
, Qg -- nC
VGS -- Qg
, V
GS
-
- V
IT04640
0
0
20
40
0.2
0.4
0.6
0.8
0.9
1.0
60
80
100
120
140
160
, Ta --
C
PD -- Ta
, P
D
-
- W
IT04655
(600mm
2
0.8mm) 1unit
A S O
, VDS -- V
, I
D
-
- A
0.01
10
1.0
0.1
2
3
5
7
2
3
5
7
2
3
5
7
3
2
IT04654
Operation in this
area is limited by RDS(on).
100ms
100
s
DC operation
1ms
10ms
10
s
VDS=10V
ID=3A
Ta=25
C
1
(600mm
2
0.8mm) 1unit
IDP=12A
ID=3A
0
0.3
0.4
0.5
0.1
0.2
0.1
0.01
1.0
7
5
3
2
7
5
3
2
, VF -- V
, I
F
-
- A
IF -- VF
Ta=125
C
25
C
75
C
IT00627
50
C
[SBD]
[MOSFET]
[MOSFET]
[MOSFET]
100
C
Is
20ms
t
50Hz
(1)
=60
(2)
=120
(3)
=180
(4)
=180
180
360
360
(2) (4)
(3)
(1)
7 0.01
2
7 0.1
0
5
2
2
3
3
3
7 1.0
5
12
10
8
6
4
2
, t -- s
IS -- t
, I
S
()
-
- A
2
3
5
100
1000
1.0
10
7
2
3
5
7
2
3
5
7
1.0
10
2
3
5
7
2
3
5
, VR -- V
C -- VR
, C
-- pF
f=1MHz
0
100
10
1.0
0.1
0.01
5
7
3
2
5
7
3
2
5
7
3
2
5
7
3
2
30
15
25
5
20
10
, VR -- V
IR -- VR
, I
R
-
- mA
0
0
0.2
0.4
0.6
0.8
1.0
0.8
0.9
0.7
0.6
0.4
0.3
0.2
0.1
0.5
1.0
1.2
1.4
, IO -- A
PF(AV) -- IO
, P
F
(AV)
-
- W
Ta=125
C
25
C
50
C
75
C
100
C
IT00628
IT00629
IT00631
IT00630
[SBD]
[SBD]
[SBD]
[SBD]
CPH5809
No.7267-5/5












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