Prelim. 11/98
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612. e-mail sales@semelab.co.uk
Website http://www.semelab.co.uk
2N6796
TMOS FET TRANSISTOR
N CHANNEL
FEATURES
V
DSS
= 100V
I
D
= 8A
R
DSON
= 0.18
V
DSS
DrainSource Voltage
V
DGR
DrainGate Voltage (R
GS
= 1.0m
)
V
GS
GateSource Voltage
I
D
Drain Current Continuous
I
DM
Drain Current Pulsed
P
D
Total Device Dissipation @ T
C
= 25C
Derate above 25C
T
J
, T
STG
Operating and Storage Junction Temperature Range
THERMAL CHARACTERISTICS
R
JC
Thermal Resistance Junction to Case
R
JC
Thermal Resistance Junction to Ambient
T
L
Maximum Lead Temperature 1.5mm from Case for
10 s
100V
100V
20V
8.0A
32A
25W
0.2W/ CW
55 to +150C
5.0CW
175CW
300C
MECHANICAL DATA
Dimensions in mm (inches)
TO39 METAL PACKAGE
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25C unless otherwise stated)
PIN 1 Source
Underside View
PIN 2 Gate
PIN 3 Drain Case
0 . 8 9
( 0 . 0 3 5 )
m a x .
1 2 . 7 0
( 0 . 5 0 0 )
m i n .
6 . 1 0 ( 0 . 2 4 0 )
6 . 6 0 ( 0 . 2 6 0 )
8 . 8 9 ( 0 . 3 5 )
9 . 4 0 ( 0 . 3 7 )
7 . 7 5 ( 0 . 3 0 5 )
8 . 5 1 ( 0 . 3 3 5 )
7 . 7 5 ( 0 . 3 0 5 )
8 . 5 1 ( 0 . 3 3 5 )
d i a .
0 . 6 6 ( 0 . 0 2 6 )
1 . 1 4 ( 0 . 0 4 5 )
0 . 7 1 ( 0 . 0 2 8 )
0 . 8 6 ( 0 . 0 3 4 )
2 . 5 4
( 0 . 1 0 0 )
5 . 0 8 ( 0 . 2 0 0 )
t y p .
4 5
1
2
3
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
(BR)DSS
DrainSource Breakdown Voltage
I
DSS
Zero Gate Voltage Drain Current
I
GSSF
GateBody Leakage Current,Forward
I
GSSR
GateBody Leakage Current,Reverse
V
GS(th)
Gate Thresshold Voltage
r
DS(on)
Static DrainSource OnResistance
V
DS(on)
DrainSource OnVoltage
gfs
Forward Transconductance
C
iss
Input Capacitance
C
oss
Output capacitance
C
rss
Reverse Transfer Capacitance
t
on
TurnOn Time
t
off
TurnOff Time
t
r
RiseTime
t
f
FallTime
V
SD
Diode Forward Voltage
t
on
Forward turn-On Time
t
rr
Reverse Recovery Time
SOURCE DRAIN DIODE CHARACTERISTICS*
V
GS
= 0
I
D
= 0.25mA
V
DS
=Rated V
DSS
V
GS
= 0
V
DS
= 80V
V
GS
= 0
T
J
= 125
C
V
DS
= 0
V
GS
= 20V
V
DS
= 0
V
GS
= 20V
V
DS
= V
GS
I
D
= 0.5mA
V
GS
= 10V
I
D
= 5.0A
T
A
= 125
C
V
GS
= 10V
I
D
= 8.0A
V
GS
= 15V
I
D
= 5.0A
V
DS
= 25V
V
GS
= 0
f = 1.0MH
Z
V
DD
= 30V
I
D
= 5.0A
R
gen
= 50 ohms
I
S
= Rated I
D(on)
V
GS
= 0
100
250
1000
100
100
2.0
4.0
0.18
0.35
1.56
3.0
9.0.
350
900
150
500
50
150
30
75
40
45
0.75
1.5
Negligible
300
OFF CHARACTERISTICS
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612. e-mail sales@semelab.co.uk
Website http://www.semelab.co.uk
Prelim. 11/98
2N6796
ELECTRICAL CHARACTERISTICS
(T
A
= 25C unless otherwise stated)
1) Pulse test : Pulse Width < 300
s ,Duty Cycle < 2%
ON CHARACTERISTICS
DYNAMIC CHARACTERISTICS
SWITCHING CHARACTERISTICS
V
A
nA
V
V
mhos
pF
ns
V
ns
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