FH102
Ordering number : EN5874
High-Frequency Low-Noise Amp,
Differential Amp Applications
NPN Epitaxial Planar Silicon Composite Transistor
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
51598TS (KOTO) TA-1130 No.5874-1/5
Package Dimensions
unit: mm
2149-MCP6
[FH102]
1 : Collector1
2 : Emitter1
3 : Collector2
4 : Emitter2
5 : Base2
6 : Base1
SANYO : MCP6
0
`
0.1
0.65
2.0
1.25
0.425
0.425
2.1
0.25
1
2
5
4
0.15
0.9
0.2
0.2
3
6
Specifications
Absolute Maximum Ratings
at Ta=25C
Parameter
Symbol
Conditions
Ratings
Unit
Collector-to-Base Voltage
VCBO
20
V
Collector-to-Emitter Voltage
VCEO
10
V
Emitter-to-Base Voltage
VEBO
2
V
Collector Current
IC
70
mA
Collector Dissipation
PC
Mounted on ceramic board
300
mW
(250mm
2
0.8mm), 1unit
Total Dissipation
PT
Mounted on ceramic board
500
mW
(250mm
2
0.8mm)
Junction Temperature
Tj
150
C
Storage Temperature
Tstg
55 to +150
C
Electrical Characteristics
at Ta=25C
Parameter
Symbol
Conditions
Ratings
min
typ
max
Unit
Collector Cutoff Current
ICBO
VCB=10V, IE=0
1.0
A
Emitter Cutoff Current
IEBO
VEB=1V, IC=0
10
A
DC Current Gain
hFE
VCE=5V, IC=20mA
90
200
DC Current Gain Ratio
hFE(small/large) VCE=5V, IC=20mA
0.7
0.95
Base-to-Emitter Voltage
VBE(small-large) VCE=5V, IC=20mA
1.0
mV
Difference
Gain-Bandwidth Product
fT
VCE=5V, IC=20mA
5
7
GHz
Output Capacitance
Cob
VCB=10V, f=1MHz
0.75
1.2
pF
Reverse Transfer Capacitance Cre
VCB=10V, f=1MHz
0.5
pF
Continued on next page.
Features
Composite type with 2 transistors contained in the MCP
package currently in use, improving the mounting
efficiency greatly.
The FH102 is formed with two chips, being equivalent to
the 2SC5226, placed in one package.
Optimal for differential amplification due to excellent
thermal equilibrium and pair capability.
FH102
No.5874-2/5
Continued from preceding page.
Parameter
Symbol
Conditions
Ratings
min
typ
max
Unit
Forward Transfer Gain
S2le
2
(1)
VCE=5V, IC=20mA, f=1GHz
9
12
dB
S2le
2
(2)
VCE=5V, IC=3mA, f=1GHz
8
dB
Noise Figure
NF
VCE=5V, IC=7mA, f=1GHz
1.0
1.8
dB
Note) The specifications shown above are for each individual transistor except the hFE (small/large) and VBE
(small-large) for which pair capability is also shown.
Marking : 102
Electrical Connection
B 1
B 2
E 2
C 1
E 1
C 2
1.0
7
100
100
7
10
1.0
10
100
5
7
5
3
2
3
2
7
1.0
0.1
10
1.0
10
5
7
5
2
3
2
7
0.1
1.0
5
7
5
3
2
3
2
7
0.1
1.0
5
7
5
3
2
3
2
7
5
3
2
2
7
5
3
2
7
5
3
7
5
3
2
7
5
3
2
2
10
7
7
5
3
2
7
5
3
2
2
3
1.0
0.1
10
7
7
5
3
2
7
5
3
2
2
3
V
CE
=5V
V
CE
=5V
D
C
C
u
r
r
e
n
t
G
a
i
n
,
h
F
E
O
u
t
p
u
t
C
a
p
a
c
i
t
a
n
c
e
,
C
o
b
p
F
R
e
v
e
r
s
e
T
r
a
n
s
f
e
r
C
a
p
a
c
i
t
a
n
c
e
,
C
r
e
p
F
Collector Current,I
C
mA
Collector Current,I
C
mA
Collector-to-Base Voltage, V
CB
V
Collector-to-Base Voltage, V
CB
V
h
FE
I
C
f
T
I
C
C ob
V
CB
C re
V
CB
f=1MHz
f=1MHz
G
a
i
n
-
B
a
n
d
w
i
d
t
h
P
r
o
d
u
c
t
,
f
T
G
H
z
FH102
No.5874-3/5
12
8
4
0
10
6
2
14
12
8
4
0
10
6
2
1.0
2
7
10
100
5
3
7
5
3
2
7
5
3
2
1.0
2
7
10
100
5
3
7
5
3
2
7
5
3
2
0
200
100
300
500
400
600
80
20
0
40
60
160
120
140
100
Ambient Temperature, Ta
C
A
l
l
o
w
a
b
l
e
P
o
w
e
r
D
i
s
s
i
p
a
t
i
o
n
,
P
D
m
W
V
CE
=5V
f=1GHz
NF
I
C
S 21
e
2
I
C
N
o
i
s
e
F
i
g
u
r
e
,
N
F
d
B
F
o
r
w
a
r
d
T
r
a
n
s
f
e
r
G
a
i
n
,
S
2
1
e
2
d
B
P
D
Ta
V
C
E
=5
V
V
C
E
=2
V
Collector Current,I
C
mA
Collector Current,I
C
mA
To
tal
dis
sip
atio
n
1 un
it
Mounted on ceramic board (250mm
2
0.8mm)
f=1GHz
FH102
No.5874-4/5
No products described or contained herein are intended for use in surgical implants, life-support systems,
aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and
the like, the failure of which may directly or indirectly cause injury, death or property loss.
Anyone purchasing any products described or contained herein for an above-mentioned use shall:
Accept full responsibility and indemnify and defend SANYO ELECTRIC CO., LTD., its affiliates,
subsidiaries and distributors and all their officers and employees, jointly and severally, against any
and all claims and litigation and all damages, cost and expenses associated with such use:
Not impose any responsibilty for any fault or negligence which may be cited in any such claim or
litigation on SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors or any of
their officers and employees jointly or severally.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guarant-
eed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees
are made or implied regarding its use or any infringements of intellectual property rights or other rights of
third parties.
This catalog provides information as of May, 1998. Specifications and information herein are subject to
change without notice.
S Parameters
0
30
60
90
120
150
30
60
90
120
150
180
0
30
60
90
120
150
30
60
90
120
150
180
j10
j25
j50
j100
j150
j200
j250
j10
j25
j50
j100
j150
j250
j200
0
j10
j25
j50
j100
j150
j200
j250
j10
j25
j50
j100
j150
j200
j250
0
10
25
50
100
150
250 500
V
CE
= 5V
I
C
= 20mA
V
CE
= 5V
I
C
= 20mA
V
CE
=5V
I
C
= 7mA
V
CE
=5V
I
C
= 7mA
V
CE
=2V
I
C
= 3mA
V
CE
=2V
I
C
= 3mA
2.0GHz
2.0GHz
2.0GHz
2.0GHz
0.1GHz
0.1GHz
0.1GHz
10
25
50
100
150
250 500
V
CE
= 5V
I
C
=7mA
V
CE
=5V
I
C
=20mA
V
CE
=2V
I
C
= 3mA
2.0GHz
2.0GHz
2.0GHz
0.1GHz
V
CE
= 5V
I
C
= 20mA
V
CE
=5V
I
C
= 7mA
V
CE
=2V
I
C
= 3mA
2.0GHz
2.0GHz
2.0GHz
0.1GHz
0.1GHz
0.1GHz
0.1GHz
4
8
12
16
20
0.04
0.08
0.12
0.16
0.2
f=100MHz, 200 to 2000MHz (200MHz step)
f=100MHz, 200 to 2000MHz (200MHz step)
f=100MHz, 200 to 2000MHz (200MHz step)
f=100MHz, 200 to 2000MHz (200MHz step)
FH102
No.5874-5/5
S Parameters
(Common emitter)
VCE=5V, IC=7mA, ZO=50
VCE=5V, IC=20mA, ZO=50
VCE=2V, IC=3mA, ZO=50
)
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