LAB
SEME
2N2222A
Semelab plc.
Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 3/96
HIGH SPEED
MEDIUM POWER, NPN
SWITCHING TRANSISTOR
FEATURES
SILICON PLANAR EPITAXIAL NPN
TRANSISTOR
HIGH SPEED SATURATED SWITCHING
ALSO AVAILABLE IN CERAMIC SURFACE
MOUNT PACKAGE
V
CBO
Collector Base Voltage
V
CEO
Collector Emitter Voltage
V
EBO
Emitter Base Voltage
I
C
Collector Current
P
D
Total Device Dissipation
@ T
A
= 25C
Derate above 25C
P
D
Total Device Dissipation
@ T
C
= 25C
Derate above 25C
T
J
, T
STG
Operating and Storage Junction Temperature Range
75V
40V
6V
800mA
0.5mW
2.28mW / C
1.2W
6.85mW / C
65 to +200C
MECHANICAL DATA
Dimensions in mm (inches)
TO18 METAL PACKAGE
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25C unless otherwise stated)
PIN 1 Emitter
Underside View
PIN 2 Base
PIN 3 Collector
1
3
2
2.54 (0.100)
Nom.
0.48 (0.019)
0.41 (0.016)
dia.
5.84 (0.230)
5.31 (0.209)
4.95 (0.195)
4.52 (0.178)
5.
33 (0
.2
10)
4.
32 (0
.1
70)
12
.7
(
0
.
500
)
mi
n.
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
f
T
Transition Frequency
2
C
ob
Output Capacitance
C
ib
Input Capacitance
hfe
Small Signal Current Gain
t
d
Delay Time
t
r
Rise Time
t
s
Storage Time
t
f
Fall Time
I
C
= 20mA
V
CE
= 20V
f = 100MHz
V
CB
= 10V
I
E
= 0
f = 100kHz
V
EB
= 0.5V
I
C
= 0
f = 100kHz
I
C
= 1mA
V
CE
= 10V
f = 1kHz
I
C
= 10mA
V
CE
= 10V
f = 1kHz
V
CC
= 30V
V
BE(off)
= 0.5V
I
C
= 150mA
I
B1
= 15mA
V
CC
= 30V
I
C
= 150mA
I
B1
= I
B2
= 15mA
LAB
SEME
2N2222A
Semelab plc.
Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 3/96
I
C
= 10mA
I
B
= 0
I
C
= 10
A
I
E
= 0
I
E
= 10
A
I
C
= 0
V
CE
= 60V
V
EB(off)
= 3V
I
E
= 0
V
CB
= 60V
T
A
= 150C
I
C
= 0
V
EB
= 3V
V
CE
= 60V
V
EB(off)
= 3V
I
C
= 150mA
I
B
= 15mA
I
C
= 500mA
I
B
= 50mA
I
C
= 150mA
I
B
= 15mA
I
C
= 500mA
I
C
= 50mA
I
C
= 0.1mA
V
CE
= 10V
I
C
= 1mA
V
CE
= 10V
I
C
= 10mA
V
CE
= 10V
T
A
= 55C
I
C
= 150mA
V
CE
= 10V
1
I
C
= 150mA
V
CE
= 1V
1
I
C
= 500mA
V
CE
= 10V
1
ELECTRICAL CHARACTERISTICS
(T
A
= 25C unless otherwise stated)
V
(BR)CEO
Collector Emitter Sustaining Voltage
V
(BR)CBO
Collector Base Breakdown Voltage
V
(BR)EBO
Emitter Base Breakdown Voltage
I
CEX
Collector Cut-off Current
I
CBO
Collector Base Cut-off Current
I
EBO
Emitter Cut-off Current (I
C
= 0)
I
BL
Base Current
V
CE(sat)
1
Collector Emitter Saturation Voltage
V
BE(sat)
1
Base Emitter Saturation Voltage
h
FE
DC Current Gain
40
75
6
10
0.01
10
10
20
0.3
1
0.6
1.2
2
35
50
75
35
100
300
50
40
300
8
25
50
300
75
375
10
25
225
60
V
V
V
nA
A
nA
nA
V
V
--
MHz
pF
--
ns
ns
NOTES:
1) Pulse test: t
p
300
s ,
2%
2) f
T
is defined as the frequency at which h
FE
extrapolates to unity.
OFF CHARACTERISTICS
ON CHARACTERISTICS
SMALL SIGNAL CHARACTERISTICS
SWITCHING CHARACTERISTICS
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