Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
10/99
2N6796LCC4
V
DSS
= 100V
I
D
= 7.4A
R
DS(ON)
= 0.18
FEATURES
Hermetically sealed ceramic surface
mount package
Small footprint
Simple drive requirements
V
DS
DrainSource Voltage
V
DGR
DrainGate Voltage
(V
GS
= 1.0m
)
V
GS
GateSource Voltage
I
D
Drain Current Continuous
I
DM
Drain Current Pulsed
P
D
Total Device Dissipation @ T
C
= 25C
Derate above 25C
T
J
, T
STG
Operating and Storage Junction Temperature Range
THERMAL CHARACTERISTICS
R
JC
Thermal Resistance Junction to Case
R
JC
Thermal Resistance Junction to Ambient
T
L
Maximum Lead Temperature 1.5mm from Case for 10 secs.
100V
100V
20V
7.4A
30A
22W
0.17C/W
55 to +150C
5.0CW
175CW
300C
MECHANICAL DATA
Dimensions in mm (inches)
LCC4 CERAMIC SURFACE MOUNT PACKAGE
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25C unless otherwise stated)
Underside View
Pads 6, 7, 8, 9, 10, 11, 12, 13.
Source
Pads 4,5
Gate
Pads 1,2,15,16,17,18
Drain
Pads 3,14
Not Connected
1.39 (0.055)
1.15 (0.045)
0.76 (0.030)
0.51 (0.020)
1.39 (0.055)
1.02 (0.040)
15 16
13
12
14
3
4
5
6
7
17
18
1
2
11
10
8
9
9.14 (0.360)
8.64 (0.340)
1.27 (0.050)
1.07 (0.040)
2.16 (0.085)
7.62 (0.300)
7.12 (0.280)
1.65 (0.065)
1.40 (0.055)
0.33 (0.013)
0.08 (0.003)
0.43 (0.017)
0.18 (0.007
Rad.
Rad.
N-CHANNEL
POWER MOSFET
10/99
2N6796LCC4
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
(BR)DSS
DrainSource Breakdown Voltage
I
DSS
Zero Gate Voltage Drain Current
I
GSSF
GateBody Leakage, Forward
I
GSSR
GateBody Leakage, Reverse
V
GS(th)
Gate Threshold Voltage
R
DS(on)
Static DrainSource OnResistance
V
DS(on)
DrainSource OnVoltage
gfs
Forward Transconductance
C
iss
Input Capacitance
C
oss
Output capacitance
C
rss
Reverse Transfer Capacitance
V
GS
= 0
I
D
= 0.25mA
V
DS
= Rated V
DS
V
GS
= 0
V
DS
= 80V
V
GS
= 0A
T
J
= 125
C
V
DS
= 0
V
GS
= 20V
V
DS
= 0
V
GS
= -20V
V
DS
= V
GS
I
D
= 0.5mA
V
GS
= 10V
I
D
= 4.7A
T
A
= 125
C
V
GS
= 15V
I
D
= 7.4A
V
GS
= 15V
I
D
= 4.7A
V
DS
= 25V
V
GS
= 0
f = 1.0MHz
100
250
1000
100
-100
2
4
0.18
0.35
1.56
3
9
350
900
150
500
50
150
V
A
nA
V
V
mhos
pF
OFF CHARACTERISTICS
ON CHARACTERISTICS
DYNAMIC CHARACTERISTICS
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