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Электронный компонент: FH104

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Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
NPN Epitaxial Planar Silicon Composite Transistor
High-Frequency Low-Noise Amplifier,
Differential Amplifier Applications
Ordering number:ENN6218
FH104
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
D1099TS (KOTO) TA-2353 No.62181/4
0 to 0.1
0.65
2.0
1.25
0.425
0.425
2.1
0.25
1
2
5
4
0.15
0.9
0.2
0.2
3
6
Specifications
Absolute Maximum Ratings
at Ta = 25C
Package Dimensions
unit:mm
2149
[FH104]
Features
Composite type with 2 transistors contained in the
MCP package currently in use, improving the
mounting efficiency greatly.
The FH104 is formed with two chips equivalent to
the 2SC4853 placed in one package.
Excellent in thermal equilibrium and pair capability.
Electrical Connection
C
C
Electrical Characteristics
at Ta = 25C
1 : Collector1
2 : Emitter1
3 : Collector2
4 : Emitter2
5 : Base2
6 : Base1
SANYO : MCP6
Continued on next page.
Note) The specifications shown above are for each individual transistor. However, the ratings for h
FE
(small/large) and V
BE
(large-small) indicate pair
characteristics.
Marking : 104
B2
B1
TR1
TR2
E2
C1
E1
C2
1 unit
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FH104
No.62182/4
Continued from preceding page.
0
14
12
10
8
6
4
2
0
7
6
5
4
3
2
1
0
S21e
2
, NF -- VCE
10
8
6
4
2
0
7
NF -- IC
f=1GHz
f=1GHz
IC=3mA
IC=1mA
NF
1mA
3mA
S21e
2
-- IC
2
1.0
7
0.1
7
5
3
2
5
5
7 0.1
2
3
5
7 1.0
2
3
5
7 10
2
2
3
2
2
3
5
7
1.0
10
5
14
12
10
8
6
4
2
2
3
5
7
1.0
2
3
5
7
Cob -- VCB
2
10
7
5
7
5
3
2
1.0
3
2
3
5
7
2
2
3
5
7
1.0
10
f T -- IC
3
2
100
7
5
3
2
10
7
5
5
0.1
1.0
2
3
2
3
5
7
10
2
3
5
7
7
5
hFE -- IC
V
CE
=2V
1V
V
CE
=2V
1V
V CE
=2V
1V
VCE=1V
2V
f=1MHz
f=1GHz
IT00311
IT00312
IT00313
IT00314
IT00315
IT00316
DC Current Gain,
h
FE
Collector Current, IC mA
Gain-Bandwidth Product,
f T
GHz
Collector Current, IC mA
Collector-to-Base Voltage, VCB -- V
Output Capacitance, Cob
p
F
Collector Current, IC mA
F
orw
ard
T
ransfer Gain,
S21e
2
d
B
S21e
2
d
B
S21e
2
Noise Figure, NF
d
B
Collector Current, IC mA
Collector-to-Emitter Voltage,VCE V
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FH104
No.62183/4
S parameter
160
100
80
60
120
140
150
40
20
0
0
160
140
120
100
80
60
40
20
PC -- Ta
IT00317
To
tal Dissipation
1 unit
Ambient Temperature, Ta
C
Collector Dissipation, P
C
mW
f=200MHz to 2000MHz(200MHz Step)
S11e
f=200MHz to 2000MHz(200MHz Step)
S21e
f=200MHz to 2000MHz(200MHz Step)
S12e
f=200MHz to 2000MHz(200MHz Step)
S22e
j50
j25
j10
0
10
--j10
--j25
--j50
--j100
--j150
--j200
--j250
j100
j150
j200
j250
100
150
250
V
CE =1V
IC=1mA
VCE=2V
IC=3mA
2.0GHz
0.2GHz
50
25
90
120
150
180
--150
--120
--90
--30
--60
0
60
30
8 10
6
4
2
0.2GHz
0.2GHz
2.0GHz
V CE
=1V
I C
=1mA
VCE=2V
IC=3mA
90
120
150
180
--150
--120
--90
--30
--60
0
60
30
0.05 0.10 0.15 0.20
0.2GHz
2.0GHz
V CE
=1V
I C
=1mA
V CE
=2V
I C
=3mA
j50
j25
j10
0
10
25
--j10
--j25
--j50
--j100
--j150
--j200
--j250
j100
j150
j200
j250
100
150
250
2.0GHz
0.2GHz
50
VCE=1V
IC=1mA
VCE=2V
IC=3mA
IT00318
IT00319
IT00320
IT00321
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be expor ted without obtaining the expor t license from the author ities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of December, 1999. Specifications and information herein are subject
to change without notice.
FH104
PS No.62184/4
S Parameters (Common emitter)
V
CE
=1V, I
C
=1mA, Z
O
=50
V
CE
=2V, I
C
=3mA, Z
O
=50
)
z
H
M
(
q
e
r
F
S
|
1
1 |
S 1
1
S
|
1
2 |
S 1
2
S
|
2
1 |
S 2
1
S
|
2
2 |
S 2
2
0
0
2
0
4
9
.
0
9
.
7
1
8
2
2
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6
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5
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7
7
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2
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2
1
5
1
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9
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5
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4
3
2
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0
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2
3
6
4
5
.
0
5
.
7
6
)
z
H
M
(
q
e
r
F
S
|
1
1 |
S 1
1
S
|
1
2 |
S 1
2
S
|
2
1 |
S 2
1
S
|
2
2 |
S 2
2
0
0
2
9
3
8
.
0
6
.
0
3
8
2
4
.
7
3
.
9
4
1
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5
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0
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1
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1
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0
3
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8
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1
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6
5
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8
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1
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1
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5
6
9
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1
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1
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5
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2
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1
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1
6