Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
Prelim. 3/00
LAB
SEME
2N2222ACSM
HIGH SPEED, MEDIUM POWER, NPN
SWITCHING TRANSISTOR IN A
HERMETICALLY SEALED
CERAMIC SURFACE MOUNT PACKAGE
FOR HIGH RELIABILITY APPLICATIONS
FEATURES
SILICON PLANAR EPITAXIAL NPN
TRANSISTOR
HERMETIC CERAMIC SURFACE MOUNT
PACKAGE (SOT23 COMPATIBLE)
CECC SCREENING OPTIONS
SPACE QUALITY LEVELS OPTIONS
HIGH SPEED SATURATED SWITCHING
APPLICATIONS:
Hermetically sealed surface mount version
of the popular 2N2222A for high reliability /
space applications requiring small size
and low weight devices.
V
CBO
Collector Base Voltage
V
CEO
Collector Emitter Voltage (I
B
= 0)
V
EBO
Emitter Base Voltage (I
B
= 0)
I
C
Collector Current
P
D
Total Device Dissipation
P
D
Derate above 50C
R
ja
Thermal Resistance Junction to Ambient
T
stg,Tj
Storage Temperature,Operating Temp Range
75V
40V
6V
600mA
350mW
2.0mW / C
350C/W
55 to 200C
MECHANICAL DATA
Dimensions in mm (inches)
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25C unless otherwise stated)
PAD 1 Base
Underside View
PAD 2 Emitter
PAD 3 Collector
2
1
0.51 0.10
(0.02 0.004)
0.31
(0.012)
1.91 0.10
(0.075 0.004)
3.05 0.13
(0.12 0.005)
2.
54
0.
13
(
0
.
10
0.
005)
0.
76
0.
1
5
(
0
.
03
0.
00
6)
1.02 0.10
(0.04 0.004)
1.40
(0.055)
max.
A
0.31
(0.012)
rad.
rad.
A =
3
SOT23 CERAMIC
(LCC1 PACKAGE)
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
Prelim. 3/00
LAB
SEME
2N2222ACSM
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d
Delay Time
t
r
Rise Time
t
s
Storage Time
t
f
Fall Time
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
C
= 10mA
I
C
= 10
m
A
I
E
= 10
m
A
I
C
= 0
I
B
= 0
V
CE
= 60V
I
E
= 0
V
CB
= 60V
T
C
= 125C
I
C
= 0
V
EB
= 3V (off)
V
CE
= 60V
V
EB
= 3V (off)
I
C
= 150mA
I
B
= 15mA
I
C
= 500mA
I
B
= 50mA
I
C
= 150mA
I
B
= 15mA
I
C
= 500mA
I
C
= 50mA
I
C
= 0.1mA
V
CE
= 10V
I
C
= 1mA
V
CE
= 10V
I
C
= 10mA
V
CE
= 10V
I
C
= 10mA
V
CE
= 10V
I
C
= 150mA
V
CE
= 10V
I
C
= 150mA
V
CE
= 1V
I
C
= 500mA
V
CE
= 10V
ELECTRICAL CHARACTERISTICS
(Tcase = 25C unless otherwise stated)
V
CEO(sus)*
Collector Emitter Sustaining Voltage
V
(BR)CBO*
Collector Base Breakdown Voltage
V
(BR)EBO*
Emitter Base Breakdown Voltage
I
CEX*
Collector Cut-off Current (I
C
= 0)
I
CBO*
Collector Base Cut-off Current
I
EBO*
Emitter Cut-off Current (I
C
= 0)
I
BL*
Base Current
V
CE(sat)*
Collector Emitter Saturation Voltage
V
BE(sat)*
Base Emitter Saturation Voltage
h
FE*
DC Current Gain
T
A
= 55C
40
75
6
10
10
10
10
20
0.3
1
0.6
1.2
2
35
50
75
35
100
300
50
40
V
V
V
nA
nA
m
A
nA
nA
V
V
--
f
T
Transition Frequency
C
ob
Output Capacitance
C
ib
Input Capacitance
hfe
Small Signal Current Gain
I
C
= 20mA
V
CE
= 20V
f = 100MHz
V
CB
= 10V
I
E
= 0
f = 1.0MHz
V
BE
= 0.5V
I
C
= 0
f = 1.0MHz
I
C
= 1mA
V
CE
= 10V
f = 1kHz
I
C
= 10mA
V
CE
= 10V
f = 1kHz
300
8
30
50
300
75
375
MHz
pF
pF
10
25
225
60
ns
ns
ns
ns
V
CC
= 30V
V
BE
= 0.5V (off)
I
C1
= 150mA
I
B1
= 15mA
V
CC
= 30V
I
C
= 150mA
I
B1
= I
B2
= 15mA
fT is defined as the frequency at which hFE extrapolates to unity.
* Pulse test t
p
= 300
m
s ,
d
2%
DYNAMIC CHARACTERISTICS
(Tcase = 25C unless otherwise stated)
SWITCHING CHARACTERISTICS (RESISTIVE LOAD)
(Tcase = 25C unless otherwise stated)
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