CPH5835
No.8207-1/5
370-0596 11
No. N 8 2 0 7
MOSFET : P MOS
SBD :
()
P MOS (MCH3309)( SBS010M) 1
MOS
SBD
Absolute Maximum Ratings / Ta=25
unit
[MOSFET ]
VDSS
- 20
V
VGSS
10
V
DC
ID
- 1.5
A
IDP
PW 10s, duty cycle 1%
- 6.0
A
PD
(600mm
2
0.8mm) 1unit
0.9
W
Tch
150
Tstg
- 55 125
[SBD ]
VRRM
15
V
VRSM
15
V
IO
2
A
IFSM
50Hz 1
10
A
Tj
- 55 125
Tstg
- 55 125
XM
12805PE TS IM TB-00001006
CPH5835
CPH5835
No.8207-2/5
Electrical Characteristics / Ta=25
unit
min
typ
max
[MOSFET ]
V(BR)DSS
ID= - 1mA, VGS=0
- 20
V
IDSS
VDS= - 20V, VGS=0
- 1
A
IGSS
VGS= 8V, VDS=0
10
A
VGS(off)
VDS= - 10V, ID= - 1mA
- 0.4
- 1.3
V
y
fs
VDS= - 10V, ID= - 800mA
1.3
2.3
S
RDS(on)1
ID= - 800mA, VGS= - 4V
180
235
m
RDS(on)2
ID= - 400mA, VGS= - 2.5V
240
340
m
RDS(on)3
ID= - 70mA, VGS= - 1.8V
350
600
m
Ciss
VDS= - 10V, f=1MHz
290
pF
Coss
VDS= - 10V, f=1MHz
40
pF
Crss
VDS= - 10V, f=1MHz
25
pF
td(on)
10
ns
tr
35
ns
td(off)
32
ns
tf
27
ns
Qg
VDS= - 10V, VGS= - 4V, ID= - 1.5A
3.2
nC
Qgs
VDS= - 10V, VGS= - 4V, ID= - 1.5A
0.8
nC
Qgd
VDS= - 10V, VGS= - 4V, ID= - 1.5A
0.6
nC
VSD
IS= - 1.5A, VGS=0
- 0.87
- 1.2
V
[SBD ]
VR
IR=1.5mA
15
V
VF1
IF=0.5A
0.27
0.32
V
VF2
IF=1A
0.30
0.35
V
IR
VR=6V
600
A
C
VR=10V, f=1MHz
65
pF
trr
IF=IR=100mA,
15
ns
Rth(j-a)
600mm
2
0.8mm
138
C / W
unit : mm
2171
5
3
1
2
4
1 : Cathode
2 : Drain
3 : Gate
4 : Source
5 : Anode
Top view
1.6
0.6
0.6
2.8
0.2
2.9
0.05
0.4
0.95
0.2
0.9
0.7
0.15
0.4
1
2
3
4
5
1 : Cathode
2 : Drain
3 : Gate
4 : Source
5 : Anode
SANYO : CPH5