2N3700DCSM
LAB
SEME
Semelab plc.
Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 2/98
HIGH VOLTAGE, MEDIUM POWER, NPN
DUAL TRANSISTOR IN A
HERMETICALLY SEALED
CERAMIC SURFACE MOUNT PACKAGE
FOR HIGH RELIABILITY APPLICATIONS
FEATURES
DUAL SILICON PLANAR EPITAXIAL NPN
TRANSISTOR
HERMETIC CERAMIC SURFACE MOUNT
PACKAGE
CECC SCREENING OPTIONS
SPACE QUALITY LEVELS OPTIONS
HIGH VOLTAGE
APPLICATIONS:
Dual Hermetically sealed surface mount ver-
sion of the popular 2N3700 for high reliability/
space applications requiring small size and
low weight devices.
V
CBO
Collector Base Voltage
V
CEO
Collector Emitter Voltage (I
B
= 0)
V
EBO
Emitter Base Voltage (I
B
= 0)
I
C
Collector Current
P
D
Per Device Dissipation
P
D
Total Device Dissipation
P
D
Derate above 25C (Per Device)
(Total)
R
ja
Thermal Resistance Junction to Ambient
T
stg
Storage Temperature
140V
80V
7V
1A
350mW
525mW
2mW / C
3mW/C
240C/W
65 to 200C
MECHANICAL DATA
Dimensions in mm (inches)
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25C unless otherwise stated)
LCC2 PACKAGE
Underside View
PAD 1 Collector 1
PAD 2 Base 1
PAD 3 Base 2
PAD 4 Collector 2
PAD 5 Emitter 2
PAD 6 Emitter 1
A
2
1
3
4
5
6
6.22 0.13
(0.245 0.005)
2
.
54
0.
13
(
0
.
10 0.
005)
1.65 0.13
(0.065 0.005)
2.29 0.20
(0.09 0.008)
1.27 0.13
(0.05 0.005)
1.40 0.15
(0.055 0.006)
4.
32
0.
13
(
0
.
170
0.
005)
0
.
64 0.
08
(
0
.
025 0.
003)
0.23
(0.009)
rad.
A =
2N3700
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
nA
A
nA
V
V
V
-
-
-
-
-
-
V
V
80
10
10
10
0.2
0.5
1.1
50
90
100
300
50
15
140
7
I
C
=10mA
V
CB
= 90V
V
CB
= 90V
T
amb
= 150C
V
EB
= 5V
I
C
= 150mA
I
B
= 15mA
I
C
= 500mA
I
B
= 50mA
I
C
= 150mA
I
B
= 15mA
I
C
= 0.1mA
V
CE
= 10V
I
C
= 10mA
V
CE
= 10V
I
C
= 150mA
V
CE
= 10V
I
C
= 500mA
V
CE
= 10V
I
C
= 1A
V
CE
= 10V
I
C
= 150mA
V
CE
= 10V
I
C
= 100
A
I
E
= 100
A
V
CEO(sus)*
Collector Emitter Sustaining Voltage
(I
B
= 0)
I
CBO*
Collector Base Cut-off Current
(I
E
= 0)
I
EBO*
Emitter Cut-off Current (I
C
= 0)
V
CE(sat)*
Collector Emitter Saturation Voltage
V
BE(sat)*
Base Emitter Saturation Voltage
h
FE*
DC Current Gain (V
CE
= 10V)
V
(BR)CBO
Collector-base Breakdown Voltage
(I
E
= 0)
V
(BR)EBO
Emitter-base BreakdownVoltage
(I
C
= 0)
2N3700DCSM
LAB
SEME
Semelab plc.
Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 2/98
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ELECTRICAL CHARACTERISTICS (per Device)
(Tcase = 25C unless otherwise stated)
f
T
Transition Frequency
hfe
Small Signal Current Gain
C
EBO
Emitter-base Capacitance
C
CBO
Collector-base Capacitance
rbb
'C
b'c
Feedback time constant
I
C
= 50mA
V
CE
= 10V
f = 20MHz
I
C
= 1mA
V
CE
= 5V
f = 1kHz
I
C
= 0
V
EB
= 0.5V
f = 1MHz
I
C
= 0
V
CB
= 10V
f = 1MHz
I
C
= 10mA
V
CB
= 10V
f = 4MHz
100
200
80
400
60
12
25
400
MHz
-
pF
pF
ps
* Pulse test t
p
= 300
s ,
1
%
DYNAMIC CHARACTERISTICS
(Tcase = 25C unless otherwise stated)
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