EC3A01B
No.6612-1/5
Features
Ultrasmall (1006 size), thin (0.5mm) leadless package.
Especially suited for use in electret condenser microphone for audio equipments and telephones.
Excellent voltage characteristics.
Excellent transient characteristics.
Adoption of FBET process.
Specifications
Absolute Maximum Ratings
at Ta=25
C
Parameter
Symbol
Conditions
Ratings
Unit
Gate-to-Drain Voltage
VGDO
--20
V
Gate Current
IG
10
mA
Drain Current
ID
1
mA
Allowable Power Dissipation
PD
100
mW
Junction Temperature
Tj
150
C
Storage Temperature
Tstg
--55 to +150
C
Electrical Characteristics
at Ta=25
C
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Gate-to-Drain Breakdown Voltage
V(BR)GDO
IG=---100
A
--20
V
Cutoff Voltage
VGS(off)
VDS=5V, ID=1
A
--0.2
--0.6
--1.2
V
Drain Current
IDSS
VDS=5V, VGS=0
140
350
A
Forward Transfer Admittance
yfs
VDS=5V, VGS=0, f=1kHz
0.5
1.2
mS
Input Capacitance
Ciss
VDS=5V, VGS=0, f=1MHz
3.5
pF
Reverse Transfer Capacitance
Crss
VDS=5V, VGS=0, f=1MHz
0.65
pF
*The EC3A01B is classified by IDSS as follows.(unit :
A)
Rank
V4A
V5A
IDSS
140 to 240
210 to 350
Ordering number : ENN6612B
13105GB TS IM / 42503 TS IM TA-100435 / 13001 TS IM TA-3160
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
EC3A01B
N-Channel Silicon Junction FET
Electret Condenser Microphone
Applications
EC3A01B
No.6612-2/5
[Ta=25
C, VCC=4.5V, RL=1k
, Cin=15pF, See Specified Test Circuit]
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Voltage Gain
GV
f=1kHz, VIN=10mV
--3.0
dB
Reduced Voltage Characteristics
GVV
f=1kHz, VIN=10mV, VCC=4.5
1.5V
--1.2
--3.5
dB
Frequency Characteristics
Gvf
f=1kHz to 110kHz
--1.0
dB
Input Impedance
ZIN
f=1kHz
25
M
Output Impedance
ZO
f=1kHz
1000
Total Harmonic Distortion
THD
f=1kHz, VIN=30mV
1.2
%
Output Noise Voltage
VNO
VIN=0, A Curve
--110
dB
Package Dimensions
unit : mm
2188A
Type No. Indication
(Top view)
Electrical Connection
(Top view)
Switching Time Test Circuit
1 : Drain
2 : Source
3 : Gate
SANYO : ECSP1006-3
0.35
0.2
0.05
0.15
0.15
0.6
0.4
0.65
0.05
0.25
0.25
0.05
1.0
0.5
0.5
0.05
1
3
2
Top View
Bottom View
Marking
3
2
1
Polarity mark (On the top)
Drain
Source
Gate
*Electrodes : On the bottom
Polarity mark
Drain
Source
Gate
V
VCC=4.5V
33
F
1k
1k
OSC
15pF
VCC=1.5V
+
V
B A
THD
VTVM
Voltage Gain
Frequency Characteristics
Distortion
Reduced Voltage Characteristics
Output Impedance
EC3A01B
No.6612-3/5
Drain-to-Source Voltage, VDS -- V
0
1
8
9
10
2
3
4
5
6
7
Drain Current, I
D
--
A
500
400
300
200
100
0
ID -- VDS
IT02310
VGS=0
--0.1V
--0.2V
--0.4V
--0.5V
--0.3V
Drain-to-Source Voltage, VDS -- V
0
1
2
3
4
5
Drain Current, I
D
--
A
500
400
300
200
100
0
ID -- VDS
IT03015
VGS=0
--0.1V
--0.2V
--0.4V
--0.5V
--0.3V
--1.0
--0.9
--0.8
--0.7
--0.6
--0.5
--0.4
--0.3
--0.2
--0.1
0
500
400
300
200
100
0
ID -- VGS
Gate-to-Source Voltage, VGS -- V
Drain Current, I
D
--
A
ID -- VGS
Gate-to-Source Voltage, VGS -- V
Drain Current, I
D
--
A
IT02312
IT02313
VDS=5V
400
320
240
160
80
0
--0.7
--0.6
--0.5
--0.4
--0.3
--0.2
--0.1
0
I DSS
=350
A
250
A
150
A
Ta=75
C
VDS=5V
25
C
--25
C
10
1.0
0.1
100
0
50
100
150
200
THD -- VIN
Input Voltage, VIN -- mV
T
otal Harmonic Distortion,
THD
-
-
%
IT02316
80
100
120
40
20
60
0
0
160
140
120
100
80
60
40
20
PD -- Ta
Ambient Temperature, Ta --
C
Allowable Power Dissipation, P
D
-
-
mW
IT02317
VGS(off) -- IDSS
Drain Current, IDSS --
A
Cutoff Voltage, V
GS
(off)
-
-
V
IT02315
THD : VCC=4.5V
f=1kHz
IDSS : VDS=5.0V
--0.30
--0.35
--0.40
--0.45
--0.50
--0.55
--0.60
--0.65
--0.70
0
100
200
300
400
500
VDS=5V
ID=1
A
250
A
350
A
IDSS
=150
A
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
0
100
200
300
400
500
y
fs
-- IDSS
Drain Current, IDSS --
A
Forward T
ransfer
Admittance,
y
fs
-
-
mS
IT02314
VDS=5V
VGS=0
f=1kHz
EC3A01B
No.6612-4/5
5
7
10
3
2
7
10
7
5
3
2
3
2
1.0
Ciss -- VDS
Drain-to-Source Voltage, VDS -- V
Input Capacitance, Ciss
-
-
pF
IT02318
1.0
2
3
7
5
3
7
10
7
5
3
2
2
1.0
Crss -- VDS
Drain-to-Source Voltage, VDS -- V
Re
v
erse
T
ransfer Capacitance, Crss
-
-
pF
IT02319
3
VGS=0
f=1MHz
VGS=0
f=1MHz
0
100
200
300
400
500
GV -- IDSS
Drain Current, IDSS --
A
V
oltage Gain, G
V
-
-
dB
IT02320
--1.7
--1.5
--1.3
--1.1
--0.9
--0.7
--0.5
GVV -- IDSS
Drain Current, IDSS --
A
Reduced V
oltage
Characteristics,
G
VV
-
-
dB
IT02321
--7
--6
--5
--4
--3
--2
--1
0
0
100
200
300
400
500
GVV : VCC=4.5V
1.5V
VIN=10mV
f=1kHz
IDSS : VDS=5.0V
GV : VCC=4.5V
VIN=10mV
RL=1.0k
f=1kHz
IDSS : VDS=5.0V
0
100
200
300
400
500
27
28
29
30
31
32
26
Zi -- IDSS
Drain Current, IDSS --
A
Input Impedance, Zi
-
-
M
IT02323
910
920
930
940
950
960
900
ZO -- IDSS
Drain Current, IDSS --
A
Output Impedance, Z
O
-
-
IT02324
--119
--118
--117
--116
--115
--114
--113
--112
--111
--120
VNO -- IDSS
Drain Current, IDSS --
A
Output
Noise V
oltage, V
NO
-
-
dB
IT02325
0
100
200
300
400
500
0
100
200
300
400
500
0
100
200
300
400
500
0
THD -- IDSS
Drain Current, IDSS --
A
T
otal Harmonic Distortion,
THD
-
-
%
IT02322
0.5
1.0
1.5
2.0
2.5
Zi : VCC=4.5V
VIN=10mV
f=1kHz
IDSS : VDS=5.0V
THD : VCC=4.5V
VIN=30mV
f=1MHz
IDSS : VDS=5.0V
VNO : VCC=4.5V
VIN=0, A Curve
RL=1.0k
IDSS : VDS=5.0V
ZO : VCC=4.5V
VIN=10mV
f=1kHz
IDSS : VDS=5.0V
EC3A01B
No.6612-5/5
PS
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of January, 2005. Specifications and information herein are subject
to change without notice.
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