ECH8601
No.7288-1/4
Features
Low ON-resistance.
Suitable for lithim-ion battery use.
Drain common specification.
2.5V drive.
Specifications
Absolute Maximum Ratings
at Ta=25
C
Parameter
Symbol
Conditions
Ratings
Unit
Drain-to-Source Voltage
VDSS
20
V
Gate-to-Source Voltage
VGSS
12
V
Drain Current (DC)
ID
7
A
Drain Current (Pulse)
IDP
PW
10
s, duty cycle
1%
40
A
Allowable Power Dissipation
PD
Mounted on a ceramic board (900mm
2
!
0.8mm)1unit
1.4
W
Total Dissipation
PT
Mounted on a ceramic board (900mm
2
!
0.8mm)
1.5
W
Channel Temperature
Tch
150
C
Storage Temperature
Tstg
--55 to +150
C
Electrical Characteristics
at Ta=25
C
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Drain-to-Source Breakdown Voltage
V(BR)DSS
ID=1mA, VGS=0
20
V
Zero-Gate Voltage Drain Current
IDSS
VDS=20V, VGS=0
1
A
Gate-to-Source Leakage Current
IGSS
VGS=
8V, VDS=0
10
A
Cutoff Voltage
VGS(off)
VDS=10V, ID=1mA
0.5
1.3
V
Forward Transfer Admittance
yfs
VDS=10V, ID=3.5A
7.7
11
S
RDS(on)1
ID=4A, VGS=4.5V
14
17
23
m
Static Drain-to-Source On-State Resistance
RDS(on)2
ID=4A, VGS=4.0V
15
18
24
m
RDS(on)3
ID=4A, VGS=3.1V
17
20
30
m
RDS(on)4
ID=2A, VGS=2.5V
21
24
35
m
Input Capacitance
Ciss
VDS=10V, f=1MHz
910
pF
Output Capacitance
Coss
VDS=10V, f=1MHz
350
pF
Reverse Transfer Capacitance
Crss
VDS=10V, f=1MHz
170
pF
Marking : KC
Continued on next page.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : ENN7288B
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
N1504 TS IM TB-00000096 / 22503 TS IM TA-100363 / O1002 TS IM TA-3673
ECH8601
N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
ECH8601
No.7288-2/4
Continued from preceding page.
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Turn-ON Delay Time
td(on)
See specified Test Circuit.
15
ns
Rise Time
tr
See specified Test Circuit.
100
ns
Turn-OFF Delay Time
td(off)
See specified Test Circuit.
61
ns
Fall Time
tf
See specified Test Circuit.
90
ns
Total Gate Charge
Qg
VDS=10V, VGS=10V, ID=7A
23
nC
Gate-to-Source Charge
Qgs
VDS=10V, VGS=10V, ID=7A
1.3
nC
Gate-to-Drain "Miller" Charge
Qgd
VDS=10V, VGS=10V, ID=7A
3.4
nC
Diode Forward Voltage
VSD
IS=7A, VGS=0
0.83
1.2
V
Package Dimensions
Switching Time Test Circuit
unit : mm
2206B
Electrical Connection
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain2
6 : Drain2
7 : Drain1
8 : Drain1
SANYO : ECH8
1
4
8
5
0.15
0.25
0.25
2.8
2.3
0.65
2.9
0.3
0.9
0.07
PW=10
s
D.C.
1%
P.G
50
G
S
D
ID=3.5A
RL=2.86
VDD=10V
VOUT
ECH8601
VIN
4V
0V
VIN
8
7
6
5
1
2
3
4
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain2
6 : Drain2
7 : Drain1
8 : Drain1
Top view
ECH8601
No.7288-3/4
0
0
1
2
3
4
6
7
8
9
10
11
12
0.2
5
0.4
0.6
0.8
1.5
0.1
0.3
0.5
0.7
0.9 1.0
1.2
1.1
1.3 1.4
ID -- VDS
0
0.5
1.0
1.5
2.0
0
1
3
4
2
5
6
7
8
9
10
ID -- VGS
IT03626
IT03627
VGS=1.0V
1.5V
2.0V
4.0V
3.5V
3.0V
2.5V
VDS=10V
--25
C
25
C
T
a=75
C
Drain-to-Source Voltage, VDS -- V
Drain Current, I
D
--
A
Gate-to-Source Voltage, VGS -- V
Drain Current, I
D
--
A
0.1
1.0
10
0.1
5
3
2
7
5
3
2
10
3
2
7
5
3
2
7
5
3
2
y
fs
-- ID
75
C
25
C
Ta= -
-25
C
IT03630
VDS=10V
0.1
1.0
2
3
5
7
10
2
3
5
7
2
5
3
2
10
100
7
7
5
3
2
SW Time -- ID
td(on)
IT03632
Ciss, Coss, Crss -- VDS
IT03631
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.2
1.1
0.001
0.01
0.1
10
1.0
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
3
2
2
IF -- VSD
0
2
4
6
8
10
12
14
16
18
20
100
1000
3
2
7
7
5
5
3
2
IT03633
VGS=0
td(off)
tf
VDD=10V
VGS=4V
t r
T
a=75
C
25
C
--25
C
Drain Current, ID -- A
Switching
T
ime, SW
T
ime -
-
ns
Drain Current, ID -- A
Forward T
ransfer
Admittance,
y
fs
-
-
S
Diode Forward Voltage, VSD -- V
Forward Current, I
F
--
A
Drain-to-Source Voltage, VDS -- V
Ciss, Coss, Crss -
-
pF
0
10
2
15
4
20
30
25
35
45
40
6
50
8
10
RDS(on) -- VGS
Ta=25
C
ID=2A
4A
--50
10
--25
0
25
50
75
100
125
40
30
35
25
20
15
150
IT03628
IT03629
RDS(on) -- Ta
Static Drain-to-Source
On-State Resistance, R
DS
(on) -
-
Static Drain-to-Source
On-State Resistance, R
DS
(on) -
-
Gate-to-Source Voltage, VGS -- V
Ambient Temperature, Ta --
C
I D
=2A, V
GS
=2.5V
ID=4A, V
GS
=4.0V
f=1MHz
Ciss
Crss
Coss
ECH8601
No.7288-4/4
PS
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of November, 2004. Specifications and information herein are subject
to change without notice.
0
5
10
15
20
25
0
9
10
6
8
7
4
5
2
1
1.5
3
VGS -- Qg
VDS=10V
ID=3.5A
IT03634
A S O
2
3
5
7
100
10
2
3
5
7
2
3
5
7
2
3
5
7
1.0
0.1
0.01
1.0
2
3
5 7
10
0.01
0.1
2
3
5 7
2
3
5 7
2
3
IT03635
IDP=40A
ID=7A
100ms
DC operation
1ms
10ms
<10
s
Operation in this
area is limited by RDS(on).
Total Gate Charge, Qg -- nC
Gate-to-Source V
oltage, V
GS
--
V
Drain-to-Source Voltage, VDS -- V
Drain Current, I
D
-
-
A
Ta=25
C
Single pulse
Mounted on a ceramic board (900mm
2
!0.8mm)
0
0
20
40
0.6
1.0
1.4
1.8
0.4
0.2
0.8
1.2
1.6
1.5
60
80
100
120
140
160
PD -- Ta
IT03636
1unit
Total Dissipation
Ambient Temperature, Ta --
C
Mounted on a ceramic board (900mm
2
!0.8mm)
Allowable Power Dissipation, P
D
--
W
Note on usage : Since the ECH8601 is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
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