Prelim. 4/96
LAB
SEME
2N2060A
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
DUAL AMPLIFIER
TRANSISTOR
Small Signal Dual Transistor
in a TO77 Hermetic Package.
V
CEO
Collector Emitter Voltage
V
CER
Collector Emitter Voltage
V
CBO
Collector Base Voltage
V
EBO
Emitter Base Voltage
I
C
Collector Current
T
J
, T
stg
Operating and Storage Junction Temperature Range
P
D
Total Device Dissipation
@ T
A
= 25C
Derate above 25C
P
D
Total Device Dissipation
@ T
C
= 25C
Derate above 25C
60V
80V
100V
7V
500mA
65 to +200C
Per Side
Total Device
0.5W
0.6W
2.86mW/C
3.43mW/C
1.5W
3.0W
8.61mW/C
17.2mW/C
MECHANICAL DATA
Dimensions in mm (inches)
TO77 METAL PACKAGE
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25C unless otherwise stated)
PIN 1 Collector
PIN 2 Base
PIN 3 Emitter
PIN 4 Emitter
PIN 5 Base
PIN 6 Collector
1.02
(0.040)
Max.
1
2
.7
(0
.5
0
0
)
Mi
n
.
6
.
10
(
0
.
2
40)
6
.
60
(
0
.
2
60)
8.51 (0.335)
9.40 (0.370)
7.75 (0.305)
8.51 (0.335)
5.08
(0.200)
2.54
(0.100)
2.54
(0.100)
0.74 (0.029)
1.14 (0.045)
1
6
4
3
2
45
0.71 (0.028)
0.86 (0.034)
0.41 (0.016)
0.53 (0.021)
5
Prelim. 4/96
LAB
SEME
2N2060A
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
C
= 100mA
R
BE
10
W
I
C
= 30mA
I
B
= 0
I
C
= 100
m
A
I
E
= 0
I
E
= 100
m
A
I
C
= 0
V
CB
= 80V
I
E
= 0
T
A
= 150C
V
BE
= 5V
I
C
= 0
I
C
= 10
m
A
V
CE
= 5V
I
C
= 100
m
A
V
CE
= 5V
I
C
= 1mA
V
CE
= 5V
I
C
= 10mA
V
CE
= 5V
I
C
= 50mA
I
B
= 5mA
I
C
= 50mA
I
B
= 5mA
I
C
= 50mA
V
CE
= 10V
f = 20MHz
I
E
= 0
V
CB
= 10V
f = 1MHz
I
C
= 0
V
BE
= 0.5V
f = 1MHz
I
C
= 1mA
V
CE
= 5V
f = 1kHz
I
C
= 1mA
V
CB
= 10V
f = 1kHz
I
C
= 1mA
V
CE
= 5V
f = 1kHz
I
C
= 100
m
A
V
CE
= 5V
I
C
= 1mA
V
CE
= 5V
I
C
= 100
m
A
V
CE
= 5V
I
C
= 1mA
V
CE
= 5V
I
C
= 100
m
A
V
CE
= 5V
T
A
= 55 to +125C
ELECTRICAL CHARACTERISTICS
(TA = 25C unless otherwise stated)
V
CER(sus)*
Collector Emitter Breakdown Voltage
V
CEO(sus)*
Collector Emitter Sustaining Voltage
V
(BR)CBO
Collector Base Breakdown Voltage
V
(BR)EBO
Emitter Base Breakdown Voltage
I
CBO
Collector Cut-off Current
I
EBO
Emitter Cut-off Current
h
FE
DC Current Gain
V
CE(sat)
Collector Emitter Saturation Voltage
V
BE(sat)
Base Emitter Saturation Voltage
f
T
Current Gain Bandwidth Product
C
ob
Output Capacitance
C
ib
Input Capacitance
h
ie
Input Impedance
h
ib
Input Impedance
h
fe
Small Signal Current Gain
h
oe
Output Admittance
h
FE1
/h
FE2
DC Current Gain Ratio
1
V
BE1
-V
BE2
Base Emitter Voltage Differential
D(
V
BE1
-V
BE2
) Base Emitter Voltage Differential
D
T
Change Due To Temperature
80
60
100
7
0.002
10
2.0
25
75
30
90
40
120
50
150
0.6
0.9
60
15
85
1000
4000
20
30
50
150
16
0.9
1.0
0.9
1.0
3.0
5.0
5.0
V
V
V
V
m
A
nA
--
V
MHz
pF
pF
W
W
--
m
mhos
--
mV
m
V/C
OFF CHARACTERISTICS
ON CHARACTERISTICS
SMALL SIGNAL CHARACTERISTICS
MATCHING CHARACTERISTICS
*
Pulse Test: t
p
300
m
s,
d
2%.
1) The lowest h
FE
reading is taken as h
FE1
for this ratio.
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