Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612. e-mail sales@semelab.co.uk
Website http://www.semelab.co.uk
Prelim. 7/98
2N7002CSM
* Pulse width limited by maximum junction temperature.
NCHANNEL
ENHANCEMENT MODE
MOS TRANSISTOR
FEATURES
V
(BR)DSS
= 60V
RDS
(ON)
= 7.5
I
D
= 0.115A
V
DS
Drain Source Voltage
V
GS
Gate Source Voltage
I
D
Drain Current
@ T
CASE
= 25C
I
D
Drain Current
@ T
CASE
= 100C
I
DM
Pulsed Drain Current *
P
D
Power Dissipation
@ T
CASE
= 25C
P
D
Power Dissipation
@ T
CASE
= 100C
T
j
Operating Junction Temperature Range
T
stg
Storage Temperature Range
60V
40V
0.115A
0.073A
0.8A
200mW
80mW
55 to 150C
55 to 150C
MECHANICAL DATA
Dimensions in mm (inches)
ABSOLUTE MAXIMUM RATINGS
(T
CASE
= 25C unless otherwise stated)
SOT23 CERAMIC
(LCC1 PACKAGE)
2
1
0.51 0.10
(0.02 0.004)
0.31
(0.012)
1.91 0.10
(0.075 0.004)
3.05 0.13
(0.12 0.005)
2.
54
0.
13
(
0
.
10
0.
005)
0.
76
0.
1
5
(
0
.
03
0.
00
6)
1.02 0.10
(0.04 0.004)
1.40
(0.055)
max.
A
0.31
(0.012)
rad.
rad.
A =
3
PAD 1 Gate
Underside View
PAD 2 Source
PAD 3 Drain
Parameter
Min.
Typ.
Max.
Unit
R
JA
Thermal Resistance, Junction to Ambient
625
C/W
V
(BR)DSS
Gate Source Breakdown Voltage
V
GS(th)
Gate Threshold Voltage
I
GSS
Gate Body Leakage Current
I
DSS
Zero Gate Voltage Drain Current
I
D(on)*
OnState Drain Current
R
DS(on)*
Drain Source On Resistance
V
DS(on)*
Drain Source On Voltage
g
FS*
Forward Transconductance
g
OS*
Common Source Output Conductance
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
t
ON
TurnOn Time
t
OFF
TurnOff Time
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612. e-mail sales@semelab.co.uk
Website http://www.semelab.co.uk
Prelim. 7/98
2N7002CSM
ELECTRICAL CHARACTERISTICS
(T
CASE
= 25C unless otherwise stated)
V
GS
= 0V
I
D
= 10
A
V
DS
= V
GS
I
D
= 0.25mA
V
GS
= 20VV
DS
= 0V
V
DS
= 60V
V
GS
= 0V
T
CASE
= 125C
V
DS
2V
DS(ON)
V
GS
= 10V
V
GS
= 5V
I
D
= 50mA
T
CASE
= 125C
V
GS
= 10V
I
D
= 0.5A
T
CASE
= 125C
V
GS
= 5V
I
D
= 50mA
V
GS
= 10V
I
D
= 0.5A
T
CASE
= 125C
V
DS
= 10V
I
D
= 0.2A
V
DS
= 5V
I
D
= 50mA
V
DS
= 25V
V
GS
= 0V
f = 1MHz
V
DD
= 30V
V
GEN
= 10V
R
L
= 150
R
G
= 25
I
D
= 0.2A
60
70
1
2.15
2.5
100
1
500
500
1000
5
7.5
9
13.5
2.5
7.5
4.4
13.5
0.25
0.375
1.25
3.75
2.2
6.75
80
170
500
16
50
11
25
2
5
7
20
7
20
V
nA
A
mA
V
ms
s
pF
ns
STATIC CHARACTERISTICS
DYNAMIC CHARACTERISTICS
SWITCHING CHARACTERISTICS
* Pulse Test: PW = 80
s ,
1%
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
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