- 90V
- 55V
- 60V
- 90V
-7V
-4V
-2V
29W
200C
65 to 200C
6C / W
BDX14A
A
Prelim. 02/00
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
PNP
SILICON TRANSISTOR,
EPITAXIAL BASE
FEATURES:
LF Large Signal Power Amplification
Medium Current Switching
V
CBO
Collector Base Voltage (Open Emitter)
V
CEO
Collector Emitter Voltage (Open Base)
V
CER
Collector Emitter Voltage
R
BE
=100
W
V
CEX
Collector Base Voltage
V
BE
= +1.5V
V
EBO
Emitter Base Voltage
I
C
Collector Current
I
B
Base Current
P
tot
Power Dissipation
T
J
Maximum Junction Temperature
T
STG
Storage Temperature
R
th-(j-c)
Junction to Case.
MECHANICAL DATA
Dimensions in mm
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25C unless otherwise stated)
24.33 (0.958)
24.43 (0.962)
14.48 (0.570)
14.99 (0.590)
3.68
(0.145) rad.
max.
3.61 (0.142)
3.86 (0.145)
rad.
0.71 (0.028)
0.86 (0.034)
1.27 (0.050)
1.91 (0.750)
9.14 (0.360)
min.
4.83 (0.190)
5.33 (0.210)
6.35 (0.250)
8.64 (0.340)
11.94 (0.470)
12.70 (0.500)
TO66 Package.
Pin 1 Base
Pin 2 Emitter
Case - Collector
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
BDX14A
A
Prelim. 02/00
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
mA
V
V
--
V
V
MHz
-1
-5
-55
-60
-7
25
250
-1
-1.7
4
I
CEX
V
CEO(SUS)*
V
CER(SUS)*
V
(BR)EBO*
h
21E
*
V
CE(sat)*
V
BE*
f
T
Collector Emitter Cut Off Current
Collector Emitter Breakdown Voltage
Collector Emitter Breakdown Voltage
Emitter Base Breakdown Voltage
Static Forward Current Transfer Ratio
Collector Emitter Saturation Voltage
Base Emitter Voltage
Transition Frequency
V
CE
= -90V
V
BE
= +1.5V
V
CE
= -30V
V
BE
= +1.5V
T
case
= 150C
I
C
= -100mA
I
B
= 0
I
C
= -100mA
R
BE
= 100
W
I
E
= -1A
I
C
=0
V
CE
= - 4V
I
C
= - 0.5A
I
C
= - 0.5A
I
B
= - 0.05A
V
CE
= - 4V
I
C
= - 0.5A
V
CB
= -10V
I
C
= - 0.2A
f = 1MHz
ELECTRICAL CHARACTERISTICS
(Tcase = 25C unless otherwise stated)
* Pulse test t
p
= 300
m
s ,
d
< 2%
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