2SJ650
No.7500-1/4
Features
Low ON-resistance.
Ultrahigh-speed switching.
4V drive.
Specifications
Absolute Maximum Ratings
at Ta=25
C
Parameter
Symbol
Conditions
Ratings
Unit
Drain-to-Source Voltage
VDSS
--60
V
Gate-to-Source Voltage
VGSS
20
V
Drain Current (DC)
ID
--12
A
Drain Current (Pulse)
IDP
PW
10
s, duty cycle
1%
--48
A
Allowable Power Dissipation
PD
2.0
W
Tc=25
C
20
W
Channel Temperature
Tch
150
C
Storage Temperature
Tstg
--55 to +150
C
Electrical Characteristics
at Ta=25
C
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Drain-to-Source Breakdown Voltage
V(BR)DSS
ID=--1mA, VGS=0
--60
V
Zero-Gate Voltage Drain Current
IDSS
VDS=--60V, VGS=0
--1
A
Gate-to-Source Leakage Current
IGSS
VGS=
16V, VDS=0
10
A
Cutoff Voltage
VGS(off)
VDS=--10V, ID=--1mA
--1.2
--2.6
V
Forward Transfer Admittance
yfs
VDS=--10V, ID=--6A
7
10
S
Marking : J650
Continued on next page.
P-Channl Silicon MOSFET
Ordering number : ENN7500
2SJ650
51903 TS IM TA-100560
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
DC / DC Converter Applications
Package Dimensions
unit : mm
2063A
[2SJ650]
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
1 : Gate
2 : Drain
3 : Source
SANYO : TO-220ML
1.6
1.2
0.75
14.0
16.0
10.0
18.1
5.6
3.2
7.2
3.5
2.55
2.55
2.4
4.5
2.8
0.7
2.55
2.55
2.4
1
2
3
2SJ650
No.7500-2/4
Continued from preceding page.
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Static Drain-to-Source On-State Resistance
RDS(on)1
ID=--6A, VGS=--10V
100
135
m
RDS(on)2
ID=--6A, VGS=--4V
145
205
m
Input Capacitance
Ciss
VDS=--20V, f=1MHz
1020
pF
Output Capacitance
Coss
VDS=--20V, f=1MHz
110
pF
Reverse Transfer Capacitance
Crss
VDS=--20V, f=1MHz
76
pF
Turn-ON Delay Time
td(on)
See specified Test Circuit.
10
ns
Rise Time
tr
See specified Test Circuit.
145
ns
Turn-OFF Delay Time
td(off)
See specified Test Circuit.
85
ns
Fall Time
tf
See specified Test Circuit.
96
ns
Total Gate Charge
Qg
VDS=--30V, VGS=--10V, ID=--12A
21
nC
Gate-to-Source Charge
Qgs
VDS=--30V, VGS=--10V, ID=--12A
3.8
nC
Gate-to-Drain"Miller"Charge
Qgd
VDS=--30V, VGS=--10V, ID=--12A
4.5
nC
Diode Forward Voltage
VSD
IS=--12A, VGS=0
--0.9
--1.2
V
Switching Time Test Circuit
PW=10
s
D.C.
1%
P.G
50
G
S
D
ID= --6A
RL=5
VDD= --30V
VOUT
2SJ650
VIN
0V
--10V
VIN
Gate-to-Source Voltage, VGS -- V
Drain Current, I
D
-
-
A
Drain-to-Source Voltage, VDS -- V
Drain Current, I
D
-
-
A
ID -- VDS
IT06157
ID -- VGS
IT06158
0
0
--20
--25
--10
--15
--5
--5.0
--0.5
--1.0
--1.5
--2.0
--2.5
--3.0
--3.5
--4.0
--4.5
0
0
--20
--25
--10
--15
--5
--5.0
--0.5
--1.0
--1.5
--2.0
--2.5
--3.0
--3.5
--4.0
--4.5
ID -- VDS
Tc=25
C
--10V
--6V
--4V
--8V
VGS= --3V
T
c= -
-25
C
Tc= -
-25
C
75
C
75
C
25
C
25
C
VDS= --10V
2SJ650
No.7500-3/4
Diode Forward Voltage, VSD -- V
F
orw
ard Current, I
F
-
-
A
Drain-to-Source Voltage, VDS -- V
Ciss, Coss, Crss -
-
pF
Drain Current, ID -- A
F
orw
ard T
ransfer
Admittance,
y
fs
-
-
S
Drain Current, ID -- A
Switching
T
ime, SW
T
ime -
-
ns
Total Gate Charge, Qg -- nC
Gate-to-Source V
oltage, V
GS
-
-
V
0
100
10
1000
7
5
5
3
2
7
5
3
2
3
2
--30
--5
--15
--20
--25
--10
Ciss, Coss, Crss -- VDS
IT06164
--0.1
--1.0
2
3
5
7
--10
2
3
5
7
100
1000
7
7
5
3
2
7
5
3
2
5
10
SW Time -- ID
IT06163
0
0
--2
--1
--4
--3
--5
--6
--7
--8
--9
25
10
5
15
20
--10
VGS -- Qg
IT06165
IT06161
--0.1
1.0
10
2
3
5
7
2
2
3
5
7
--1.0
3
--10
100
7
5
7
3
5
3
2
7
5
3
2
y
fs
-- ID
VDS= --30V
ID= --12A
Cutof
f V
oltage, V
GS
(of
f) -
-
V
VDD= --30V
VGS= --10V
td(off)
tf
tr
td(on)
VDS= --10V
Tc= -
-25
C
25
C
75
C
f=1MHz
Ciss
Coss
Crss
Static Drain-to-Source
On-State Resistance, R
DS
(on) -
-
m
Case Temperature, Tc --
C
Static Drain-to-Source
On-State Resistance, R
DS
(on) -
-
m
Gate-to-Source Voltage, VGS -- V
RDS(on) -- VGS
IT06159
RDS(on) -- Tc
IT06160
0
0
300
50
0
300
100
150
200
250
--10
--1
--2
--3
--4
--5
--6
--7
--8
--50
--25
0
25
50
75
100
125
150
--9
ID= --6A
75
C
Tc= --25
C
25
C
50
100
150
200
250
I D
=
--
6A, V
GS
=
--
4V
ID=
--6A, V
GS
= --
10V
--50
0
--25
0
25
50
75
100
--2.0
--1.5
--0.5
--1.0
--2.5
125
150
VGS(off) -- Tc
IT06169
Case Temperature, Tc --
C
VDS= --10V
ID= --1mA
IT06162
0
--0.3
--0.6
--0.9
--1.2
--1.5
--0.01
--100
--0.1
7
5
3
2
--1.0
7
5
3
2
--10
7
5
3
2
7
5
3
2
IF -- VSD
VGS=0
Tc=75
C
25
C
--25
C
2SJ650
No.7500-4/4
PS
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be expor ted without obtaining the expor t license from the author ities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of May, 2003. Specifications and information herein are subject
to change without notice.
Drain-to-Source Voltage, VDS -- V
Drain Current, I
D
--
A
A S O
2
3
5
7
2
3
5
7
2
3
5
--10
7
--100
--1.0
--0.1
2
3
5
7
2
3
5
7
2
3
5
7
--0.1
--1.0
--10
--100
IT06166
Operation in this area
is limited by RDS(on).
Tc=25
C
Single pulse
ID= --12A
IDP= --48A
DC operation
<
10
s
10
s
100
s
10ms
100ms
1ms
Ambient Tamperature, Ta --
C
Allo
w
able Po
wer Dissipation, P
D
-
-
W
Case Temperature, Tc --
C
Allo
w
able Po
wer Dissipation, P
D
-
-
W
0
0
20
40
0.5
60
1.5
1.0
80
100
120
2.0
2.5
140
160
PD -- Ta
IT06167
0
0
20
40
60
80
100
120
20
15
5
10
25
140
160
PD -- Tc
IT06168
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