CPH6615
No.8069-1/6
370-0596 11
, N P MOS 1
2
4V
Absolute Maximum Ratings / Ta=25
N-channel
P-channel
unit
VDSS
30
- 30
V
VGSS
20
20
V
DC
ID
2.5
- 1.8
A
IDP
PW 10s, duty cycle 1%
10
- 7.2
A
PD
(900mm
2
0.8mm) 1unit
0.9
W
Tch
150
Tstg
- 55 150
Electrical Characteristics / Ta=25
unit
min
typ
max
[N-channel]
V(BR)DSS ID=1mA, VGS=0
30
V
IDSS
VDS=30V, VGS=0
1
A
IGSS
VGS= 16V, VDS=0
10
A
VGS(off)
VDS=10V, ID=1mA
1.2
2.6
V
y
fs
VDS=10V, ID=1.5A
1.2
2.0
S
RDS(on)1
ID=1.5A, VGS=10V
79
105
m
RDS(on)2
ID=1A, VGS=4V
150
210
m
Ciss
VDS=10V, f=1MHz
187
pF
Coss
VDS=10V, f=1MHz
40
pF
Crss
VDS=10V, f=1MHz
33
pF
td(on)
7.8
ns
tr
18.5
ns
td(off)
22
ns
tf
12
ns
WB
No. N 8 0 6 9
D1004PE TS IM TB-00000653
N P MOS
()
CPH6615
CPH6615
No.8069-2/6
unit
min
typ
max
Qg
VDS=10V, VGS=10V, ID=2.5A
5.2
nC
Qgs
VDS=10V, VGS=10V, ID=2.5A
1
nC
Qgd
VDS=10V, VGS=10V, ID=2.5A
0.97
nC
VSD
IS=2.5A, VGS=0
0.9
1.2
V
[P-channel]
V(BR)DSS ID= - 1mA, VGS=0
- 30
V
IDSS
VDS= - 30V, VGS=0
- 1
A
IGSS
VGS= 16V, VDS=0
10
A
VGS(off)
VDS= - 10V, ID= - 1mA
- 1.2
- 2.6
V
yfs
VDS= - 10V, ID= - 1A
1.1
1.8
S
RDS(on)1
ID= - 1A, VGS= - 10V
180
235
m
RDS(on)2
ID= - 0.5A, VGS= - 4V
320
450
m
Ciss
VDS= - 10V, f=1MHz
226
pF
Coss
VDS= - 10V, f=1MHz
43
pF
Crss
VDS= - 10V, f=1MHz
36
pF
td(on)
8.5
ns
tr
10.5
ns
td(off)
29
ns
tf
22
ns
Qg
VDS= - 10V, VGS= - 10V, ID= - 1.8A
5.5
nC
Qgs
VDS= - 10V, VGS= - 10V, ID= - 1.8A
1
nC
Qgd
VDS= - 10V, VGS= - 10V, ID= - 1.8A
0.97
nC
VSD
IS= - 1.8A, VGS=0
- 0.91
- 1.5
V
unit : mm
2238
1 : Gate1
2 : Source2
3 : Gate2
4 : Drain2
5 : Source1
6 : Drain1
SANYO : CPH6
0.05
0.9
0.7
0
.2
1.6
0.6
0.6
0.95
1
2
3
6
5
4
2.8
0.2
2.9
0.15
0.4
6
5
4
1
2
3
1 : Gate1
2 : Source2
3 : Gate2
4 : Drain2
5 : Source1
6 : Drain1
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