2N7224
IRFM150
LAB
SEME
Semelab plc.
Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612.
E-mail:
sales@semelab.co.uk
Website
http://www.semelab.co.uk
2/99
V
GS
Gate Source Voltage
I
D
Continuous Drain Current
(V
GS
= 10V , T
case
= 25C)
I
D
Continuous Drain Current
(V
GS
= 10V , T
case
= 100C)
I
DM
Pulsed Drain Current
1
P
D
Power Dissipation @ T
case
= 25C
Linear Derating Factor
E
AS
Single Pulse Avalanche Energy
2
dv/dt
Peak Diode Recovery
3
T
J
, T
stg
Operating and Storage Temperature Range
R
q
JC
Thermal Resistance Junction to Case
R
q
JCS
Thermal Resistance Case to Sink (Typical)
R
q
JCA
Thermal Resistance Junction-to-Ambient
20V
34A
21A
136A
150W
1.2W/C
150mJ
5.5V/ns
55 to 150C
0.83C/W
0.21C/W
48C/W
MECHANICAL DATA
Dimensions in mm (inches)
1
2
3
13.59 (0.535)
13.84 (0.545)
3.53 (0.139)
3.78 (0.149)
Dia.
6.32 (0.249)
6.60 (0.260)
1.02 (0.040)
1.27 (0.050)
30.
35 (
1
.
195)
31.
40 (
1
.
235)
16.
89 (
0
.
665)
17.
40 (
0
.
685)
13.
59 (
0
.
5
35)
13.
84 (
0
.
5
45)
2
0
.
07 (0.
790)
2
0
.
32 (0.
800)
3.81 (0.150)
BSC
0.89 (0.035)
1.14 (0.045)
3.81 (0.150)
BSC
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25C unless otherwise stated)
TO254AA Package
Notes
1) Pulse Test: Pulse Width
300
m
s,
d
2%
2) @ V
DD
= 25V , L
200
m
H , R
G
= 25
W
, Peak I
L
= 34A , Starting T
J
= 25C
3) @ I
SD
34A , di/dt
70A/
m
s , V
DD
BV
DSS
, T
J
150C , SUGGESTED R
G
= 2.35
W
NCHANNEL
POWER MOSFET
FEATURES
REPETITIVE AVALANCHE RATING
ISOLATED AND HERMETICALLY SEALED
ALTERNATIVE TO TO-3 PACKAGE
SIMPLE DRIVE REQUIREMENTS
EASE OF PARALLELING
Pin 1 Drain
Pin 2 Source
Pin 3 Gate
V
DSS
100V
I
D(cont)
34A
R
DS(on)
0.070
W
W
W
W
2N7224
IRFM150
LAB
SEME
Semelab plc.
Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612.
E-mail:
sales@semelab.co.uk
Website
http://www.semelab.co.uk
2/99
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
GS
= 0
I
D
= 1mA
Reference to 25C
I
D
= 1mA
V
GS
= 10V
I
D
= 21A
V
GS
= 10V
I
D
= 34A
V
DS
= V
GS
I
D
= 250
m
A
V
DS
15V
I
DS
= 21A
V
GS
= 0
V
DS
= 0.8BV
DSS
T
J
= 125C
V
GS
= 20V
V
GS
= 20V
V
GS
= 0
V
DS
= 25V
f = 1MHz
V
GS
= 10V
I
D
= 34A
V
DS
= 0.5BV
DS
I
D
=34A
V
DS
= 0.5BV
DS
V
DD
= 50V
I
D
= 34A
R
G
= 2.35
W
I
S
= 34A
T
J
= 25C
V
GS
= 0
I
F
= 34A
T
J
= 25C
d
i
/ d
t
100A/
m
s V
DD
50V
ELECTRICAL CHARACTERISTICS
(Tamb = 25C unless otherwise stated)
Drain Source Breakdown Voltage
Temperature Coefficient of
Breakdown Voltage
Static Drain Source OnState
Resistance
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
Forward Gate Source Leakage
Reverse Gate Source Leakage
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate Source Charge
Gate Drain ("Miller") Charge
TurnOn Delay Time
Rise Time
TurnOff Delay Time
Fall Time
Continuous Source Current
Pulse Source Current
2
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward TurnOn Time
100
0.13
0.070
0.081
2
4
9
25
250
100
100
3700
1100
200
50
125
8
22
15
65
35
190
170
130
34
136
1.8
500
2.9
Negligible
8.7
8.7
V
V / C
W
V
S
(
W
m
A
nA
pF
nC
nC
ns
A
V
ns
m
C
nH
BV
DSS
D
BV
DSS
D
T
J
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
I
GSS
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
L
D
L
S
STATIC ELECTRICAL RATINGS
Notes
1) Pulse Test: Pulse Width
300
m
s,
d
2%
2) Repetitive Rating Pulse width limited by maximum junction temperature.
DYNAMIC CHARACTERISTICS
SOURCE DRAIN DIODE CHARACTERISTICS
Internal Drain Inductance
(from centre of drain pad to die)
Internal Source Inductance
(from centre of source pad to end of source bond wire)
PACKAGE CHARACTERISTICS
(
W
)
PDF 
ZIP