CPH5839
No.8181-1/6
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : ENN8181
CPH5839
MOSFET : N-Channel Silicon MOSFET
SBD : Schottky Barrier Diode
General-Purpose Switching Device
Applications
Features
DC / DC converter applications.
Composite type with a N-Channel Sillicon MOSFET (MCH3409) and a schottky barrier diode (SBS005)
contained in one package facilitating high-density mounting.
[MOSFET]
Low ON-resistance.
Ultrahigh-speed switching.
Low voltage drive.
[SBD]
Short reverse recovery time.
Low forward voltage.
Specifications
Absolute Maximum Ratings
at Ta=25
C
Parameter
Symbol
Conditions
Ratings
Unit
[MOSFET]
Drain-to-Source Voltage
VDSS
20
V
Gate-to-Source Voltage
VGSS
10
V
Drain Current (DC)
ID
2.0
A
Drain Current (Pulse)
IDP
PW
10
s, duty cycle
1%
8.0
A
Allowable Power Dissipation
PD
Mounted on a ceramic board (600mm
2
!
0.8mm) 1unit
0.9
W
Channel Temperature
Tch
150
C
Storage Temperature
Tstg
--55 to +125
C
[SBD]
Repetitive Peak Reverse Voltage
VRRM
30
V
Nonrepetitive Peak Reverse Surge Voltage
VRSM
30
V
Average Output Current
IO
1
A
Surge Forward Current
IFSM
50Hz sine wave, 1 cycle
10
A
Junction Temperature
Tj
--55 to +125
C
Storage Temperature
Tstg
--55 to +125
C
Marking : XR
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
11205PE TS IM TB-00001085
CPH5839
No.8181-2/6
Electrical Characteristics
at Ta=25
C
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
[MOSFET]
Drain-to-Source Breakdown Voltage
V(BR)DSS
ID=1mA, VGS=0
20
V
Zero-Gate Voltage Drain Current
IDSS
VDS=20V, VGS=0
1
A
Gate-to-Source Leakage Current
IGSS
VGS=
8V, VDS=0
10
A
Cutoff Voltage
VGS(off)
VDS=10V, ID=1mA
0.4
1.3
V
Forward Transfer Admittance
yfs
VDS=10V, ID=1A
2.1
3.5
S
RDS(on)1
ID=1A, VGS=4V
100
130
m
Static Drain-to-Source On-State Resistance
RDS(on)2
ID=0.5A, VGS=2.5V
130
180
m
Input Capacitance
Ciss
VDS=10V, f=1MHz
190
pF
Output Capacitance
Coss
VDS=10V, f=1MHz
40
pF
Reverse Transfer Capacitance
Crss
VDS=10V, f=1MHz
25
pF
Turn-ON Delay Time
td(on)
See specified Test Circuit
9
ns
Rise Time
tr
See specified Test Circuit
25
ns
Turn-OFF Delay Time
td(off)
See specified Test Circuit
25
ns
Fall Time
tf
See specified Test Circuit
18
ns
Total Gate Charge
Qg
VDS=10V, VGS=4V, ID=2A
2.7
nC
Gate-to-Source Charge
Qgs
VDS=10V, VGS=4V, ID=2A
0.6
nC
Gate-to-Drain "Miller" Charge
Qgd
VDS=10V, VGS=4V, ID=2A
0.6
nC
Diode Forward Voltage
VSD
IS=2A, VGS=0
0.87
1.2
V
[SBD]
Reverse Voltage
VR
IR=1mA
30
V
Forward Voltage
VF1
IF=0.5A
0.35
0.4
V
VF2
IF=1A
0.42
0.47
V
Reverse Current
IR
VR=15V
500
A
Interterminal Capacitance
C
VR=10V, f=1MHz, 1 cycle
35
pF
Reverse Recovery Time
trr
IF=IR=100mA, See specified Test Circuit.
15
ns
Thermal Resistance
Rth(j-a)
Mounted on a ceramic board (900mm
2
0.8mm)
110
C / W
Package Dimensions
Electrical Connection
unit : mm
2171
1.6
0.6
0.6
2.8
0.2
2.9
0.05
0.4
0.95
0.2
0.9
0.7
0.15
0.4
1
2
3
4
5
1 : Cathode
2 : Drain
3 : Gate
4 : Source
5 : Anode
SANYO : CPH5
5
4
3
1
2
1 : Cathode
2 : Drain
3 : Gate
4 : Source
5 : Anode
Top view
CPH5839
No.8181-3/6
Switching Time Test Circuit
trr Test Circuit
[MOSFET]
[SBD]
PW=10
s
D.C.
1%
P.G
50
G
S
D
ID=1A
RL=10
VDD=10V
VOUT
CPH5839
VIN
4V
0V
VIN
50
100
10
--5V
trr
100mA
100mA
10mA
10
s
Duty
10%
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0
Drain-to-Source Voltage, VDS -- V
ID -- VDS
Drain Current, I
D
-
-
A
IT02687
300
250
200
150
100
50
0
0
1
2
3
4
5
6
7
8
9
10
RDS(on) -- VGS
Ta=25
C
IT02689
Ambient Temperature, Ta --
C
RDS(on) -- Ta
IT02690
ID=0.5A, V
GS
=2.5V
ID=1.0A, V
GS
=4.0V
--60
0
250
200
150
100
50
--40
--20
0
20
40
60
80
100
120
160
140
0
0.4
0.8
1.2
1.6
2.0
0
2.5
2.0
1.5
1.0
0.5
3.0
Gate-to-Source Voltage, VGS -- V
ID -- VGS
Drain Current, I
D
-
-
A
VDS=10V
T
a=75
C
T
a=25
C
IT02688
25
C
75
C
1.0A
ID=0.5A
VGS=1.5V
2.0V
6.0V
4.0V
3.0V
2.5V
--25
C
--25
C
Static Drain-to-Source
On-State Resistance, R
DS
(on) -
-
m
Static Drain-to-Source
On-State Resistance, R
DS
(on) -
-
m
[MOSFET]
[MOSFET]
[MOSFET]
[MOSFET]
Gate-to-Source Voltage, VGS -- V
CPH5839
No.8181-4/6
0.1
1.0
2
3
5
7
0.01
2
3
5
7
10
2
2
3
5
7
IT08174
0.01
2
3
5 7 0.1
2
3
5 7
7
1.0
10
2
3
2
3
5
0
0
1
2
3
4
1
2
3
Total Gate Charge, Qg -- nC
VGS -- Qg
Gate-to-Source V
oltage, V
GS
-
-
V
VDS=10V
ID=2A
IT07115
Amibient Temperature, Ta --
C
PD -- Ta
Allowable Power Dissipation, P
D
-
-
W
A S O
Drain-to-Source Voltage, VDS -- V
Drain Current, I
D
--
A
<
10
s
100
s
Operation in
this area is
limited by RDS(on).
ID=2A
DC operation
IDP=8A
1ms
10ms
100ms
Ta=25
C
Single pulse
Mounted on a ceramic board (600mm
2
!0.8mm) 1unit
0
20
40
60
80
100
120
140
160
0
5
10
15
20
0.01
7
5
3
2
0.1
7
5
3
2
1.0
7
5
3
2
10
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
10
1000
100
7
5
3
2
7
5
3
2
Drain-to-Source Voltage, VDS -- V
Ciss, Coss, Crss -- VDS
Ciss, Coss, Crss -
-
pF
f=1MHz
Ciss
Coss
Crss
IT02694
Drain Current, ID -- A
Switching
T
ime, SW
T
ime -
-
ns
IT02693
Drain Current, ID -- A
IT02691
0.01
0.1
2
3
5
7
1.0
2
3
5
7
2
3
5
10
1.0
7
5
3
2
7
5
3
2
Forward T
ransfer
Admittance,
y
fs
-
-
S
y
fs
-- ID
VDS=10V
75
C
Ta= -
-25
C
IT02692
Diode Forward Voltage, VSD -- V
Forward Current, I
F
-
-
A
IF -- VSD
VGS=0
--25
C
25
C
T
a=75
C
25
C
1.0
0.1
2
3
5
7
1.0
2
3
5
100
7
5
3
2
7
5
3
2
10
VDD=10V
VGS=4V
td(on)
td(off)
t r
tf
SW Time -- ID
[MOSFET]
[MOSFET]
[MOSFET]
[MOSFET]
[MOSFET]
[MOSFET]
[MOSFET]
IT08175
0
0.9
0.8
0.6
0.4
0.2
1.0
Mounted on a ceramic board (600mm
2
!
0.8mm) 1unit
CPH5839
No.8181-5/6
0
0.3
0.4
0.5
0.1
0.2
0.1
0.01
1.0
7
5
3
2
7
5
3
2
IF -- VF
T
a=125
C
25
C
75
C
IT00627
50
C
[SBD]
100
C
Is
20ms
t
180
360
360
(2)
(4) (3)
(1)
7 0.01
2
7 0.1
0
5
2
2
3
3
3
7 1.0
5
12
10
8
6
4
2
IFSM -- t
2
3
5
100
1000
1.0
10
7
2
3
5
7
2
3
5
7
1.0
10
2
3
5
7
2
3
5
C -- VR
f=1MHz
0
100
10
1.0
0.1
0.01
5
7
3
2
5
7
3
2
5
7
3
2
5
7
3
2
30
15
25
5
20
10
IR -- VR
0
0
0.2
0.4
0.6
0.8
1.0
0.8
0.9
0.7
0.6
0.4
0.3
0.2
0.1
0.5
1.0
1.2
1.4
PF(AV) -- IO
Ta=125
C
25
C
50
C
75
C
100
C
IT00628
IT00629
IT00631
IT00630
[SBD]
[SBD]
[SBD]
[SBD]
Sine wave
(1) Rectangular wave
=60
(2) Rectangular wave
=120
(3) Rectangular wave
=180
(4) Sine wave
=180
Rectangular wave
Average Forward Current, IO -- A
A
verage Forward Power Dissipation, P
F
(A
V)
-
-
W
Forward Voltage, VF -- V
Forward Current, I
F
--
A
Reverse Voltage, VR -- V
Reverse Current, I
R
-
-
mA
Time, t -- s
Sur
ge Forward Current, I
FSM
(Peak)
--
A
Current waveform 50Hz sine wave
Reverse Voltage, VR -- V
Interterminal Capacitance, C
-
-
pF
CPH5839
No.8181-6/6
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of January, 2005. Specifications and information herein are subject
to change without notice.
PS
Note on usage : Since the CPH5839 is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
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