CPH6517
No.7385-1/3
Features
Composite type with 2 transistors contained in the
CPH package currently in use, improving the
mounting efficiency greatly.
The CPH6517 is formed with two chips, being
equivalent to the 2SC4555, placed in one package.
Low collector to emitter saturation voltage.
Excellent in thermal equilibrium and pair capability.
Electrical Connection
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : ENN7385
CPH6517
Package Dimensions
unit : mm
2212
[CPH6517]
NPN Epitaxial Planar Silicon Composite Transistor
Specifications
Absolute Maximum Ratings
at Ta=25
C
Parameter
Symbol
Conditions
Ratings
Unit
Collector-to-Base Voltage
VCBO
20
V
Collector-to-Emitter Voltage
VCEO
15
V
Emitter-to-Base Voltage
VEBO
5
V
Collector Current
IC
500
mA
Collector Current(Pulse)
ICP
1
A
Base Current
IB
100
mA
Collector Dissipation
PC
1unit
350
mW
Total Dissipation
PT
500
mW
Junction Temperature
Tj
150
C
Storage Temperature
Tstg
--55 to +150
C
Electrical Characteristics
at Ta=25
C
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Collector Cutoff Current
ICBO
VCB=15V, IE=0
0.1
A
Emitter Cutoff Current
IEBO
VEB=4V, IC=0
0.1
A
Note : The specifications shown above are for each individual transistor.
Continued on next page.
Marking : 3B
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
22503 TS IM TA-100272
B1
E1
C2
C1
B2
E2
(Top view)
TR2
TR1
0.05
0.9
0.7
0.2
1.6
0.6
0.6
0.95
1
2
3
6
5
4
2.8
0.2
2.9
0.15
0.4
1 : Base 1
2 : Emitter 1
3 : Collector 2
4 : Emitter 2
5 : Base 2
6 : Collector 1
SANYO : CPH6
Low-Frequency
General-Purpose Amplifier Applications
CPH6517
No.7385-2/3
Continued from preceding page.
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
DC Current Gain
hFE1
VCE=2V, IC=10mA
160
560
hFE2
VCE=2V, IC=400mA
80
DC Current Gain Ratio
hFE(Small /
VCE=2V, IC=10mA
0.8
0.98
Large)
Gain-Bandwidth Product
fT
VCE=2V, IC=50mA
300
MHz
Output Capacitance
Cob
VCB=10V, f=1MHz
4
pF
Collector-to-Emitter Saturation Voltage
VCE(sat)1
IC=5mA, IB=0.5mA
15
30
mV
VCE(sat)2
IC=200mA, IB=10mA
160
300
mV
Base-to-Emitter Saturation Voltage
VBE(sat)
IC=200mA, IB=10mA
0.95
1.2
V
Collector-to-Base Breakdown Voltage
V(BR)CBO
IC=10
A, IE=0
20
V
Collector-to-Emitter Breakdown Voltage
V(BR)CEO
IC=1mA, RBE=
15
V
Emitter-to-Base Breakdown Voltage
V(BR)EBO
IE=10
A, IC=0
5
V
1.0
10
5 7
2
3
5 7
100
5 7
2
3
5 7
2
3
3
2
3
5
7
100
10
2
5
7
1000
2
3
5
0
0.4
0.8
1.2
1.6
2.0
40
80
120
160
200
0
100
200
300
400
500
600
0
IC -- VCE
ITR10442
IB=0
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
IC -- VBE
ITR10443
100
1000
7
5
3
2
7
5
3
2
1.0
10
5
7
2
3
100
5
7
2
3
5
7
2
3
10
5
7
100
5
7
2
3
5
2
3
hFE -- IC
ITR10444
25
C
Ta=75
C
--25
C
25
C
T
a=75
C
--25
C
VCE=2V
VCE=2V
0.5mA
0.4mA
0.3mA
0.2mA
0.1mA
0.6mA
0.7mA
f T -- IC
ITR10445
5
2
3
5
7
1000
100
7
2
1.0
5
7
10
5
7
2
3
2
3
1.0
2
3
5
7
10
2
3
5
VCE=2V
VCE(sat) -- IC
ITR10447
IC / IB=20
Ta=75
C
25
C
--25
C
Cob -- VCB
ITR10446
f=1MHz
0.8mA
Output Capacitance, Cob -
-
pF
Collector-to-Base Voltage, VCB -- V
Collector Current, IC -- mA
Collector
-to-Emitter
Saturation V
oltage, V
CE
(sat) -
-
mV
Collector Current, IC -- mA
DC Current Gain, h
FE
Collector Current, IC -- mA
Gain-Bandwidth Product, f
T
-
-
MHz
Collector-to-Emitter Voltage, VCE -- V
Collector Current, I
C
-
-
mA
Base-to-Emitter Voltage, VBE -- V
Collector Current, I
C
-
-
mA
1.0mA
0.9mA
CPH6517
No.7385-3/3
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be expor ted without obtaining the expor t license from the author ities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of February, 2003. Specifications and information herein are subject
to change without notice.
PS
1.0
10
5 7
2
3
5 7
100
5 7
2
3
5 7
2
3
5
2
3
5
7
10
1.0
3
7
VBE(sat) -- IC
ITR10448
IC / IB=20
Ta= --25
C
75
C
25
C
Collector Current, IC -- mA
Base-to-Emitter
Saturation V
oltage, V
BE
(sat) -
-
V
Collector Dissipation, P
C
-
-
mW
Ambient Temperature, Ta --
C
IT05367
PC -- Ta
IT05368
100
200
300
400
350
500
600
0
0
175
125
150
100
75
50
25
A S O
100ms
DC operation T
a=25
C
1ms
10ms
ICP=1A
IC=0.5A
2
2
3
5
7
2
3
5
7
1.0
0.1
0.01
2
3
5
7
2
3
5
7
2
0.1
1.0
10
3
100
s
1unit
Collector-to-Emitter Voltage, VCE -- V
Collector Current, I
C
-
-
A
total dissipation
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