50C02SS
No.7519-1/4
Applications
Low-frequency Amplifer, high-speed switching,
small motor drive, muting circuit.
Features
Large current capacitance.
Low collector-to-emitter saturation voltage (resistance).
RCE(sat) typ=175m
[IC=0.5A, IB=50mA].
Ultrasmall package facilitates miniaturization in end
products.
Small ON-resistance (Ron).
Specifications
Absolute Maximum Ratings
at Ta=25
C
Parameter
Symbol
Conditions
Ratings
Unit
Collector-to-Base Voltage
VCBO
60
V
Collector-to-Emitter Voltage
VCEO
50
V
Emitter-to-Base Voltage
VEBO
5
V
Collector Current
IC
400
mA
Collector Current (Pulse)
ICP
800
mA
Collector Dissipation
PC
Mounted on a glass-epoxy board (20
!
30
!
1.6mm)
200
mW
Junction Temperature
Tj
150
C
Storage Temperature
Tstg
--55 to +150
C
Electrical Characteristics
at Ta=25
C
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Collector Cutoff Current
ICBO
VCB=40V, IE=0
100
nA
Emitter Cutoff Current
IEBO
VEB=4V, IC=0
100
nA
DC Current Gain
hFE
VCE=2V, IC=10mA
300
800
Gain-Bandwidth Product
fT
VCE=10V, IC=50mA
500
MHz
Marking : YN
Continued on next page.
NPN Epitaxial Planar Silicon Transistor
Ordering number : ENN7519
50C02SS
52703 TS IM TA-100152
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
Low-Frequency
General-Purpose Amplifier Applications
Package Dimensions
unit : mm
2159A
[50C02SS]
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
1 : Base
2 : Emitter
3 : Collector
SANYO : SSFP
0.6
0.25
0.2
0.07
0.07
1.4
0.45
1
3
2
0.3
0.3
1.4
0.8
0.1
1
3
2
Top View
Side View
Side View
Bottom View
50C02SS
No.7519-2/4
Continued from preceding page.
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Output Capacitance
Cob
VCB=10V, f=1MHz
2.8
pF
Collector-to-Emitter Saturation Voltage
VCE(sat)
IC=100mA, IB=10mA
50
100
mV
Base-to-Emitter Saturation Voltage
VBE(sat)
IC=100mA, IB=10mA
0.9
1.2
V
Collector-to-Base Breakdown Voltage
V(BR)CBO
IC=10
A, IE=0
60
V
Collector-to-Emitter Breakdown Voltage
V(BR)CEO
IC=1mA, RBE=
50
V
Emitter-to-Base Breakdown Voltage
V(BR)EBO
IE=10
A, IC=
0
5
V
Turn-ON Time
ton
See specified Test Circuit.
30
ns
Storage Time
tstg
See specified Test Circuit.
340
ns
Fall Time
tf
See specified Test Circuit.
55
ns
Switching Time Test Circuit
VR
RB
VCC=25V
VBE= --5V
+
+
50
INPUT
OUTPUT
RL
220
F
470
F
PW=20
s
IB1
D.C.
1%
IB2
IC=20IB1= --20IB2=200mA
hFE -- IC
IT05108
IC -- VCE
IT05106
IC -- VBE
IT05107
Collector-to-Emitter Voltage, VCE -- mV
Collector Current, I
C
-
-
mA
Base-to-Emitter Voltage, VBE -- V
Collector Current, I
C
-
-
mA
Collector Current, IC -- mA
DC Current Gain, h
FE
1.0
10
100
1000
3
2
5
7
3
2
5
7
3
2
5
7
1000
100
10
2
3
5
7
2
3
5
7
0
0
350
400
300
200
250
500
450
200
150
100
50
0
200
300
600
500
400
100
500
1000
800
900
100
300
400
600
700
0
0.2
0.4
0.6
0.8
1.2
1.0
T
a=75
C
--25
C
25
C
VCE=2V
VCE=2V
IB=0
200
A
600
A
1mA
2mA
3mA
5mA
7mA
8mA
30mA
20mA
15mA
10mA
Ta=75
C
25
C
--25
C
IT05411
1.0
2
3
5
10
100
7
2
3
5 7
1000
2
3
5
7
2
5
7
5
7
3
2
100
3
10
--25
C
25
C
Ta=75
C
IC / IB=10
VCE(sat) -- IC
Collector Current, IC -- mA
Collector
-to-Emitter
Saturation V
oltage, V
CE
(sat) -
-
mV
50C02SS
No.7519-3/4
fT -- IC
IT05113
Cob -- VCB
IT05112
VCE(sat) -- IC
IT05110
Collector
-to-Emitter
Saturation V
oltage, V
CE
(sat) -
-
mV
Collector Current, IC -- mA
Collector Current, IC -- mA
Output Capacitance, Cob
-
-
pF
Collector-to-Base Voltage, VCB -- V
Gain-Bandwidth Product, f
T
-
-
MHz
0
0
20
40
60
80
100
120
200
150
100
50
250
140
160
PC -- Ta
IT05114
Collector Dissipation, P
C
-
-
mW
Ambient Temperature, Ta --
C
IT05111
VBE(sat) -- IC
Collector Current, IC -- mA
Base-to-Emitter
Saturation V
oltage, V
BE
(sat) -
-
V
1.0
5
3
100
1000
7
5
3
2
1000
100
2
7
5
3
2
7
5
3
2
7
10
2
7
3
5
2
7
3
5
10
100
1.0
10
1.0
7
5
3
2
1.0
2
3
5
3
5 7 10
2
7
2
3
5
7
100
1000
10
1.0
0.1
7
5
3
2
7
5
3
2
75
C
Ta= --25
C
25
C
IC / IB=20
f=1MHz
VCE=10V
IT05110
1000
2
3
100
7
5
2
3
7
5
10
1.0
2
3
5
10
100
7
2
3
5
7
2
3
5
7 1000
IC / IB=50
--25
C
25
C
Ta=75
C
VCE(sat) -- IC
IT05109
Collector Current, IC -- mA
Collector
-to-Emitter
Saturation V
oltage, V
CE
(sat) -
-
mV
1.0
2
3
5
10
100
7
2
3
5
7
1000
2
3
5
7
2
5
7
3
2
100
3
10
--25
C
25
C
Ta=75
C
IC / IB=20
Base Current, IB -- mA
Ron -- IB
ON Resistance, Ron
--
f=1MHz
0.1
0.1
IT06092
7
5
3
2
10
7
5
3
2
7
5
3
2
1.0
100
3
2
5
7
3
2
5
7
1.0
10
OUT
IN
1k
1k
IB
Mounted on a glass-epoxy board(20
!
30
!
1.6mm)
50C02SS
No.7519-4/4
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be expor ted without obtaining the expor t license from the author ities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of May, 2003. Specifications and information herein are subject
to change without notice.
PS
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