LAB
SEME
2N2907A
Prelim. 4/96
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
HIGH SPEED
MEDIUM POWER
PNP SWITCHING TRANSISTOR
FEATURES
SILICON PLANAR EPITAXIAL PNP
TRANSISTOR
HIGH SPEED SATURATED SWITCHING
ALSO AVAILABLE IN CERAMIC SURFACE
MOUNT PACKAGE
CECC SCREENING OPTIONS
SPACE QUALITY LEVELS OPTIONS
V
CBO
Collector - Base Voltage
V
CEO
Collector - Emitter Voltage
V
EBO
Emitter - Base Voltage
I
C
Collector Current
P
D
Total Device Dissipation @ T
A
= 25C
Derate above 25C
P
D
Total Device Dissipation @ T
C
= 25C
Derate above 25C
T
J
, T
STG
Operating and Storage Junction Temperature Range
60V
60V
5V
600mA
400mW
2.28mW / C
1.8W
10.3mW / C
65 to +200C
MECHANICAL DATA
Dimensions in mm (inches)
TO18 METAL PACKAGE
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25C unless otherwise stated)
PIN 1 Emitter
Underside View
PIN 2 Base
PIN 3 Collector
1
3
2
2.54 (0.100)
Nom.
0.48 (0.019)
0.41 (0.016)
dia.
5.84 (0.230)
5.31 (0.209)
4.95 (0.195)
4.52 (0.178)
5.
33 (0
.2
10)
4.
32 (0
.1
70)
12
.7
(
0
.
500
)
mi
n.
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
LAB
SEME
2N2907A
Prelim. 4/96
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
I
C
= 10mA
I
B
= 0
I
C
= 10
m
A
I
E
= 0
I
E
= 10
m
A
I
C
= 0
V
CE
= 30V
V
BE
= 0.5V
I
E
= 0
V
CB
= 50V
T
A
= 150C
V
CE
= 60V
V
BE
= 0.5V
I
C
= 150mA
I
B
= 15mA
I
C
= 500mA
I
B
= 50mA
I
C
= 150mA
I
B
= 15mA
1
I
C
= 500mA
I
C
= 50mA
I
C
= 0.1mA
V
CE
= 10V
I
C
= 1mA
V
CE
= 10V
I
C
= 10mA
V
CE
= 10V
I
C
= 150mA
V
CE
= 10V
1
I
C
= 500mA
V
CE
= 10V
1
I
C
= 50mA
V
CE
= 20V
f = 100MHz
V
CB
= 10V
I
E
= 0
f = 100kHz
V
BE
= 2V
I
C
= 0
f = 100kHz
V
CC
= 30V
I
C
= 150mA
I
B1
= 15mA
V
CC
= 6V
I
C
= 150mA
I
B1
= I
B2
= 15mA
ELECTRICAL CHARACTERISTICS
(T
A
= 25C unless otherwise stated)
V
(BR)CEO
1
Collector Emitter Breakdown Voltage
V
(BR)CBO
Collector Base Breakdown Voltage
V
(BR)EBO
Emitter Base Breakdown Voltage
I
CEX
Collector Cut-off Current
I
CBO
Collector Cut-off Current
I
B
Base Current
V
CE(sat)
1
Collector Emitter Saturation Voltage
V
BE(sat)
Base Emitter Saturation Voltage
h
FE
DC Current Gain
f
T
Transition Frequency
2
C
ob
Output Capacitance
C
ib
Input Capacitance
t
on
TurnOn Time
t
d
Delay Time
t
r
Rise Time
t
off
TurnOff Time
t
s
Storage Time
t
f
Fall Time
60
60
5
50
0.01
10
50
0.4
1.6
0.6
1.3
2.6
75
100
100
100
300
50
200
8
30
26
45
6
10
20
40
70
100
50
80
20
30
V
V
V
nA
m
A
nA
V
V
--
MHz
pF
pF
ns
ns
NOTES:
1) Pulse test: t
p
300
m
s ,
d
2%
2) f
T
is defined as the frequency at which h
FE
extrapolates to unity.
OFF CHARACTERISTICS
ON CHARACTERISTICS
SMALL SIGNAL CHARACTERISTICS
SWITCHING CHARACTERISTICS
PDF 
ZIP