Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
Prelim. 6/99
2N6798
N-CHANNEL ENHANCEMENT
MODE TRANSISTOR
FEATURES
V
(BR)DSS
= 200V
I
D
= 5.5A
R
DSON
= 0.40
W
W
W
W
V
DS
DrainSource Voltage
V
GS
GateSource Voltage
I
D
Drain Current Continuous T
C
= 25C
T
C
= 100C
I
DM
Drain Current Pulsed
I
A
Avalanche Current
P
D
Total Device Dissipation @ T
C
= 25C
T
C
= 100C
T
J
, T
STG
Operating and Storage Junction Temperature Range
THERMAL CHARACTERISTICS
R
q
JC
Thermal Resistance Junction to Case
R
q
JC
Thermal Resistance Junction to Ambient
T
L
Maximum Lead Temperature 1.5mm from Case for
10 secs.
200V
20V
5.5A
3.5A
22A
3.1A
25W
10W
55 to +150C
5.0CW
175CW
300C
MECHANICAL DATA
Dimensions in mm (inches)
TO39 METAL PACKAGE
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25C unless otherwise stated)
PIN 1 Source
Underside View
PIN 2 Gate
PIN 3 Drain
0 . 8 9
( 0 . 0 3 5 )
m a x .
1 2 . 7 0
( 0 . 5 0 0 )
m i n .
6 . 1 0 ( 0 . 2 4 0 )
6 . 6 0 ( 0 . 2 6 0 )
8 . 8 9 ( 0 . 3 5 )
9 . 4 0 ( 0 . 3 7 )
7 . 7 5 ( 0 . 3 0 5 )
8 . 5 1 ( 0 . 3 3 5 )
7 . 7 5 ( 0 . 3 0 5 )
8 . 5 1 ( 0 . 3 3 5 )
d i a .
0 . 6 6 ( 0 . 0 2 6 )
1 . 1 4 ( 0 . 0 4 5 )
0 . 7 1 ( 0 . 0 2 8 )
0 . 8 6 ( 0 . 0 3 4 )
2 . 5 4
( 0 . 1 0 0 )
5 . 0 8 ( 0 . 2 0 0 )
t y p .
4 5
1
2
3
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
(BR)DSS
DrainSource Breakdown Voltage
V
GS(th)
Gate Thresshold Voltage
I
GSS
GateBody Leakage
I
D(on)
On-State Drain Current
1
I
DSS
Zero Gate Voltage Drain Current
r
DS(on)
DrainSource OnResistance
1
gfs
Forward Transconductance
1
C
iss
Input Capacitance
C
oss
Output capacitance
C
rss
Reverse Transfer Capacitance
t
don
TurnOn Delay Time
t
r
RiseTime
t
d(of)
Turn off Delay Time
t
f
FallTime
V
SD
Diode Forward Voltage
1
I
S
Continues Current
I
SM
Pulsed Current
2
t
rr
Reverse Recovery Time
Q
rr
Reverse Recovered Charge
V
GS
= 0
I
D
= 1000
m
A
V
DS
=V
GS
I
D
= 250
m
A
V
DS
= 0
V
GS
= 20V
V
DS
= 2.2
V
GS
= 10V
V
DS
=0.8 x V
(BR)DSS
V
GS
= 0
Tj = 125
C
V
GS
= 10V
I
D
= 3.5A
V
DS
= 5V
I
D
= 3.5A
V
DS
= 25V
V
GS
= 0
f = 1.0MH
Z
V
DD
= 77V
RL = 22
W
I
D
= 3.5A
V
GEN
= 10V
R
G
= 7.5 ohms
I
F
= I
S
V
GS
= 0
I
F
= I
S
dI
F
/DT = 100A/
m
S
200
2.0
4.0
100
5.5
25
250
0.25
4.0
2.5
3.0
600
250
80
8
30
42
50
12
50
30
40
1.4
5.5
22
150
500
6
V
nA
A
m
A
W
s(
)
pF
ns
V
A
ns
m
C
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
Prelim. 6/99
2N6798
ELECTRICAL CHARACTERISTICS
(T
J
= 25C unless otherwise stated)
1) Pulse test : Pulse Width < 300
m
s ,Duty Cycle < 2%
2) Pulse width limited by maximum juction temperature
SOURCE DRAIN DIODE RATING CHARACTERISTICS
PDF 
ZIP