ChipFind - документация

Электронный компонент: 2N4391

Скачать:  PDF   ZIP
Prelim. 11/98
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612. e-mail sales@semelab.co.uk
Website http://www.semelab.co.uk
2N4391
JFET SWITCHING
N CHANNEL- DEPLETION
FEATURES
LOW ON RESISTANCE
FAST SWITCHING
MILITARY OPTIONS AVAILABLE
APPLICATIONS:
SWITCHING APPLICATIONS
V
DS
DrainSource Voltage
V
DG
DrainGate Voltage
V
GS
GateSource Voltage
I
GF
Forward Gate Current
P
D
Total Device Dissipation @ T
C
= 25C
Derate above 25C
T
J
Operating Junction Temperature Range
T
STG
Storage Temperature Range
40V
40V
40V
50mA
1.8W
10mW/ C
65 to +175C
65 to +175C
MECHANICAL DATA
Dimensions in mm (inches)
TO18 METAL PACKAGE
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25C unless otherwise stated)
PIN 1 Source
Underside View
PIN 2 Drain
PIN 3 Gate
1
3
2
2.54 (0.100)
Nom.
0.48 (0.019)
0.41 (0.016)
dia.
5.84 (0.230)
5.31 (0.209)
4.95 (0.195)
4.52 (0.178)
5.
33 (0
.2
10)
4.
32 (0
.1
70)
12
.7
(
0
.
500
)
mi
n.
(Gate is connected to case)
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
G
= 1.0
A
V
DS
= 0
V
GS
= 20V
V
DS
= 0
V
GS
= 20V
V
DS
= 0
T
A
= 150
C
V
DS
= 20V
I
D
= 1.0nA
I
G
= 1.0mA
V
DS
= 0
V
GS
= 12V
V
DS
= 20V
V
GS
= 12V
V
DS
= 20V
T
A
= 150
C
V
GS
= 0V
V
DS
= 20V
I
D
= 12mA
V
GS
= 0
I
D
= 1.0mA
V
GS
= 0
V
GS
= 0V
V
DS
= 20V
f = 1.0MHz
V
GS
= 12V
V
DS
= 0V
f = 1.0MHz
V
GS
= 0V
I
D
= 0
f = 1.0kHz
I
D(on)
= 12mA
V
GS(on)
= 12V
I
D(on)
= 12mA
V
GS(off)
= 12V
40
0.1
0.2
4.0
10
1.0
0.1
0.2
50
150
0.4
30
14
3.5
30
15
20
5.0
15
OFF CHARACTERISTICS
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612. e-mail sales@semelab.co.uk
Website http://www.semelab.co.uk
Prelim. 11/98
2N4391
ELECTRICAL CHARACTERISTICS
(T
A
= 25C unless otherwise stated)
1) Pulse test : Pulse Width < 300
s ,Duty Cycle < 2%
2) f
t
is defined as the frequency at which |h
fe
| extrapolates to untity.
ON CHARACTERISTICS
SWITCHING CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
SMALL SIGNAL CHARACTERISTICS
V
nA
A
V
V
nA
A
mA
V
pF
ns
V
(BR)GSS
Gate Source Breakdown Voltage
1
I
GSS
Gate Reverse Current
V
GS
Gate Source Voltage
V
GS(f)
Gate Source Forward Voltage
I
D(off)
Drain
Cut-off Current
I
DSS
Zero Gate voltage Drain Current
1
V
DS(on)
Drain Source OnVoltage
r
DS(on)
Static Drain Source On Resistance
C
iss
Input Capacitance
C
rss
Reverse Transfer Capacitance
r
ds(on)
DrainSource "ON" Resistance
t
on
TurnOn Time
t
off
TurnOff Time
t
r
RiseTime
t
f
FallTime