Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Prelim. 8/96
2N5014
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
SILICON EPITAXIAL
NPN TRANSISTOR
FEATURES
General purpose power transistor for switch-
ing and linear applications in a hermetic
TO39 package.
V
CBO
Collector Base Voltage
V
CER
Collector Emitter Voltage
R = 10
W
V
EBO
Emitter Base Reverse Voltage
I
C
Continuous Collector Current
P
TOT
Total Device Dissipation
T
C
= 25C
T
J
Maximum Operating Junction Temperature
T
STG
and Storage Temperature Range
900V
900V
5V
2W
3.5A
200C
-55 to 200C
MECHANICAL DATA
Dimensions in mm (inches)
TO39 PACKAGE
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25C unless otherwise stated)
PIN 1 Emitter
PIN 2 Base
PIN 3 Collector
0 . 8 9
( 0 . 0 3 5 )
m a x .
1 2 . 7 0
( 0 . 5 0 0 )
m i n .
6 . 1 0 ( 0 . 2 4 0 )
6 . 6 0 ( 0 . 2 6 0 )
8 . 8 9 ( 0 . 3 5 )
9 . 4 0 ( 0 . 3 7 )
7 . 7 5 ( 0 . 3 0 5 )
8 . 5 1 ( 0 . 3 3 5 )
7 . 7 5 ( 0 . 3 0 5 )
8 . 5 1 ( 0 . 3 3 5 )
d i a .
0 . 6 6 ( 0 . 0 2 6 )
1 . 1 4 ( 0 . 0 4 5 )
0 . 7 1 ( 0 . 0 2 8 )
0 . 8 6 ( 0 . 0 3 4 )
2 . 5 4
( 0 . 1 0 0 )
5 . 0 8 ( 0 . 2 0 0 )
t y p .
4 5
1
2
3
ELECTRICAL CHARACTERISTICS
(T
C
= 25C unless otherwise stated)
I
CBO
Collector Base Leakage Current
hFE
D.C Current Gain
fae
V
CB
= 900V
V
CE
= 10V
I
C
=0.02A
0.012
20
180
20
mA
--
MHz
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