CPH5810
No.8206-2/5
Electrical Characteristics / Ta=25
unit
min
typ
max
[MOSFET ]
V(BR)DSS
ID= - 1mA, VGS=0
- 30
V
IDSS
VDS= - 30V, VGS=0
- 1
A
IGSS
VGSS= 16V, VDS=0
10
A
VGS(off)
VDS= - 10V, ID= - 1mA
- 1.2
- 2.6
V
yfs
VDS= - 10V, ID= - 1A
1.4
2.0
S
RDS(on)1
ID= - 1A, VGS= - 10V
110
145
m
RDS(on)2
ID= - 500mA, VGS= - 4V
205
290
m
Ciss
VDS= - 10V, f=1MHz
200
pF
Coss
VDS= - 10V, f=1MHz
47
pF
Crss
VDS= - 10V, f=1MHz
32
pF
td(on)
7.2
ns
tr
2.9
ns
td(off)
21
ns
tf
8.7
ns
Qg
VDS= - 10V, VGS= - 10V, ID= - 2A
5.5
nC
Qgs
VDS= - 10V, VGS= - 10V, ID= - 2A
0.98
nC
Qgd
VDS= - 10V, VGS= - 10V, ID= - 2A
0.82
nC
VSD
IS= - 2A, VGS=0
- 0.85
- 1.5
V
[SBD ]
VR
IR=400A
11
V
VF
IF=500mA
0.4
0.45
V
IR
VR=6V
200
A
C
VR=10V, f=1MHz
50
pF
trr
IF=IR=100mA,
10
ns
unit : mm
2171
1
4
2
5
3
1 : Cathode
2 : Drain
3 : Gate
4 : Source
5 : Anode
Top view
1.6
0.6
0.6
2.8
0.2
2.9
0.05
0.4
0.95
0.2
0.9
0.7
0.15
0.4
1
2
3
4
5
1 : Cathode
2 : Drain
3 : Gate
4 : Source
5 : Anode
SANYO : CPH5