Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
Prelim. 7/00
V
CBO
Collector - Base voltage (I
E
= 0)
V
CEO
Collector - Emitter voltage (I
B
= 0)
V
EBO
Emitter - Base voltage (I
C
= 0)
I
E
, I
C
Emitter , Collector current
I
B
Base current
P
tot
Total power dissipation at T
case
75C
T
stg
Storage Temperature
T
j
Junction Temperature
60V
80V
100V
60V
80V
100V
5V
15A
5A
90W
65 to 200C
200C
LAB
SEME
BDS10 BDS10SMD
BDS11 BDS11SMD
BDS12 BDS12SMD
MECHANICAL DATA
Dimensions in mm
16.
5
13.
5
10.
6
13.
70
2 . 5 4
B S C
1 0. 6
3 . 6
D ia .
0 . 8
4 . 6
1 . 0
2. 70
B S C
1 2 3
3 . 6 0 ( 0 . 1 4 2 )
M a x .
3 . 7 0 ( 0 . 1 4 6 )
3 . 4 1 ( 0 . 1 3 4 )
3 . 7 0 ( 0 . 1 4 6 )
3 . 4 1 ( 0 . 1 3 4 )
0 . 8 9
( 0 . 0 3 5 )
m i n .
4.
14
(
0.
163)
3.
84
(
0.
151)
1
0
.6
9
(
0
.4
2
1
)
1
0
.3
9
(
0
.4
0
9
)
9 . 6 7 ( 0 . 3 8 1 )
9 . 3 8 ( 0 . 3 6 9 )
1 1 . 5 8 ( 0 . 4 5 6 )
1 1 . 2 8 ( 0 . 4 4 4 )
16.
02
(
0
.
6
31)
15.
73
(
0
.
6
19)
0 . 5 0 ( 0 . 0 2 0 )
0 . 2 6 ( 0 . 0 1 0 )
0.
76
(
0
.
030) mi
n
.
1
3
2
ABSOLUTE MAXIMUM RATINGS
(T
case
=25C unless otherwise stated)
BDS10
BDS11
BDS12
SILICON NPN
EPITAXIAL BASE IN
TO220 METAL AND
SMD1 CERAMIC SURFACE
MOUNT PACKAGES
FEATURES
HERMETIC METAL OR CERAMIC PACKAGES
HIGH RELIABILITY
MILITARY AND SPACE OPTIONS
SCREENING TO CECC LEVELS
FULLY ISOLATED (METAL VERSION)
APPLICATIONS
POWER LINEAR AND SWITCHING
APPLICATIONS
GENERAL PURPOSE POWER
TO220M - TO220 Metal Package - Isolated
SMD1
- Ceramic Surface Mount Package
Pin 1 Base
Pin 2 Collector
Pin 3 Emitter
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
Prelim. 7/00
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
LAB
SEME
BDS10 BDS10SMD
BDS11 BDS11SMD
BDS12 BDS12SMD
BDS10
V
CB
= 60V
BDS11
V
CB
= 80V
BDS12
V
CB
= 100V
BDS10
V
CE
= 30V
BDS11
V
CE
= 40V
BDS12
V
CE
= 50V
V
EB
= 5V
BDS10
BDS11
I
C
= 100mA
BDS12
I
C
= 5A
I
B
= 0.5A
I
C
= 10A
I
B
= 2.5A
I
C
= 10A
I
B
= 2.5A
I
C
= 5A
V
CE
= 4V
I
C
= 0.5A
V
CE
= 4V
I
C
= 5A
V
CE
= 4V
I
C
= 10A
V
CE
= 4V
I
C
= 0.5A
V
CE
= 4V
500
500
500
1
1
1
1
60
80
100
1
3
2.5
1.5
40
250
15
150
5
3
m
A
mA
mA
V
V
V
V
MHz
ELECTRICAL CHARACTERISTICS (Tcase = 25C unless otherwise stated)
*Pulsed : Pulse duration = 300
m
s , duty cycle = 1.5%
THERMAL DATA
R
THj-case
Thermal resistance junction - case
Max. 1.4C/W
R
THcase-sink
Thermal resistance case - heatsink **
Typ. 1.0C/W
R
THj-a
Thermal resistance junction - ambient
Max. 80C/W
** Smooth flat surface using thermal grease.
Parameter
Test Conditions
Max.
Unit
t
on
t
s
t
r
On Time
(t
d
+ t
r
)
Storage Time
Fall Time
I
C
= 4A V
CC
= 30V I
B1
= 0.4A
I
C
= 4A V
CC
= 30V
I
B1
= I
B2
= 0.4A
0.7
1.0
0.8
m
s
m
s
m
s
SWITCHING CHARACTERISTICS
I
CBO
I
CEO
I
EBO
V
CEO(sus)*
V
CE(sat)*
V
BE(sat)*
V
BE*
h
FE*
f
T
Collector cut-off current
(I
E
= 0)
Collector cut-off current
(I
B
= 0)
Emitter cut-off current
(I
C
= 0)
Collector - Emitter
sustaining voltage (I
B
= 0)
Collector - Emitter
saturation voltage
Base - Emitter
saturation voltage
Base - Emitter voltage
DC Current gain
Transition frequency
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