Prelim.9/98
BCU81-SMD
Magnatec.
Telephone +44(0)1455 554711.
Fax +44(0)1455 558843.
E-mail:
magnatec@semelab.co.uk
Website:
http://www.semelab.co.uk
V
CBO
Collector Base voltage
V
CEO
Collector Emitter voltage (I
B
= 0)
V
EBO
Emitter Base voltage
I
C
Collector current
I
CP
Collector Current (Pulse)
P
C
Collector Dissipation
(Mounted on Ceramic Board (250mm
2 x 0.8mm)
T
j
Junction Temperature
T
stg
Storage Temperature
30V
10V
6V
3A
5A
500mW
1.3W
150C
55 to 150C
MECHANICAL DATA
Dimensions in mm
1 . 5
1 . 6
4 . 5
2.
5
1.
0
4.
25
m
ax
.
1 . 5
3 . 0
0 . 4 0
0 . 5 0
0 . 4 0
-
+
*
NPN EPITAXIAL PLANAR
SILICON TRANSISTOR
Ideal for high current driver applications
requiring low loss devices
FEATURES
LOW V
CE(SAT)
HIGH CURRENT
HIGH ENERGY RATING
APPLICATIONS
ANY HIGH CURRENT DRIVER
APPLICATIONS REQUIRING
EFFICIENT LOW LOSS DEVICES
SOT89
ABSOLUTE MAXIMUM RATINGS
(Tcase = 25C unless otherwise stated)
Prelim.9/98
BCU81-SMD
Magnatec.
Telephone +44(0)1455 554711.
Fax +44(0)1455 558843.
E-mail:
magnatec@semelab.co.uk
Website:
http://www.semelab.co.uk
Parameter
Test Conditions
Min.
Typ.
Max.
Unit.
V
(BR)CEO
Collector Emitter Base
Breakdown Voltage
V
(BR)CBO
Collector Base
Breakdown Voltage
V
(BR)EBO
Emitter Base Breakdown Voltage
ICBO
Collector CutOff Current
IEBO
Emitter CutOff Current
hFE
DC Current Gain
fT
Transition frequency
Cob
Output Capacitance
IC = 1mA
RBE = 0
IC = 10
m
A
IE = 0
IC = 0
IE = 10
m
A
VCB = 20V
IE = 0
VBE = 4V
IC = 0
VCE = 2V
IC = 3A
VCE = 10V
IC = 50mA
VCB = 10V
f = 1MHz
10
30
6
100
100
140
210
200
30
V
V
V
n
A
n
A
--
MHz
pF
ELECTRICAL CHARACTERISTICS
(T
A
= 25C unless otherwise stated)
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