Ordering number : ENN
*
6624
41902RM (OT) No. 6624-1/9
Overview
The LC35W1000BM and LC35W1000BTS-70U/10U are
asynchronous silicon gate CMOS static RAM devices with
a 131,072-word by 8-bit structure. They provide two chip
enable pins (CE1 and CE2) for device select/deselect
control and one output enable pin (OE) for output control.
They feature high speed, low power, and a wide operating
temperature range.This makes them optimal for use in
systems that require high speed, low power, and battery
backup. They also support easy memory expansion.
Features
Low-voltage operation: 2.7 to 3.6 V
Wide operating temperature range: 40 to +85C
Access time:
70 ns (maximum):
LC35W1000BM and LC35W1000BTS-70U.
100 ns (maximum):
LC35W1000BM and LC35W1000BTS-10U.
Low current drain
Standby mode: 0.1 A (typical*) at Ta = +25C
10.0 A (maximum) at Ta = 40 to +70C
20.0 A (maximum) at Ta = 40 to +85C
Data retention voltage: 2.0 to 3.6 V
No clock required (fully static circuits)
Input/output shared function pins, 3-state output pins
Package
32-pin SOP (525 mil) plastic package:
LC35W1000BM
32-pin TSOP (8
14 mm) plastic package (Normal):
LC35W1000BTS
Package Dimensions
unit: mm
3205A-SOP32
unit: mm
3228A-TSOP32DA
1
0.2
3.1max
14.0
0.8
16
17
32
20.5
11.2
0.4
1.27
0.15
(0.73)
(2.7)
Preliminary
SANYO: SOP32
[LC35W1000BM-70U/10U]
0.5
1
16
32
17
1.2max
8.0
0.08
12.4
14.0
0.5
0.2
0.125
(0.25)
(1.0)
SANYO: TSOP32DA
[LC35W1000BTS-70U/10U]
LC35W1000BM, BTS-70U/10U
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Asynchronous Silicon Gate
1M (131,072 words
8 bits) SRAM
CMOS IC
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
Block Diagram
No. 6624-3/9
LC35W1000BM, BTS-70U/10U
Control
circuit
Data control circuit
Output
buffer
Input
data
buffer
Memory cell array
Ra
w Decoder
Address b
uff
er
Pin Functions
A0 to A16
Address input
WE
Ready/write control input
OE
Output enable input
CE, CE2
Chip enable input
I/O1 to I/O8
Data I/O
V
CC
, GND
Power supply, ground
Function Table
Note: X indicates H or L.
*
: For pulse widths under 30 ns: 2.0 V
Note: This chip may be destroyed if any stress in excess of the absolute maximum ratings is applied.
Mode
CE1
CE2
OE
WE
I/O
Supply current
Ready cycle
L
H
L
H
Data output
I
CCA
Write cycle
L
H
X
L
Data input
I
CCA
Output disable
L
H
H
H
High impedance
I
CCA
Unselected
H
X
X
X
High impedance
I
CCS
X
L
X
X
High impedance
I
CCS
Parameter
Symbol
Conditions
Ratings
Unit
Maximum supply voltage
V
CC
max
4.6
V
Input pin voltage
V
IN
0.3
*
to V
CC
+ 0.3
V
I/O pin voltage
V
I/O
0.3 to V
CC
+ 0.3
V
Operating temperature
Topr
40 to +85
C
Storage temperature
Tstg
55 to +125
C
Specifications
Maximum Ratings
at Ta = 25C
No. 6624-4/9
LC35W1000BM, BTS-70U/10U
Parameter
Symbol
Conditions
Ratings
Unit
min
typ
max
Supply volgate
V
CC
2.7
3.3
3.6
V
High-level input voltage
V
IH
0.8V
CC
V
CC
+ 0.3
V
Low-level input voltage
V
IL
0.3
*
0.2V
CC
V
DC Allowable Operating Range
at Ta = 40 to +85C
Note:
*
The minimum value is 3.0 V for pulse width under 50 ns.
Note:
*
Reference values when V
CC
= 3.0 V and Ta = 25C.
Parameter
Symbol
Conditions
Ratings
Unit
min
typ
max
Input leakage current
I
LI
V
IN
= 0 to V
CC
1.0
+1.0
A
I/O leakage current
I
LO
V
CE1
= V
IH
or V
CE2
= V
IL
or V
OE
= V
IH
or
1.0
+1.0
A
V
WE
= V
IL
, V
I/O
= 0 to V
CC
Outpu high-level voltage
V
OH1
V
OH1
= 2.0 mA
V
CC
0.4
V
V
OH2
V
OH2
= 100 A
V
CC
0.1
V
Outpu low-level voltage
V
OL1
V
OL1
= 2.0 mA
0.4
V
V
OL2
V
OL2
= 100 A
0.1
V
Operating supply current
I
CCA2
V
CE1
= V
IL
, V
CE2
= V
IH
, I
I/O
= 0 mA, V
IN
= V
IH
or V
IL
1.2
mA
(CMOS inputs)
V
CE1
= V
IL
, V
CE2
= V
IH
,
min cycle
70 ns
25
I
CCA3
I
I/O
= 0 mA, V
IN
= V
IH
or V
IL
,
100 ns
20
mA
DUTY100%
1 s cycle
2
Standby mode supply current
V
CE2
0.2 V or
Ta
85C
20
(V
CC
0.2 V/0.2 V inputs)
I
CCS1
(V
CE1
V
CC
0.2 V,
Ta
70C
10
A
V
CE2
V
CC
0.2 V)
Ta
25C
0.1
(CMOS inputs)
I
CCS2
V
CE1
= V
IH
or V
CE2
= V
IL
, V
IN
= 0 to V
CC
0.4
mA
DC Electrical Characteristics
at Ta = 40 to +85C, V
CC
= 2.7 to 3.6 V
Note: These parameters are not measured for all devices, but are sampled values.
Parameter
Symbol
Conditions
Ratings
Unit
min
typ
max
Input capacitance
C
IN
V
IN
= 0 V
6
10
pF
I/O capacitance
C
I/O
V
I/O
= 0 V
6
10
pF
I/O Capacitances
at Ta = 25C, f = 1 MHz
AC Electrical Characteristics
at Ta = 40 to +85C, V
CC
= 2.7 to 3.6 V
AC test conditions
Input pulse voltage levels: V
IL
= 0.2 V
CC
, V
IH
= 0.8 V
CC
Input rise and fall times: 5 ns
Input and output timing leves: 1/2 V
CC
Output load: 30 pF (including the jig capacitance)
No. 6624-5/9
LC35W1000BM, BTS-70U/10U
Read cycle
Parameter
Symbol
70U
10U
min
max
min
max
Unit
Read cyle time
t
RC
70
100
ns
Address access time
t
AA
70
100
ns
CE1 access time
t
CA1
70
100
ns
CE2 access time
t
CA2
70
100
ns
OE access time
t
OA
50
50
ns
Output hold time
t
OH
10
10
ns
CE1 output enable time
t
COE1
10
10
ns
CE2 output enable time
t
COE2
10
10
ns
OE output enable time
t
OCE
5
5
ns
CE1 output disable time
t
COD1
40
35
ns
CE2 output disable time
t
COD2
40
35
ns
OE output disable time
t
OOD
35
30
ns
Write cycle
Parameter
Symbol
70U
10U
min
max
min
max
Unit
Write cyle time
t
WC
70
100
ns
Address setup time
t
AS
0
0
ns
Write pulse width
tWP
50
70
ns
CE1 setup time
t
CW1
60
90
ns
CE2 setup time
t
CW2
60
90
ns
Write recovery time
t
WR
0
0
ns
CE1 write recovery time
t
WR1
0
0
ns
CE2 write recovery time
t
WR2
0
0
ns
Data setup time
t
DS
40
50
ns
Data hold time
t
DH
0
0
ns
CE1 data hold time
t
DH1
0
0
ns
CE2 data hold time
t
DH2
0
0
ns
WE output enable time
t
WOE
5
5
ns
WE output disable time
t
WOD
35
30
ns
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