ABSOLUTE MAXIMUM RATINGS
T
case
= 25c unless otherwise stated
2N5415CSM4
2N5416CSM4
Prelim. 02/00
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
V
CBO
Collector Base Voltage (I
E
=0)
V
CEO(sus)
Collector Emitter Voltage (I
B
=0)
V
EBO
Emitter Base Voltage (I
C
=0)
I
C
Collector Current
I
B
Base Current
P
tot
Total Device Dissipation at T
A
25C
T
stg
Storage Temperature
T
J
Junction Temperature
R
th-j-amb
Thermal Resistance Junction - Ambient
1A
0.5A
1W
65 to +200C
175C
150C/W
MECHANICAL DATA
Dimensions in mm (inches)
1
2
3
4
5.59 0.13
(0.22 0.005)
0.23
(0.009)
rad.
1.02 0.20
(0.04 0.008)
2.03 0.20
(0.08 0.008)
1.40 0.15
(0.055 0.006)
0.25 0.03
(0.01 0.001)
0.23
(0.009)
min.
1.
27 0.
05
(
0
.
05 0.
002
)
3.
81 0.
13
(
0
.
15 0.
00
5)
0.
64 0.
08
(
0
.
025 0.
003)
PNP PLANAR EPITAXIAL TRANSISTOR
IN A HERMETICALLY SEALED CERAMIC
SURFACE MOUNT PACKAGE FOR HIGH
RELIABILITY APPLICATIONS
FEATURES
Silicon Planar PNP Transistor
Hermetic Ceramic Surface Mount Package
CECC Screening Options
Space quality Options
LCC3 PACKAGE
Underside View
PAD 1 Collector
PAD 2 N/C
PAD 3 Emitter
PAD 4 Base
2N5415
2N5416
-200V
-200V
-4V
-350V
-300V
-6V
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
CB
= -175V
2N5415
V
CB
= -280V
2N5416
V
CE
= -150V
V
EB
= -4V
2N5415
V
EB
= -6V
2N5416
I
C
= -10mA
2N5415
I
C
= -10mA
2N5416
I
C
= -50mA
R
BE
=50
W
2N5416
I
C
= -50mA
I
B
=-5mA
I
C
= -50mA
V
CE
= -10V
I
C
= -50mA
V
CE
=-10V
2N5415
I
C
= -50mA
V
CE
=-10V
2N5416
I
C
= -5mA
V
CE
= -10V
f = 1KHz
I
E
= 0
V
CB
= -10V
f = 1MHz
I
C
= -10mA
V
CE
= -10V
f = 5MHz
-50
-50
-50
-20
-20
-200
-300
-350
-0.5
-1.5
30
150
30
120
25
25
15
I
CBO
I
CEO
I
EBO
V
CEO(sus)*
V
CER(sus)*
V
CE(sat)
V
BE*
h
FE*
h
fe
C
cbo
f
T
m
A
m
A
m
A
V
V
V
V
V
--
--
pF
MHz
2N5415CSM4
2N5416CSM4
Prelim. 02/00
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
Collector Cut Off Current (V
E
=0)
Emitter Cut Off Current (I
B
=0)
Emitter Cut Off Current (I
C
=0)
Collector Emitter on Voltage(I
B
=0)
Collector Emitter Breakdown Voltage
Collector Base Breakdown Voltage
Base-Emitter Voltage
DC Current Gain
Small Signal Current Gain
Collector-Base Capacitance
Transition Frequency
ELECTRICAL CHARACTERISTICS
(Tcase = 25C unless otherwise stated)
*Pulsed: duration = 300
m
s, duty cycle 1.5%
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