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Электронный компонент: 2N4393CSM

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Semelab plc.
Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 5/94
2N4393CSM
LAB
SEME
SMALL SIGNAL
NCHANNEL JFET IN A
HERMETICALLY SEALED
CERAMIC SURFACE MOUNT PACKAGE
FOR HIGH RELIABILITY APPLICATIONS
FEATURES
HERMETIC CERAMIC SURFACE MOUNT
PACKAGE (SOT23 COMPATIBLE)
CECC SCREENING OPTIONS
SPACE QUALITY LEVELS OPTIONS
APPLICATIONS:
Hermetically sealed surface mount version
of the popular 2N4393 for high reliability /
space applications requiring small size
and low weight devices.
V
GD
Gate Drain Voltage
V
GS
Gate Source Voltage
I
G
Gate Current
P
D
Power Dissipation
Derate
T
j
Operating Junction Temperature Range
T
stg
Storage Temperature Range
35V
35V
50mA
350mW
2.8mW / C
55 to 150C
55 to 150C
MECHANICAL DATA
Dimensions in mm (inches)
SOT23 CERAMIC (CSM)
LCC1 PACKAGE
ABSOLUTE MAXIMUM RATINGS
(T
amb
= 25C unless otherwise stated)
PAD 1 Source
Underside View
PAD 2 Drain
PAD 3 Gate
2
1
0.51 0.10
(0.02 0.004)
0.31
(0.012)
1.91 0.10
(0.075 0.004)
3.05 0.13
(0.12 0.005)
2.
54
0.
13
(
0
.
10
0.
005)
0.
76
0.
1
5
(
0
.
03
0.
00
6)
1.02 0.10
(0.04 0.004)
1.40
(0.055)
max.
A
0.31
(0.012)
rad.
rad.
A =
3
Semelab plc.
Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 5/94
2N4393CSM
LAB
SEME
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ELECTRICAL CHARACTERISTICS
(Tamb = 25C unless otherwise stated)
V
DS
= 0V
I
G
= 1
A
V
DS
= 15V
I
D
= 10nA
V
DS
= 20V
V
GS
= 0V
V
GS
= 5V
V
DS
= 0V
T
amb
= 125C
V
DG
= 10V
V
GS
= 10V
V
DS
= 10V
V
GS
= 10V
T
amb
= 125C
V
GS
= 0V
I
D
= 3mA
V
GS
= 0V
I
D
= 1mA
V
GS
= 0V
I
D
= 0mA
f = 1kHz
V
DS
= 20V
V
GS
= 0V
f = 1MHz
V
DS
= 0V
V
GS
= 5V
f = 1MHz
V
DG
= 10V
I
D
= 10mA
f = 1kHz
V
(BR)GSS
Gate Source Breakdown Voltage
V
GSS(off)
Gate Source Cutoff Voltage
I
DSS*
Saturation Current
I
GSS
Gate Reverse Current
I
D(off)
Drain Cutoff Current
V
DS(on)
Drain Source On Voltage
R
DS(on)
Drain Source On Resistance
R
DS(on)
Drain Source On Resistance
C
ISS
Common Source Input Capacitance
Common Source Reverse Transfer
C
RSS
Capacitance
_
e
n
Equivalent Input Noise Voltage
35
55
0.5
3
5
5
100
3
200
5
100
3
200
0.25
0.4
100
100
13
16
4
5
3.0
V
mA
pA
nA
pA
nA
V
pF
pF
nV
Hz
STATIC CHARACTERISTICS
DYNAMIC CHARACTERISTICS