EC3H08B
HD Seigi 011023 matumiya-1/2
High-Frequency
Amp Applications, Osc. Applications
Features
Low noise : NF=1.6dB typ (f=2GHz).
High cut-off frequency : fT=10.0GHz typ (VCE=1V).
: fT=12.0GHz typ (VCE=3V).
Low operating voltage.
High Gain :
S21e
2
=9.5dB typ (f=2GHz)
Ultraminiature (1006 size) and thin (0.5mm) leadless
package.
Specifications
Absolute Maximum Ratings
at Ta=25
C
Parameter
Symbol
Conditions
Ratings
Unit
Collector-to- Base Voltage
VCBO
9
V
Collector-to-Emitter Voltage
VCEO
4
V
Emitter-to-Base Voltage
VEBO
2
V
Collector Current
IC
20
mA
Collector Dissipation
PC
80
mW
Junction Temperature
Tj
150
C
Storage Temperature
Tstg
--55 to +150
C
Electrical Characteristics
at Ta=25
C
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Collector Cutoff Current
ICBO
VCB=5V, IE=0
1.0
A
Emitter Cutoff Current
IEBO
VEB=1V, IC=0
10
A
DC Current Gain
hFE
VCE=1V, IC=5mA
100
160
Gain-Bandwidth Product
fT(1)
VCE=1V, IC=3mA
8.0
10.0
GHz
fT(2)
VCE=3V, IC=7mA
10.0
12.0
GHz
Output Capacitance
Cob
VCB=1V, f=1MHz
0.4
0.55
pF
Reverse Transfer Capacitance
Cre
VCB=1V, f=1MHz
0.27
0.40
pF
Forward Transfer Gain
S21e
2
(1)
VCE=1V, IC=3mA, f=2GHz
8.0
9.5
dB
S21e
2
(2)
VCE=3V, IC=7mA, f=2GHz
9.0
10.5
dB
Noise Figure
NF
VCE=1V, IC=3mA, f=2GHz
1.6
2.5
dB
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : 0000000
EC3H08B
Package Dimensions
unit : mm
0000
[EC3H08B]
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
NPN Epitaxial Planar Silicon Transistor
Preliminary
0.35
0.2
0.05
0.15
0.15
0.6
0.4
0.65
0.05
0.25
0.25
0.05
1.0
0.5
0.5
0.05
(Bottom view)
3
1
2
1 : Base
2 : Emitter
3 : Collector
SANYO : ECSP1006
EC3H08B
HD Seigi 011023 matumiya-2/2
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of July, 2000. Specifications and information herein are subject
to change without notice.
This product adopts a
high-frequency process.
Please be careful when
handling it beause it is
susceptible to static
electricity.
Marking : L
Electrical connection (TOP VIEW)
Polarity mark (Top)
Collector
Base
Electrodes : Bottom
Polarity mark
Collector
Base
Emitter
Emitter
L
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