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Электронный компонент: LB1276

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2SJ645
HD 020610 No.0000-1/2
No.
2SJ645
370-0596 11
2.5V
Absolute Maximum Ratings / Ta=25
unit
VDSS
- 20
V
VGSS
10
V
DC
ID
- 8
A
IDP
PW 10
s, duty cycle 1%
- 32
A
PD
1
W
Tc=25
20
W
Tch
150
Tstg
- 55 150
Electrical Characteristics / Ta=25
min
typ
max
unit
V(BR)DSS ID= - 1mA, VGS=0
- 20
V
IDSS
VDS= - 20V, VGS=0
- 1
A
IGSS
VGS= 8V, VDS=0
10
A
VGS(off)
VDS= - 10V, ID= - 1mA
- 0.4
- 1.4
V
y
fs
VDS= - 10V, ID= - 4A
5.6
8
S
N 0 0 0 0
No. N 0 0 0 0
P MOS
00000


()
1 : Gate
2 : Drain
3 : Source
4 : Drain
SANYO : TP
5.0
6.5
0.85
0.7
0.6
1.5
5.5
7.0
0.8
1.6
7.5
0.5
1.2
2.3
0.5
1
2
3
4
2.3
2.3
2083B
(unit : mm)
1 : Gate
2 : Drain
3 : Source
4 : Drain
SANYO : TP-FA
2092B
(unit : mm)
6.5
2.3
0.5
1.5
5.5
0.8
7.0
1.2
2.5
5.0
0.85
0.5
1.2
0
0.2
2.3
2.3
0.6
1
2
4
3
2SJ645
HD 020610 No.0000-2/2












min
typ
max
unit
RDS(on)1
ID= - 4A, VGS= - 4.5V
55
72
m
RDS(on)2
ID= - 2A, VGS= - 2.5V
77
108
m
Ciss
VDS= - 10V, f=1MHz
680
pF
Coss
VDS= - 10V, f=1MHz
115
pF
Crss
VDS= - 10V, f=1MHz
80
pF
td(on)
12
ns
tr
120
ns
td(off)
55
ns
tf
65
ns
Qg
8.7
nC
Qgs
VDS= - 10V, VGS= - 4.5V, ID= - 8A
1.5
nC
Qgd
1.8
nC
VSD
IS= - 8A, VGS=0
- 1.0
- 1.5
V
PW=10ms
D.C.1%
P.G
50W
G
S
D
ID= --4A
RL=2.5W
VDD= --10V
VOUT
2SJ645
VIN
0V
--4.5V
VIN