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Электронный компонент: 2N4392

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Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
Prelim. 5/99
2N4392
JFET SWITCHING
N CHANNEL- DEPLETION
FEATURES
LOW ON RESISTANCE
FAST SWITCHING
MILITARY OPTIONS AVAILABLE
APPLICATIONS:
SWITCHING APPLICATIONS
V
DS
DrainSource Voltage
V
DG
DrainGate Voltage
V
GS
GateSource Voltage
I
GF
Forward Gate Current
P
D
Total Device Dissipation @ T
C
= 25C
Derate above 25C
T
J
Operating Junction Temperature Range
T
STG
Storage Temperature Range
40V
40V
40V
50mA
1.8W
10mW/ C
65 to +175C
65 to +175C
MECHANICAL DATA
Dimensions in mm (inches)
TO18 METAL PACKAGE
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25C unless otherwise stated)
PIN 1 Source
Underside View
PIN 2 Drain
PIN 3 Gate
1
3
2
2.54 (0.100)
Nom.
0.48 (0.019)
0.41 (0.016)
dia.
5.84 (0.230)
5.31 (0.209)
4.95 (0.195)
4.52 (0.178)
5.
33 (0
.2
10)
4.
32 (0
.1
70)
12
.7
(
0
.
500
)
mi
n.
(Gate is connected to case)
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
G
= 1.0
m
A
V
DS
= 0
V
GS
= 20V
V
DS
= 0
V
GS
= 20V
V
DS
= 0
T
A
= 150
C
V
DS
= 20V
I
D
= 1.0nA
I
G
= 1.0mA
V
DS
= 0
V
GS
= 7V
V
DS
= 20V
V
GS
= 7V
V
DS
= 20V
T
A
= 150
C
V
GS
= 0V
V
DS
= 20V
I
D
= 6mA
V
GS
= 0
I
D
= 1.0mA
V
GS
= 0
V
GS
= 0V
V
DS
= 20V
f = 1.0MHz
V
GS
= 7V
V
DS
= 0V
f = 1.0MHz
V
GS
= 0V
I
D
= 0
f = 1.0kHz
I
D(on)
= 6mA
V
GS(on)
= 7V
I
D(on)
= 6mA
V
GS(off)
= 7V
40
0.1
0.2
-0.2
-5
1.0
0.1
0.2
25
75
0.4
60
14
3.5
60
15
35
5.0
20
OFF CHARACTERISTICS
Prelim. 5/99
2N4392
ELECTRICAL CHARACTERISTICS
(T
A
= 25C unless otherwise stated)
1) Pulse test : Pulse Width < 100
m
s ,Duty Cycle < 2%
2) f
t
is defined as the frequency at which |h
fe
| extrapolates to untity.
ON CHARACTERISTICS
SWITCHING CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
SMALL SIGNAL CHARACTERISTICS
V
nA
m
A
V
V
nA
m
A
mA
V
W
pF
W
ns
V
(BR)GSS
Gate Source Breakdown Voltage
1
I
GSS
Gate Reverse Current
V
GS
Gate Source Voltage
V
GS(f)
Gate Source Forward Voltage
I
D(off)
Drain
Cut-off Current
I
DSS
Zero Gate voltage Drain Current
1
V
DS(on)
Drain Source OnVoltage
r
DS(on)
Static Drain Source On Resistance
C
iss
Input Capacitance
C
rss
Reverse Transfer Capacitance
r
ds(on)
DrainSource "ON" Resistance
t
on
TurnOn Time
t
off
TurnOff Time
t
r
RiseTime
t
f
FallTime