VEC2803
No.8202-1/6
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : ENN8202
VEC2803
MOSFET : P-Channel Silicon MOSFET
SBD : Schottky Barrier Diode
General-Purpose Switching Device
Applications
Features
DC/DC converter.
Composite type with a P-Channel Sillicon MOSFET and a Schottky Barrier Diode contained in one package
facilitating high-density mounting.
[MOSFET]
Low ON-resistance.
4V drive.
[SBD]
Short reverse recovery time.
Low forward voltage.
Specifications
Absolute Maximum Ratings
at Ta=25
C
Parameter
Symbol
Conditions
Ratings
Unit
[MOSFET]
Drain-to-Source Voltage
VDSS
--30
V
Gate-to-Source Voltage
VGSS
20
V
Drain Current (DC)
ID
--3
A
Drain Current (Pulse)
IDP
PW
10
s, duty cycle
1%
--12
A
Allowable Power Dissipation
PD
Mounted on a ceramic board (900mm
2
!
0.8mm) 1unit
0.9
W
Channel Temperature
Tch
150
C
Storage Temperature
Tstg
--55 to +125
C
[SBD]
Repetitive Peak Reverse Voltage
VRRM
30
V
Nonrepetitive Peak Reverse Surge Voltage
VRSM
35
V
Average Output Current
IO
1
A
Surge Forward Current
IFSM
50Hz sine wave, 1 cycle
5
A
Junction Temperature
Tj
--55 to +125
C
Storage Temperature
Tstg
--55 to +125
C
Marking : BN
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
12505PE TS IM TB-00001017
VEC2803
No.8202-2/6
Electrical Characteristics
at Ta=25
C
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
[MOSFET]
Drain-to-Source Breakdown Voltage
V(BR)DSS
ID=--1mA, VGS=0
--30
V
Zero-Gate Voltage Drain Current
IDSS
VDS=--30V, VGS=0
--1
A
Gate-to-Source Leakage Current
IGSS
VGS=
16V, VDS=0
10
A
Cutoff Voltage
VGS(off)
VDS=--10V, ID=--1mA
--1.0
--2.4
V
Forward Transfer Admittance
yfs
VDS=--10V, ID=--1.5A
2.0
3.4
S
Static Drain-to-Source On-State Resistance
RDS(on)1
ID=--1.5A, VGS=--10V
65
86
m
RDS(on)2
ID=--0.7A, VGS=--4V
117
168
m
Input Capacitance
Ciss
VDS=--10V, f=1MHz
510
pF
Output Capacitance
Coss
VDS=--10V, f=1MHz
115
pF
Reverse Transfer Capacitance
Crss
VDS=--10V, f=1MHz
78
pF
Turn-ON Delay Time
td(on)
See specified Test Circuit.
11
ns
Rise Time
tr
See specified Test Circuit.
17
ns
Turn-OFF Delay Time
td(off)
See specified Test Circuit.
53
ns
Fall Time
tf
See specified Test Circuit.
35
ns
Total Gate Charge
Qg
VDS=--10V, VGS=--10V, ID=--3A
11
nC
Gate-to-Source Charge
Qgs
VDS=--10V, VGS=--10V, ID=--3A
2.4
nC
Gate-to-Drain "Miller" Charge
Qgd
VDS=--10V, VGS=--10V, ID=--3A
1.7
nC
Diode Forward Voltage
VSD
IS=--3A, VGS=0
--0.87
--1.2
V
[SBD]
Reverse Voltage
VR
IR=0.5mA
30
V
Forward Voltage
VF1
IF=0.5A
0.35
0.39
V
VF2
IF=1A
0.4
0.45
V
Reverse Current
IR
VR=15V
360
A
Interterminal Capacitance
C
VR=10V, f=1MHz
27
pF
Reverse Recovery Time
trr
IF=IR=100mA, See specified Test Circuit.
10
ns
Package Dimensions
Electrical Connection
unit : mm
2241
1 : Anode
2 : No Contact
3 : Source
4 : Gate
5 : Drain
6 : Drain
7 : Cathode
8 : Cathode
SANYO : VEC8
2.9
0.65
2.8
0.25
0.25
2.3
0.75
0.07
0.3
1
2
3
4
8
7
6 5
0.15
8
7
6
5
1
2
3
4
1 : Anode
2 : No Contact
3 : Source
4 : Gate
5 : Drain
6 : Drain
7 : Cathode
8 : Cathode
Top view
VEC2803
No.8202-3/6
Switching Time Test Circuit
trr Test Circuit
[MOSFET]
[SBD]
PW=10
s
D.C.
1%
P.G
50
G
S
D
ID= --1.5A
RL=10
VDD= --15V
VOUT
VEC2803
VIN
0V
--10V
VIN
Duty
10%
50
100
10
--5V
trr
100mA
100mA
10mA
10
s
[MOSFET]
[MOSFET]
[MOSFET]
[MOSFET]
RDS(on) -- VGS
RDS(on) -- Ta
Static Drain-to-Source
On-State Resistance, R
DS
(on) -
-
m
Static Drain-to-Source
On-State Resistance, R
DS
(on) -
-
m
Gate-to-Source Voltage, VGS -- V
Ambient Temperature, Ta --
C
ID -- VDS
ID -- VGS
Drain-to-Source Voltage, VDS -- V
Drain Current, I
D
--
A
Gate-to-Source Voltage, VGS -- V
Drain Current, I
D
--
A
0
0
--0.5
--1.0
--2.0
--2.5
--3.0
--3.5
--4.0
--0.2
--1.5
--0.4
--0.1
--0.3
--0.5
--0.7
--0.9
--0.6
--0.8
--1.0
--0.5
--1.0
--2.5
0
--1.5
--2.0
--3.0
0
--1
--2
--3
--4
--5
IT07767
IT07768
VDS= --10V
VGS= --2.5V
--4.0V
--10V
--25
C
25
C
T
a=75
C
160
220
180
200
80
140
100
40
60
120
IT07769
--2
--4
--6
--12
0
--8
--10
--
8.0V
--
6.0V
--
5.0V
--0.7A
Ta=25
C
ID= --1.5A
--75
--50
--25
0
25
50
75
125
100
200
220
20
160
140
120
180
100
40
60
80
175
150
IT09169
ID=
--1.5
A, VGS
= --10V
I D
= --0.7
A, V
GS
= --
4V
VEC2803
No.8202-4/6
3
--10
2
3
5
7
2
3
5
7
2
3
5
7
2
--1.0
--0.1
--0.01
--1.0
2 3
5 7
--10
--0.01
--0.1
2 3
5 7
2 3
3
5
5
7
2
IT09170
100ms
DC operation
1ms
10ms
<10
s
Operation in this
area is limited by RDS(on).
0
0
20
40
0.6
1.0
0.9
0.4
0.2
0.8
60
80
100
120
140
160
IT09171
ID= --3A
IDP= --12A
[MOSFET]
[MOSFET]
[MOSFET]
[MOSFET]
[MOSFET]
[MOSFET]
[MOSFET]
y
fs
-- ID
SW Time -- ID
Ciss, Coss, Crss -- VDS
IF -- VSD
Drain Current, ID -- A
Forward T
ransfer
Admittance,
y
fs
-
-
S
Diode Forward Voltage, VSD -- V
Forward Current, I
F
--
A
Drain Current, ID -- A
Switching
T
ime, SW
T
ime -
-
ns
Drain-to-Source Voltage, VDS -- V
Ciss, Coss, Crss -
-
pF
IT07771
IT07773
IT07772
--0.001
--0.01
--0.1
--10
--1.0
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
0
--5
--10
--15
--20
--25
--30
100
1000
7
5
3
2
7
5
3
2
IT07774
T
a=75
C
25
C
--25
C
VGS=0
--0.5
--0.7
--1.1
--1.0
--0.9
--0.4
--0.3
--0.6
--0.8
f=1MHz
--0.1
1.0
--1.0
7
5
5
3
7
2
3
10
7
5
3
2
7
5
3
2
VDS= --10V
--0.1
--1.0
2
3
5
7
2
3
5
7
1.0
10
100
7
5
3
2
7
5
3
2
2
75
C
Ta= -
-25
C
VDD= --15V
VGS= --10V
td(on)
td(off)
t r
tf
25
C
Ciss
Crss
Coss
PD -- Ta
Ambient Temperature, Ta --
C
Mounted on a ceramic board (900mm
2
!
0.8mm) 1unit
Allowable Power Dissipation, P
D
--
W
VGS -- Qg
A S O
Total Gate Charge, Qg -- nC
Gate-to-Source V
oltage, V
GS
--
V
Drain-to-Source Voltage, VDS -- V
Drain Current, I
D
-
-
A
0
4
8
14
10
12
2
6
0
--10
--6
--8
--9
--7
--4
--5
--2
--1
--3
IT07775
VDS= --10V
ID= --3A
Ta=25
C
Single pulse
Mounted on a ceramic board (900mm
2
!0.8mm)
VEC2803
No.8202-5/6
[SBD]
[SBD]
[SBD]
[SBD]
[SBD]
IT08216
20
0
0.4
0.2
0.6
1.0
0
0.8
1.2
40
60
80
100
120
140
(1)
(2) (4) (3)
0
0.1
IT07944
IF -- VF
Forward Current, I
F
--
A
Forward Voltage, VF -- V
10
0
40
IT07945
IR -- VR
Reverse Current, I
R
--
A
Reverse Voltage, VR -- V
0.001
2
3
5
7
0.01
2
3
5
7
0.1
2
3
5
7
1.0
2
3
5
7
10
0.2
0.3
0.4
0.5
1.0
2
3
5
7
3
2
10
2
3
5
7
100
2
3
5
7
1000
2
3
5
7
10000
20
30
Average Forward Current, IO -- A
Tc -- IO
Case
T
emperature,
T
c
-
-
C
125
C
100
C
75
C
50
C
25
C
T
a= -
-25
C
Ta=125
C
100
C
75
C
50
C
25
C
--25
C
(1)Rectangular wave
=60
(2)Rectangular wave
=120
(3)Rectangular wave
=180
(4)Sine wave
=180
IT08214
0
0
0.4
0.4
0.3
0.2
0.6
0.5
0.1
0.8
1.2
0.2
0.6
1.0
(1)
(2) (4) (3)
180
360
360
PF(AV) -- IO
Average Forward Current, IO -- A
A
verage Forward Power Dissipation, P
F
(A
V)
-
-
W
Rectangular
wave
(1)Rectangular wave
=60
(2)Rectangular wave
=120
(3)Rectangular wave
=180
(4)Sine wave
=180
Sine wave
(1)
(2) (4) (3)
1.0
0.1
10
2
2
3
3
5
7
100
7
2
3
5
10
7
2
3
5
100
7
2
3
5
Reverse Voltage, VR -- V
C -- VR
Interterminal Capacitance, C -
-
pF
IT07948
f=1MHz
VEC2803
No.8202-6/6
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of January, 2005. Specifications and information herein are subject
to change without notice.
PS
Note on usage : Since the VEC2803 is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
PDF 
ZIP