T
stg
Storage Temperature Range
-55 to +175 C
Tj
Max junction temperature
+150C
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Reverse Voltage
Peak Reverse Voltage
Average Half Wave Rectified
T
amb
25 C
Forward Current
T
amb
=
100 C
D.C Forward Current
Repetitive Peak Forward Current
Non-Repetitive Peak Forward Current (half cycle surge , 60 c.p.s)
200
200
1.0
0.75
1
10
30
1N4003CSM4
MECHANICAL DATA
Dimensions in mm (inches)
1
2
3
4
5.59 0.13
(0.22 0.005)
0.23
(0.009)
rad.
1.02 0.20
(0.04 0.008)
2.03 0.20
(0.08 0.008)
1.40 0.15
(0.055 0.006)
0.25 0.03
(0.01 0.001)
0.23
(0.009)
min.
1.
27 0.
05
(
0
.
0
5 0.
002
)
3.
81 0.
13
(
0
.
15 0.
00
5)
0.
64 0.
08
(
0
.
025 0.
003)
GENERAL PURPOSE
SILICON RECTIFIER DIODE
Prelim. 6/00
LAB
SEME
V
F
Forward Voltage Drop
V
F(AV)
Full-Cycle average forward
voltage drop
I
R
Reverse Current
I
R(AV)
Full cycle average reverse current
I
F
= 1A
I
F(AV)
= 1A
V
R
= 50 V , T
amb
= 25 C
V
R
= 50 V , T
amb
= 100 C
V
RRM
= 50 V , T
amb
= 75 C
1.1
0.8
10
50
30
V
V
m
A
m
A
CHARACTERISTICS (T
case
= 25C unless otherwise stated)
ABSOLUTE MAXIMUM RATINGS (T
case
= 25C unless otherwise stated)
V
R
V
RRM
I
F(AV)
I
F
I
FRM
I
FSM
General Purpose Rectifier Diode
In Hermetic Ceramic Surface Mount Package
For High Reliability Applications
V
V
A
A
A
A
PAD 1 -- Cathode
PAD 2 -- No Connection
PAD 3 -- No Connection
PAD 4 -- Anode
(LCC3 PACKAGE)
Underside View
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Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
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