VEC2901
No.8198-1/6
Features
Composite type with an NPN transistor and N-ch MOS-FET contained in one package facilitating high-density mounting.
Ultrasmall package permitting applied sets to be made small and slim.
Specifications
Absolute Maximum Ratings
at Ta=25
C
Parameter
Symbol
Conditions
Ratings
Unit
[TR]
Collector-to-Base Voltage
VCBO
100
V
Collector-to-Emitter Voltage
VCEO
50
V
Emitter-to-Base Voltage
VEBO
6
V
Collector Current
IC
5
A
Collector Current (Pulse)
ICP
8
A
Collector Dissipation
PC
Mounted on a ceramic board (900mm
2
!
0.8mm) 1unit
1.1
W
Junction Temperature
Tj
150
C
Storage Temperature
Tstg
--55 to +150
C
[FET]
Drain-to-Source Voltage
VDSS
30
V
Gate-to-Source Voltage
VGSS
10
V
Drain Current
ID
150
mA
Drain Current (Pulse)
IDP
PW
10
s, duty cycle
1%
600
mA
Allowable Power Dissipation
PD
0.25
W
Channel Temperature
Tch
150
C
Storage Temperature
Tstg
--55 to +150
C
Electrical Characteristics
at Ta=25
C
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
[TR]
Collector Cutoff Current
ICBO
VCB=40V, IE=0
100
nA
Emitter Cutoff Current
IEBO
VEB=4V, IC=0
100
nA
DC Current Gain
hFE
VCE=2V, IC=500mA
250
400
Gain-Bandwidth Product
fT
VCE=10V, IC=500mA
330
MHz
Output Capacitance
Cob
VCB=10V, f=1MHz
26
pF
Collector-to-Emitter Saturation Voltage
VCE(sat)1
IC=1.6A, IB=53mA
55
110
mV
VCE(sat)2
IC=2A, IB=40mA
75
150
mV
Marking : AA
Continued on next page.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : ENN8198
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
12505EA TS IM TB-00001130
VEC2901
TR : NPN Epitaxial Planar Silicon Transistor
FET : N-Channel Silicon MOSFET
Switching, Flash Applications
VEC2901
No.8198-2/6
Continued from preceding page.
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Base-to-Emitter Saturation Voltage
VBE(sat)
IC=2A, IB=40mA
0.9
1.2
V
Collector-to-Base Breakdown Voltage
V(BR)CBO
IC=10
A, IE=0
100
V
Collector-to-Emitter Breakdown Voltage
V(BR)CEO
IC=1mA, RBE=
50
V
Emitter-to-Base Breakdown Voltage
V(BR)EBO
IE=10
A, IC=0
6
V
Turn-ON Time
ton
See specified Test Circuit.
30
ns
Storage Time
tstg
See specified Test Circuit.
360
ns
Fall Time
tf
See specified Test Circuit.
22
ns
[FET]
Drain-to-Source Breakdown Voltage
V(BR)DSS
ID=1mA, VGS=0
30
V
Zero-Gate Voltage Drain Current
IDSS
VDS=30V, VGS=0
10
A
Gate-to-Source Leakage Current
IGSS
VGS=
8V, VDS=0
10
A
Cutoff Voltage
VGS(off)
VDS=10V, ID=100
A
0.4
1.3
V
Forward Transfer Admittance
yfs
VDS=10V, ID=80mA
0.15
0.22
S
RDS(on)1
ID=80mA, VGS=4V
2.9
3.7
Static Drain-to-Source On-State Resistance
RDS(on)2
ID=40mA, VGS=2.5V
3.7
5.2
RDS(on)3
ID=10mA, VGS=1.5V
6.4
12.8
Input Capacitance
Ciss
VDS=10V, f=1MHz
7.0
pF
Output Capacitance
Coss
VDS=10V, f=1MHz
5.9
pF
Reverse Transfer Capacitance
Crss
VDS=10V, f=1MHz
2.3
pF
Turn-ON Delay Time
td(on)
See specified Test Circuit.
19
ns
Rise Time
tr
See specified Test Circuit.
65
ns
Turn-OFF Delay Time
td(off)
See specified Test Circuit.
155
ns
Fall Time
tf
See specified Test Circuit.
120
ns
Total Gate Charge
Qg
VDS=10V, VGS=10V, ID=150mA
1.58
nC
Gate-to-Source Charge
Qgs
VDS=10V, VGS=10V, ID=150mA
0.26
nC
Gate-to-Drain "Miller" Charge
Qgd
VDS=10V, VGS=10V, ID=150mA
0.31
nC
Diode Forward Voltage
VSD
IS=150mA, VGS=0
0.87
1.2
V
Package Dimensions
Electrical Connection
unit : mm
2240
1 : Base
2 : Emitter
3 : Gate
4 : Drain
5 : Source
6 : Collector
7 : Collector
8 : Collector
SANYO : VEC8
2.9
0.65
2.8
0.25
0.25
2.3
0.75
0.07
0.3
1
2
3
4
8
7
6 5
0.15
1
2
3
4
8
7
6
5
1 : Base
2 : Emitter
3 : Gate
4 : Drain
5 : Source
6 : Collector
7 : Collector
8 : Collector
Top view
VEC2901
No.8198-3/6
PW=10
s
D.C.
1%
P.G
50
G
S
D
ID=80mA
RL=187.5
VDD=15V
VOUT
VIN
4V
0V
VIN
+
+
50
INPUT
OUTPUT
VR
RB
RL
VCC=25V
100
F
470
F
VBE= --5V
PW=20
s
IB1
IB2
D.C.
1%
IC= --20IB1= 20IB2=2.5A
Switching Time Test Circuit
Switching TimeII Test Circuit
IC -- VCE
IC -- VBE
hFE -- IC
Collector-to-Emitter Voltage, VCE -- V
Collector Current, I
C
-
-
A
Base-to-Emitter Voltage, VBE -- V
Collector Current, I
C
-
-
A
Collector Current, IC -- A
DC Current Gain, h
FE
5.0
4.5
4.0
3.0
3.5
2.0
2.5
1.0
1.5
0.5
0
0.4
0
0.8
0.2
0.6
1.0
IT08135
10mA
15mA
20mA
30mA
40mA
IB=0
8mA
2mA
4mA
6mA
6
3
4
1
2
5
0
0
0.2
0.4
0.6
0.8
1.0
IT08136
Ta=75
C
25
C
--25
C
7
100
5
3
2
0.01
3
2
5
0.1
7
3
2
5
7
5
7
2
3
1.0
VCE=2V
IT08137
60mA
50mA
VCE=2V
Ta= --25
C
75
C
IT08138
IT08139
0.01
0.1
2
3
5
7
2
3
5
7
7
2
3
5
1.0
IT08140
1.0
3
25
C
2
7
5
IC / IB=50
T
a=75
C
25
C
--25
C
VCE(sat) -- IC
VBE(sat) -- IC
Collector Current, IC -- A
Collector
-to-Emitter
Saturation V
oltage, V
CE
(sat) -
-
V
VCE(sat) -- IC
Collector Current, IC -- A
Collector
-to-Emitter
Saturation V
oltage, V
CE
(sat) -
-
V
Collector Current, IC -- A
Base-to-Emitter
Saturation V
oltage, V
BE
(sat) -
-
V
0.1
2
3
5
7
5
7
2
3
0.01
0.01
0.1
2
3
5
7
2
3
5
7
7
2
3
5
1.0
Ta=75
C
--25
C
IC / IB=20
25
C
0.1
2
3
5
7
2
3
0.01
0.01
0.1
2
3
5
7
2
3
5
7
7
2
3
5
1.0
Ta=75
C
--25
C
IC / IB=50
25
C
[TR]
[TR]
[TR]
[TR]
[TR]
[TR]
VEC2901
No.8198-4/6
Cob -- VCB
A S O
PC -- Ta
Collector-to-Base Voltage, VCB -- V
Output Capacitance, Cob
-
-
pF
Collector-to-Emitter Voltage, VCE -- V
Collector Current, I
C
-
-
A
Collector Dissipation, P
C
--
W
Ambient Temperature, Ta --
C
0.1
1.0
2
3
5
7
2
3
5
7
7
2
3
5
10
100
10
3
2
2
7
5
IT08141
0.01
0.1
2
3
5
7
2
3
5
7
7
2
3
5
1.0
100
10
3
2
7
5
1000
3
2
7
5
IT08142
f=1MHz
IT08143
2
3
5
7
2
2
3
5
7
2
3
5
7
1.0
10
0.1
0.01
2
3
5
7
0.1
1.0
2
3
5
7 10
7 100
2
3
5
100ms
DC operation
100
s
500
s
10ms
ICP=8A
0
0.6
0.8
1.0
1.2
1.1
0.4
0.2
20
0
60
40
80
100
140
120
160
IT08144
1ms
VCE=2V
IC=5A
f T -- IC
Gain-Bandwidth Product, f
T
-
-
MHz
Collector Current, IC -- A
<
10
s
Mounted on a ceramic board (900mm
2
!
0.8mm)
Ta=25
C
Single Pulse
Mounted on a ceramic board (900mm
2
!0.8mm)
[TR]
[TR]
[TR]
[TR]
[FET]
[FET]
[FET]
[FET]
0
0
0.02
0.2
0.06
0.04
0.08
0.4
0.10
0.12
0.14
0.16
0.6
0.8
1.0
VGS=1.5V
2.0V
2.5V
4.0V
3.5V
3.0V
6.0V
0
0
1
2
1
3
4
2
5
6
3
4
5
6
7
8
9
10
7
8
9
10
Ta=25
C
0.01
0.1
2
3
5
7
2
3
5
10
7
5
3
2
1.0
0
0
0.5
1.0
1.5
2.0
0.15
0.10
0.05
0.30
0.25
0.20
2.5
3.0
VDS=10V
T
a= -
-25
C
25
C
75
C
25
C
--25
C
Ta=75
C
IT00029
IT00030
IT00031
IT00032
VGS=4V
ID=40mA
80mA
ID -- VDS
ID -- VGS
RDS(on) -- VGS
RDS(on) -- ID
Static Drain-to-Source
On-State Resistance, R
DS
(on) -
-
Static Drain-to-Source
On-State Resistance, R
DS
(on) -
-
Drain-to-Source Voltage, VDS -- V
Drain Current, I
D
-
-
A
Gate-to-Source Voltage, VGS -- V
Drain Current, I
D
-
-
A
Gate-to-Source Voltage, VGS -- V
Drain Current, ID -- A
Ta=75
C
--25
C
25
C
VEC2901
No.8198-5/6
0.01
0.1
2
3
5
7
2
3
5
10
1.0
7
5
3
2
VGS=2.5V
0.001
1.0
0.01
2
3
5
7
2
3
100
10
7
5
3
2
7
5
3
2
VGS=1.5V
Ta=75
C
25
C
--25
C
--25
C
25
C
Ta=75
C
IT00033
IT00034
--60
0
--40
--20
1
0
20
2
40
60
3
4
5
6
7
80
100
120
140
160
0.01
0.01
0.1
2
3
5
7
2
3
5
0.1
7
5
3
2
7
5
3
2
1.0
VDS=10V
75
C
25
C
Ta= -
-25
C
IT00035
IT00036
y
fs
-- ID
Drain Current, ID -- A
Forward T
ransfer
Admittance,
y
fs
-
-
S
RDS(on) -- Ta
Static Drain-to-Source
On-State Resistance, R
DS
(on) -
-
Ambient Temperature, Ta --
C
RDS(on) -- ID
Static Drain-to-Source
On-State Resistance, R
DS
(on) -
-
Drain Current, ID -- A
RDS(on) -- ID
Static Drain-to-Source
On-State Resistance, R
DS
(on) -
-
Drain Current, ID -- A
I D
=40mA, V
GS
=2.5V
ID=80mA, V
GS
=4.0V
0.01
0.6
0.5
0.8
0.7
0.9
1.0
1.1
1.2
0.1
5
3
2
7
5
3
2
VGS=0
--25
C
25
C
T
a=75
C
IT00037
IF -- VSD
Diode Forward Voltage, VSD -- V
Forward Current, I
F
-
-
A
0.01
10
0.1
2
3
5
7
2
1000
100
7
5
3
2
7
5
3
2
VDD=15V
VGS=4V
td(on)
tr
tf
td(off)
IT00038
Drain Current, ID -- A
SW Time -- ID
Switching
T
ime, SW
T
ime -
-
ns
0
2
4
6
8
10
12
14
16
18
20
1.0
10
7
5
3
2
7
5
3
2
100
Ciss
Coss
Crss
f=1MHz
IT00039
Ciss, Coss, Crss -- VDS
Drain-to-Source Voltage, VDS -- V
Ciss, Coss, Crss -
-
pF
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0
1
2
3
4
5
6
7
8
9
10
VDS=10V
ID=150mA
IT00040
VGS -- Qg
Total Gate Charge, Qg -- nC
Gate-to-Source V
oltage, V
GS
-
-
V
[FET]
[FET]
[FET]
[FET]
[FET]
[FET]
[FET]
[FET]
VEC2901
No.8198-6/6
PS
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of January, 2005. Specifications and information herein are subject
to change without notice.
0
20
40
60
100
120
140
0
80
0.20
0.25
0.30
0.10
0.05
0.15
160
Amibient Temperature, Ta --
C
PD -- Ta
Allowable Power Dissipation, P
D
-
-
W
IT01962
[FET]
Note on usage : Since the VEC2901 includes MOSFET, please avoid using this device in the vicinity
of highly charged objects.
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