Magnatec.
Telephone +44(0)1455 554711.
Fax +44(0)1455 558843.
E-mail:
magnatec@semelab.co.uk
Website:
http://www.semelab.co.uk
V
CEO
Collector Emitter voltage
V
CBO
Collector Base voltage
V
EBO
Emitter Base voltage
I
C
Collector current
I
C(PK)
Peak Collector current
P
tot
Total Dissipation at T
case
= 25C
T
stg
Storage Temperature
T
j
Maximum Operating Junction Temperature
20V
60V
6V
5A
8A
0.9W
55 to 150C
150C
BCU83SMD
MECHANICAL DATA
Dimensions in mm
NPN EPITAXIAL PLANAR
SILICON TRANSISTOR
Ideal for high current driver applications
requiring low loss devices
FEATURES
LOW V
CE(SAT)
HIGH CURRENT
HIGH ENERGY RATING
APPLICATIONS
ANY HIGH CURRENT DRIVER
APPLICATIONS REQUIRING
EFFICIENT LOW LOSS DEVICES
SOT89
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25C unless otherwise stated)
Prelim. 1/94
1 . 5
1 . 6
4 . 5
2.
5
1.
0
4.
25
m
ax
.
1 . 5
3 . 0
0 . 4 0
0 . 5 0
0 . 4 0
-
+
*
Magnatec.
Telephone +44(0)1455 554711.
Fax +44(0)1455 558843.
E-mail:
magnatec@semelab.co.uk
Website:
http://www.semelab.co.uk
BCU83SMD
Prelim. 1/94
Collector cutoff current
Emitter cutoff current
Collector Emitter
saturation voltage
Base Emitter
saturation voltage
DC current gain
Transition frequency
Output capacitance
V
CB
= 50V
I
E
= 0
V
EB
= 5V
I
C
= 0
I
C
= 3A
I
B
= 60mA
I
C
= 3A
I
B
= 60mA
V
CE
= 2V
I
C
= 0.5A
V
CE
= 2V
I
C
= 3A
V
CE
= 10V
I
C
= 50mA
V
CB
= 10V
f = 1MHz
1.0
1.0
0.5
0.6
1.5
100
560
75
120
45
I
CBO
I
EBO
V
CE(sat)*
V
BE(sat)*
h
FE*
f
T
C
ob
Parameter
Test Conditions
Min.
Typ.
Max.
Unit.
m
A
m
A
V
V
--
MHz
pF
* Pulse test t
p
= 300
m
s ,
d
2%
ELECTRICAL CHARACTERISTICS
(T
case
= 25C unless otherwise stated)
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